ROHM MMST918, MMPN918 Technical data

查询MMST918供应商

MMST918 / PN918

Transistors

NPN High Frequency Transistor

MMST918 / PN918

zFeatures

1) High current gain-bandwidth product f

T

=600MHz

zPackage, marking, and packaging specifications

Part No.

Packaging type

Marking

Code

Basic ordering unit

(pieces)

MMST918

SMT3

RVX
T146

3000

PN918
TO-92

−

T93

3000

zAbsolute maximum ratings (Ta = 25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power

dissipation
Junction temperature

Storage temperature

Parameter

MMST918
PN918

Symbol

CBO

V
V

CEO

V

EBO

I

C

C

P

Tj

Tstg

Limits

30
15

3

50

0.2

0.310
150

−55 to +150

Unit

zElectrical characteristics (Ta = 25°C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

Collector cutoff current

Parameter Symbol Min. Typ. Max. Unit Conditions

DC current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage

Transition frequency
Output capacitance
Emitter input capacitance

Noise figure
Power gain
Output power
Collector efficiency

BV

CBO

BVCEO
BVEBO

ICBO

FE 20 −− IC=3.0mA , VCE=1.0V

V

CE(sat)

VBE(sat) −

f

T

Cob

30
15

3.0

−

−

−−0.4 V IC/IB=10mA/1mA

600

−

−−3.0 pF

Cib −−2.0 pF
NF −−6.0 dB

Gpe 15 −−dB

Pout 30 −−mW

η 25 −−%

V
V
V

A
W
W

°C
°C

zExternal dimensions (Unit : mm)

MMST918

(1)

ROHM : SMT3
EIAJ : SC-59

PN918

ROHM : TO-92
EIAJ : SC-43

0.2

±

4.8

(12.7Min.)

(1)

−

−

−

−

−

−

−

−

−

−

−

0.01

1.0

1.0 V

−

1.7

C=1.0µA

V

I

C=3.0mA

I

V

I

E=10µA

V

V

CB=15V

µA

CB=15V , IE=0 , Ta=150

V

µA

−h

I

C/IB=10mA/1mA

MHzpFI

C=4.0mA , VCE=10V, f=100MHz

V

CB=10V , IE=0 , f=140kHz

V

CB=0 , IE=0 , f=140kHz

V

EB=0.5V , IC=0 , f=140kHz

C=1.0mA , VCE=6.0V ,RG=400Ω , f=60MHz

I
V

CB=12V , IC=6.0mA , f=200MHz

V

CB=15V , IC=8.0mA , f=500MHz

V

CB=15V , IC=8.0mA , f=500MHz

2.9±0.2

1.9±0.2

0.95

0.95
(2)

0.2

+

(3)

+

0.1

0.4

−0.05

All terminals have same dimensions

4.8±0.2

2.5Min.

0.5

±

(2) (3)

+0.3

2.5

−

0.1

5

+

0.2

1.1

−0.1

0.8±0.1

0 ∼ 0.1

0.2

0.1

±

−

2.8

1.6

+

0.1

0.15

−0.06

±

0.2

3.7

0.1

+0.15

0.45

2.3

−

0.05

°C

(1) Emitter
(2) Base
(3) Collector

0.3 ∼ 0.6

(1) Emitter
(2) Base
(3) Collector

1/2

Transistors

0

s

0

0

)

0

0

0

e

0

)

t

zElectrical characteristic curves

20

180µA

(mA)

10

COLLECTOR CURRENT : Ic

0

0

COLLECTOR-EMITTER VOLTAGE : V

160µA

140µA

120µA

100µA

80µA

60µA

40µA

20µA

IB=0µA

10

Fig.1 Typical output characteristic

1.8

(V)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

BASE EMITTER SATURATION VOLTAGE : VBE(sat)

0

0.1 0.2 0.5 1 2 5 10 20 50 10
COLLECTOR CURRENT : Ic

Fig.4 Base-emitter saturation voltag
vs. collector current

Ta=25°C

CE

Ta

=25°C

IC / I

B

=

(mA)

5000

(MHz

2000

Ta
V

=25°C

CE

=

5V

MMST918 / PN918

1000

500

FE

200

100

50

DC CURRENT GAIN : h

20

2

(V)

10

0.1 0.2 0.5

12 510205010

COLLECTOR CURRENT : Ic (mA)

Ta
V

=25°C

CE

=

10V

Fig.2 DC current gain vs.
collector current

(V

Ta=25°C
I

C

/ IB=10

CE(sat)

0.3

0.2

0.1

COLLECTOR EMITTER SATURATION VOLTAGE : V

0

0.1 0.2 0.5 1 2 5 10 20 50 10
COLLECTOR CURRENT : Ic (mA)

Fig.3 Collector-emitter saturation
voltage vs. collector current

1.8

(V)

10

1.6

BE(ON)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

BASE EMITTER VOLTAGE : V

0

0.1 0.2 0.5 1 2 5 10 20 50 10
COLLECTOR CURRENT : Ic (mA)

Ta
V

=25°C

CE

=

10V

Fig.5 Base-emitter 'ON' voltage
vs. collector current

10

5

2

(pF)

1

0.5

CAPACITANCE

0.2

0.1

0.1 0.2 0.5

Cib

12 510205010

REVERSE BIAS VOLTAGE : V (V)

Fig.6 Capacitance vs.
reverse bias voltage

Cob

Ta

=25°C

f=1MHz

1000

500

200

100

CURRENT GAIN BANDWIDTH PRODUCT

50

0.1 0.2 0.5 1 2 5 10 20 50 10
COLLECTOR CURRENT : Ic (mA)

Fig.7 Current gain bandwidth produc
vs. collector current

2/2