
查询MMST918供应商
MMST918 / PN918
Transistors
NPN High Frequency Transistor
MMST918 / PN918
zFeatures
1) High current gain-bandwidth product f
T
=600MHz
zPackage, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
MMST918
SMT3
RVX
T146
3000
PN918
TO-92
−
T93
3000
zAbsolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Parameter
MMST918
PN918
Symbol
CBO
V
V
CEO
V
EBO
I
C
C
P
Tj
Tstg
Limits
30
15
3
50
0.2
0.310
150
−55 to +150
Unit
zElectrical characteristics (Ta = 25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Parameter Symbol Min. Typ. Max. Unit Conditions
DC current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Emitter input capacitance
Noise figure
Power gain
Output power
Collector efficiency
BV
CBO
BVCEO
BVEBO
ICBO
FE 20 −− IC=3.0mA , VCE=1.0V
V
CE(sat)
VBE(sat) −
f
T
Cob
30
15
3.0
−
−
−−0.4 V IC/IB=10mA/1mA
600
−
−−3.0 pF
Cib −−2.0 pF
NF −−6.0 dB
Gpe 15 −−dB
Pout 30 −−mW
η 25 −−%
V
V
V
A
W
W
°C
°C
zExternal dimensions (Unit : mm)
MMST918
(1)
ROHM : SMT3
EIAJ : SC-59
PN918
ROHM : TO-92
EIAJ : SC-43
0.2
±
4.8
(12.7Min.)
(1)
−
−
−
−
−
−
−
−
−
−
−
0.01
1.0
1.0 V
−
1.7
C=1.0µA
V
I
C=3.0mA
I
V
I
E=10µA
V
V
CB=15V
µA
CB=15V , IE=0 , Ta=150
V
µA
−h
I
C/IB=10mA/1mA
MHzpFI
C=4.0mA , VCE=10V, f=100MHz
V
CB=10V , IE=0 , f=140kHz
V
CB=0 , IE=0 , f=140kHz
V
EB=0.5V , IC=0 , f=140kHz
C=1.0mA , VCE=6.0V ,RG=400Ω , f=60MHz
I
V
CB=12V , IC=6.0mA , f=200MHz
V
CB=15V , IC=8.0mA , f=500MHz
V
CB=15V , IC=8.0mA , f=500MHz
2.9±0.2
1.9±0.2
0.95
0.95
(2)
0.2
+
(3)
+
0.1
0.4
−0.05
All terminals have same dimensions
4.8±0.2
2.5Min.
0.5
±
(2) (3)
+0.3
2.5
−
0.1
5
+
0.2
1.1
−0.1
0.8±0.1
0 ∼ 0.1
0.2
0.1
±
−
2.8
1.6
+
0.1
0.15
−0.06
±
0.2
3.7
0.1
+0.15
0.45
2.3
−
0.05
°C
(1) Emitter
(2) Base
(3) Collector
0.3 ∼ 0.6
(1) Emitter
(2) Base
(3) Collector
1/2

Transistors
zElectrical characteristic curves
20
180µA
(mA)
10
COLLECTOR CURRENT : Ic
0
0
COLLECTOR-EMITTER VOLTAGE : V
160µA
140µA
120µA
100µA
80µA
60µA
40µA
20µA
IB=0µA
10
Fig.1 Typical output characteristic
1.8
(V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
BASE EMITTER SATURATION VOLTAGE : VBE(sat)
0
0.1 0.2 0.5 1 2 5 10 20 50 10
COLLECTOR CURRENT : Ic
Fig.4 Base-emitter saturation voltag
vs. collector current
Ta=25°C
CE
Ta
=25°C
IC / I
B
=
(mA)
5000
(MHz
2000
Ta
V
=25°C
CE
=
5V
MMST918 / PN918
1000
500
FE
200
100
50
DC CURRENT GAIN : h
20
2
(V)
10
0.1 0.2 0.5
12 510205010
COLLECTOR CURRENT : Ic (mA)
Ta
V
=25°C
CE
=
10V
Fig.2 DC current gain vs.
collector current
(V
Ta=25°C
I
C
/ IB=10
CE(sat)
0.3
0.2
0.1
COLLECTOR EMITTER SATURATION VOLTAGE : V
0
0.1 0.2 0.5 1 2 5 10 20 50 10
COLLECTOR CURRENT : Ic (mA)
Fig.3 Collector-emitter saturation
voltage vs. collector current
1.8
(V)
10
1.6
BE(ON)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
BASE EMITTER VOLTAGE : V
0
0.1 0.2 0.5 1 2 5 10 20 50 10
COLLECTOR CURRENT : Ic (mA)
Ta
V
=25°C
CE
=
10V
Fig.5 Base-emitter 'ON' voltage
vs. collector current
10
5
2
(pF)
1
0.5
CAPACITANCE
0.2
0.1
0.1 0.2 0.5
Cib
12 510205010
REVERSE BIAS VOLTAGE : V (V)
Fig.6 Capacitance vs.
reverse bias voltage
Cob
Ta
=25°C
f=1MHz
1000
500
200
100
CURRENT GAIN BANDWIDTH PRODUCT
50
0.1 0.2 0.5 1 2 5 10 20 50 10
COLLECTOR CURRENT : Ic (mA)
Fig.7 Current gain bandwidth produc
vs. collector current
2/2

Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1