ROHM MMST4401 Datasheet
UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
NPN Medium Power Transistor
(Switching)
UMT4401 / SST4401 / MMST4401 / 2N4401
External dimensions
Features
!
1) BV
CEO
>
40V (I
C
=1mA)
2) Complements the UMT4403 / SST4403 / MMST4403
/ PN4403.
Package, marking, and packaging specifications
!!!!
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
Absolute maximum ratings
!!!!
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
UMT4401
SST4401
MMST4401
2N4401
UMT4401
UMT3
R2X
T106
3000
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
Tj
Tstg
C
SST4401
MMST4401
SST3
R2X
T116
3000
(Ta=25°C)
Limits
60
40
0.6
0.2
0.625
150
-55~+150
2N4401
SMT3
T146
3000
6
R2X
TO-92
3000
Unit
V
V
V
A
T93
-
W
˚C
˚C
!!!!
UMT4401
ROHM : UMT3
EIAJ : SC-70
SST4401
ROHM : SST3
MMST4401
ROHM : SMT3
EIAJ : SC-59
2N4401
ROHM : TO-92
EIAJ : SC-43
0.2
±
4.8
(12.7Min.)
(Units : mm)
2.0±0.2
1.3±0.1
0.65 0.65
(2)(1)
0.1
±
1.25
(3)
+0.1
0.3
−0
All terminals have the same
dimensions
2.9
±
0.2
±
0.2
1.9
0.95
0.95
(2)
(1)
(3)
All terminals have the same
dimensions
+0.1
0.4
−
0.05
2.9
±
0.2
1.9
±
0.2
0.95
0.95
(2)
(1)
(3)
All terminals have the same
dimensions
+0.1
0.4
−
0.05
4.8±0.2
2.5Min.
±
0.5
(1)
(2) (3)
+0.3
2.5
−
5
0.1
±
2.1
0.1
−
+0.2
1.3
0.1
−
+0.2
1.6
0.1.
0.1
0.9±0.1
0.7±0.1
0.2
0~0.1
(1) Emitter
0.15±0.05
0.95
0.45
0.2
±
2.4
+0.1
0.15
−
0.06
1.1
0.8
0.2
±
2.8
+0.1
0.15
−
0.06
3.7
±
0.1
0.45
(2) Base
(3) Collector
0.1~0.4
+0.2
−
0.1
±
0.1
0~0.1
0.2Min.
(1) Emitter
(2) Base
(3) Collector
+0.2
−
0.1
±
0.1
0~0.1
(1) Emitter
0.6
~
(2) Base
0.3
(3) Collector
±
0.2
(1) Emitter
(2) Base
(3) Collector
2.3
Electrical characteristics
!!!!
(Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
-
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
BV
BV
BV
I
CBO
I
EBO
CE(sat)
BE(sat)
DC current transfer ratio h
Transition frequency
Collector output capacitance
Emitter input capacitance Cib - - 30 pF
Delay time td - - 15 ns
Rise time tr - - 20 ns
Storage time tstg - - 225 ns
Fall time tf - - 30 ns
Cob
f
60
40
CEO
EBO
FE
T
6
-
-
- - 0.4
- - 0.75 I
- - 0.95
- - 1.2
20 - - V
40 - 80 - - -
100 - 300
40 - -
250--
-
-
-
-
--6.5
-
-
-
0.1
0.1
V
V
V
µA
µA
V
V
MHzpFV
I
C
=
100µA
I
C
=
1mA
I
E
=
100µA
V
CB
=
35V
V
EB
=
5V
IC/I
B
=
150mA/15mA
C/IB
=
500mA/50mA
C/IB
=
150mA/15mA
I
C/IB
=
500mA/50mA
I
CE
=
1V, I
V
CE
=
1V, I
V
CE
=
1V, I
V
CE
=
1V, I
V
CE
=
2V, I
CE
=
10V, I
CB
=
10V, f=100kHz
V
V
EB
=
0.5V, f=100kHz
V
CC
=
30V, V
V
CC
=
30V, V
V
CC
=
30V, I
V
CC
=
30V, I
C
=
0.1mA
C
=
1mA
C
=
10mA
C
=
150mA
C
=
500mA
E
=-
20mA, f=100MHz
EB(OFF)
=
2V, I
EB(OFF)
=
2V, I
C
=
150mA, I
C
=
150mA, I
C
C
B1
B1
=
150mA, I
=
150mA, I
=-
I
B2
=-
I
B2
=
15mA
=
15mA
B1
=
15mA
B1
=
15mA
Transistors
Electrical characteristic curves
!!!!
100
Ta=25°C
50
COLLECTOR CURRENT : Ic(mA)
0
COLLECTOR-EMITTER VOLTAGE : V
Fig.1 Grounded emitter output
characteristics
600
500
400
300
200
100
IB=0µA
5
CE
(V)
100
UMT4401 / SST4401 / MMST4401 / 2N4401
1000
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.3 DC current gain vs. collector current(Ι)
Ta
=25°C
V
CE
=
10V
1V
(V)
CE(sat)
0.3
0.2
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Ta=25°C
C / IB=10
I
1000
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
Fig.2 Collector-emitter saturation
voltage vs. collector current
1000
FE
100
AC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.5 AC current gain vs. collector current
Ta
=125°C
25
°C
−55
°C
COLLECTOR CURRENT : Ic(mA)
Fig.4 DC current gain vs. collector current(ΙΙ)
(V)
1.8
Ta
V
=
f
=25°C
CE
=
1kHz
10V
BE(sat)
1.6
1.2
0.8
0.4
BASE EMITTER SATURATION VOLTAGE : V
0
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
V
CE
Ta=25°C
IC / I
B
=10
=
10V
Loading...