UMT3906/SST3906/MMST3906
Transistors
PNP General Purpose Transistor
UMT3906 / SST3906 / MMST3906
zFeatures
>
1) BV
−40V (IC= −1mA)
CEO
2) Complements the T3904/SST3904/MMST3909.
3) Low capacitance.
zPackage, marking, and p ackaging specifications
Basic ordering unit (pieces)
Type UMT3906
Packaging type
Marking
Code
UMT3
R2A
T106
3000
SST3906
SST3
R2A
T116
3000
MMST3906
SMT3
R2A
T146
3000
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power
dissipation
Junction temperature
Storage temperature
When mounted on a 7 5 0.6mm ceramic board.
∗
Parameter
UMT3906
SST3906,MMST3906
SST3906,MMST3906
+
+
Symbol
CBO
V
V
CEO
V
EBO
O
I
Pd
Tj
Tstg
−55
Limits
−40
−40
−5
−0.2
6.2
0.35
150
to
+150
zElectrical characteristics (T a=25°C)
Collector-base breakdown voltage
Parameter
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage tiem
Fall time
Symbol
BV
CBO
BV
CEO
BV
EBO
CES
I
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Cib
td
tr
tstg
tf
Min. Max.Typ.
−40
−40
−5
−
−
−
−
−0.65
−
60
80
100 300
60
30
250
−
−
−
−
−
−
Unit
V
V
V
A
W
W
°C
°C
−
−
−
−
−
−50
−
−50
−
−
−0.25
−
−0.4
−0.85
−
−
−0.95
−
−
−
−
−−
−
−
−
−
−
−
4.5
−
10
−
35
−
35
−
225
−
75
−
zDimensions (Unit : mm)
UMT3906
ROHM : UMT3
EIAJ : SC-70
SST3906
ROHM : SST3
MMST3906
ROHM : SMT3
EIAJ : SC-59
∗
Unit Conditions
V
C
V
V
nA
nA
V
V
MHz
pF
pF
ns
ns
ns
ns
= −10µA
I
C
= −1mA
I
E
= −10µA
I
CB
= −30V
V
EB
= −3V
V
C/IB
= −10mA/ −1mA
I
I
C/IB
= −50mA/ −5mA
I
C/IB
= −10mA/ −1mA
I
C/IB
= −50mA/ −5mA
V
CE
= −1V, IC= −0.1mA
CE
= −1V, IC= −1mA
V
CE
= −1V, IC= −10mA
V
V
CE
= −1V, IC= −50mA
CE
= −1V, IC= −100mA
V
CE
= −20V, IE=10mA, f=100MHz
V
V
CB
= −10V, f=100kHz, IE=0A
V
CB
= −0.5V, f=100kHz, IC=0A
CC
= −3V, V
V
CC
= −3V, V
V
V
CC
= −3V, IC= −10mA, IB1= −IB2= −1mA
CC
= −3V, IC= −10mA, IB1= −IB2= −1mA
V
−
BE(OFF)
= −0.5V,IC= −10mA, IB1= −1mA
BE(OFF)
= −0.5V,IC= −10mA, IB1= −1mA
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
Rev.B 1/4
Transistors
zElectrical characteristics curves
10
Ta=25
°C
50
45
IB=0µA
10
40
35
30
25
20
15
10
5
V)
mA)
8
6
4
2
-COLLECTOR CURRENT (
C
I
0
VCE-COLLECTOR-EMITTER VOLTAGE (
Fig.1 Grounded emitter output
characteristics
500
200
UMT3906/SST3906/MMST3906
V)
0.3
0.2
0.1
0
VCE(sat)COLLECTOR EMITTER SATURATION VOLTAGE (
0.1 1.0 10 100
IC EMITTER COLLECTOR CURRENT (
Fig.2 Collector-emitter saturation
voltage vs. collector current
Ta=25
I
C / IB
=10
Ta=25
°C
mA)
°C
100
-DC CURRENT GAIN
FE
h
10
5
0.1 101.0 100 1000
IC-COLLECTOR CURRENT (
mA)
VCE=5V
3V
1V
Fig.3 DC current gain vs.collector current ( Ι )
500
Ta=125
°C
Ta=25
100
-DC CURRENT GAIN
FE
h
10
5
0.1 101.0 100 1000
°C
Ta= −55
°C
IC-COLLECTOR CURRENT (
mA)
VCE=5V
Fig.4 DC current gain vs. collector current ( ΙΙ )
Rev.B 2/4
Transistors
500
100
-AC CURRENT GAIN
FE
h
10
5
0.01 1.00.1 10 100
IC-COLLECTOR CURRENT (
mA)
UMT3906/SST3906/MMST3906
Ta=25
VCE=5V
f=1kHz
°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
BASE EMITTER SATURATION VOLTAGE (V)
0
BE(SAT)
V
0.1 1.0 10 100
IC-COLLECTOR CURRENT (
IC / IB=10
Ta=25
mA)
°C
Fig.5 AC current gain vs. collector current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-BASE EMITTER ON VOLTAGE (V)
0.2
BE(ON)
V
0
0.1 1.0 10 100
IC-COLLECTOR CURRENT (
Fig.7
Grounded emitter propagation
characteristics
1000
IC=101B1=101
Ta=25
VCE=5V
Ta=25
mA)
°C
Fig.6 Base-emitter saturation
voltage vs. collector current
°C
1000
ns)
100
VCC=3V
10
-TURN ON TIME (
on
t
1
1.0
IC-COLLECTOR CURRENT (
15V
10 100
40V
Ta=25
IC / IB=10
mA)
Fig.8 Turn-on time vs. collector
current
B2
1000
IC=101B1=101
Ta=25
°C
1000
°C
100
ns)
10
-RISE TIME (
r
t
1
1.0
IC-COLLECTOR CURRENT (
10 100
Ta=25
IC / =IB=10
mA)
°C
Fig.9 Rise time vs. collector
current
B2
50
f=1MHz
Ta=25
°C
ns)
100
-STORAGE TIME (
S
t
40V
15V
VCC=3V
10
1.0
IC-COLLECTOR CURRENT (
10 100
Fig.10 Storage time vs. collector
current
mA)
ns)
100
tf-FALL TIME (
10
1.0
IC-COLLECTOR CURRENT (mA)
10 100
Fig.11 Fall time vs. collector
current
pF)
10
CAPACITANCE (
1
0.5
0.1
Cib
Cob
1 10 100
REVERSE BIAS VOLTAGE (
V)
Fig.12 Input / output capacitance
vs. voltage
Rev.B 3/4
Transistors
100
V)
1.0
COLLECTOR-EMITTER VOLTAGE (
CE
V
0.1
200MHz
100MHz
300MHz
10
0.1
1 10 100
IC-COLLECTOR CURRENT (
400MHz
300MHz
200MHz
mA)
Ta=25
100MHz
°C
1000
MHz)
100
-CORRENT GAIN-BANDWIDTH PRODUCT (
T
f
10
1
IC-COLLECTOR CURRENT (
UMT3906/SST3906/MMST3906
100
VCE=5V
Ta=25
°C
10 100
mA)
IC=1mA
hie=4.08k Ω
hfe=146
hre=2.20 10
hoe=34.3µS
10
1
h-PARAMETER NORMALIZED TO 1mA
0.1
0.1
−4
+
hie
1 10 100
IC-COLLECTOR CURRENT (
hoe
hfe
hre
mA)
VCE=5V
f=270Hz
Ta=25
°C
Fig.13 Gain bandwidth product
Fig.14 Gain bandwidth product
vs. collector current
12
10
dB)
8
6
4
NF-NOISE FIGURE (
2
0
10 1k100 10k 100k
f-FREQUENCY (
Hz)
Fig.16 Noise vs. collector current
100k
8dB
5dB
10k
1k
-SOURCE RESISTANCE (Ω)
S
R
100
0.01
NF=1dB
3dB
5dB
8dB
12dB
IC-COLLECTOR CURRENT (
0.1 1 10
3dB
NF=1dB
Ta=25
VCE=5V
f=10kHz
mA)
Fig.18 Noise characteristics ( ΙΙ )
12dB
°C
100k
10k
-SOURCE RESISTANCE (Ω)
S
R
100
1k
0.01
NF=1dB
3dB
5dB
8dB
0.1 1 10
IC-COLLECTOR CURRENT (
Fig.19 Noise characteristics (ΙΙΙ)
Ta=25
VCE=5V
C
=100µA
I
R
S
=10kΩ
NF=1dB
°C
8dB
5dB
3dB
mA)
Ta=25
VCE=5V
f=30Hz
12dB
Fig.15 h parameter vs. collector current
10µ
VCB=25V
1µ
100n
10n
1n
-COLLECTOR CUTOFF CURRENT (A)
CBO
I
0.1n
0
TA-AMBIENT TEMPERATURE (
Fig.17 Noise characteristics ( Ι )
°C
100k
10k
1k
NF=3dB
-SOURCE RESISTANCE (Ω)
S
R
5dB
8dB
100
0.01
IC-COLLECTOR CURRENT (
Fig.20 Noise characteristics ( )
7525 50 100 125 150
8dB
5dB
3dB
0.1 1 10
NF=12dB
°C)
Ta=25
VCE=5V
f=10Hz
mA)
°C
ΙΛ
Rev.B 4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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