UMT2907A / SST2907A / MMST2907A
Transistors
PNP Medium Power Transistor
(Switching)
UMT2907A / SST2907A / MMST2907A
zFeatu res
1) BVCEO< -60V (IC=-10mA)
2) Complements the UMT2222A / SST2222A /
MMST2222A.
zPackage, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT2907A
UMT3
R2F
T106
3000
SST2907A
SST3
R2F
T116
3000
MMST2907A
SMT3
R2F
T146
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
Mounted on a 7 x 5 x 0.6mm ceramic substrate.
UMT2907A,
SST2907A,
MMST2907A
SST2907A
V
V
V
Tstg
Limits
CBO
CEO
EBO
I
C
P
C
Tj
−60
−60
−5
−0.6
0.2 W
0.35
150
−55 to +150
Unit
V
V
V
A
W
°C
°C
zElectrical characteristics (T a=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
CE(sat)
V
V
BE(sat)
FE
h
T
f
Cob
Cib − 30 pF
ton − 50 ns
td − 10 ns
tr − 40 ns
toff − 100 ns
tstg − 80 ns
tf
−
−60
−
−60
−
−5
−
−
−
−
−
−
−
−
75
100
100
100
50
200
−
−
−
−
−
−
−
−−30 ns
−100
−−100 VCB= −30V
−
−100
−−0.4
−−1.6 I
−−1.3
−−2.6
−− V
−−
−−−
− 300
−− V
−−−
∗
−
−
−
8
zDimensions (Unit : mm)
UMT2907A
ROHM : UMT3
EIAJ : SC-70
SST2907A
ROHM : SST3
MMST2907A
ROHM : SMT3
EIAJ : SC-59
I
V
C
= −10µA
V
I
C
= −10mA
E
= −10µA
V
I
CB
= −50V
V
nA
nA
EB
= −3V
V
IC/IB= −150mA/ −15mA
V
C/IB
= −500mA/ −50mA
I
C/IB
= −150mA/ −15mA
V
I
C/IB
= −500mA/ −50mA
CE
= −10V, IC= −0.1mA
CE
= −10V, IC= −1mA
V
CE
= −10V, IC= −10mA
V
CE
= −10V, IC= −150mA
V
CE
= −10V, IC= −500mA
MHzpFV
CE
= −20V, IE=50mA, f=100MHz
CB
= −10V, f=100kHz
V
EB
= −2V, f=100kHz
V
CC
= −30V, V
V
CC
V
CC
V
CC
V
CC
V
CC
V
BE(OFF)
= −30V, V
BE(OFF)
= −30V, V
BE(OFF)
= −30V, IC= −150mA, IB1=IB2= −15mA
= −30V , IC= −150mA, IB1=IB2= −15mA
= −30V, IC= −150mA, IB1=IB2= −15mA
= −1.5V, IC= −150mA, IB1= −15mA
= −1.5V, IC= −150mA, IB1= −15mA
= −1.5V, IC=− 150mA, IB1= −15mA
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
Rev.B 1/4
UMT2907A / SST2907A / MMST2907A
Transistors
zElectrical characteristic curves
100
Ta=25˚C
(mA)
C
50
COLLECTOR CURRENT : I
0
COLLECTOR-EMITTER VOLTAGE : V
Fig.1 Grounded emitter output
1B=0µA
characteristics
1000
FE
5
600
500
400
300
200
100
100
CE
(V)
1.8
(V)
1.6
BE (sat)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0 10 100 1000
BASE-EMITTER SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (mA)
Ta=25˚C
C
I
Fig.2 Base-emitter saturation
voltage vs. collector current
Ta=25˚C
VCE=10V
/ IB=10
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : IC (mA)
1V
Fig.3 DC current gain vs. collector current ( I )
1000
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
Ta=125˚C
Ta=25˚C
Ta=−55˚C
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( II )
VCE=10V
Rev.B 2/4
UMT2907A / SST2907A / MMST2907A
Transistors
1000
FE
100
Ta=25˚C
V
f=1kHz
CE
=10V
0.3
(V)
CE (sat)
0.2
Ta=25˚C
C / IB
=10
I
AC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 AC current gain vs. collector current
1.8
(V)
1.6
BE(on)
1.4
1.2
1.0
0.8
0.6
0.4
EMITTER ON VOLTAGE : V
-
0.2
BASE
0
1.0 10 100 1000
COLLECTOR CURRENT : IC (
Ta=25˚C
V
CE
=10V
mA)
Fig.7 Grounded emitter propagation
characteristics
1000
(MHz)
T
100
BANDWIDTH PRODUCT : f
-
CURRENT GAIN
10
1
10 100 1000
COLLECTOR CURRENT : IC (
Fig.8 Gain bandwidth product
vs. collector current
100
pF)
Ta=25˚C
f=1MHz
Cib
C
10
ob
1000
(ns)
100
VCC=30V
Ta=25˚C
CE
=10V
V
mA)
Ta=25˚C
C / IB
=10
I
0.1
COLLECTOR-EMITTER
SATURATION VOLTAGE : V
0
1.0 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
100
(V)
CE
100MHz
200MHz
10
1
COLLECTOR-EMITTER VOLTAGE : V
0.1
1
COLLECTOR CURRENT : IC (
300MHz
250MHz
10 100 1000
Fig.9 Gain bandwidth product
500
100
(ns)
Ta=25˚C
200MHz
mA)
Ta=25˚C
V
CC
C
I
=30V
/ IB=10
CAPACITANCE (
1
0.1
1 10 100
REVERSE BIAS VOLTAGE (
Fig.10 Input/output capacitance
vs. voltage
10V
TURN ON TIME : ton
10
V)
1
10 100 1000
COLLECTOR CURRENT : IC (
mA)
Fig.11 Turn-on time vs.collector
current
RISE TIME : tr
10
5
1
10 100 1000
COLLECTOR CURRENT : IC (
Fig.12 Rise time vs. collector
current
mA)
Rev.B 3/4
UMT2907A / SST2907A / MMST2907A
Transistors
1000
(ns)
100
Ta=25˚C
V
CC
=30V
C
=10IB1=10I
I
1000
B2
(ns)
100
Ta=25˚C
V
CC
=30V
C
=10IB1=10I
I
B2
STORAGE TIME : ts
10
1
10 100 1000
COLLECTOR CURRENT : IC (
Fig.13 Storage time vs. collector
current
mA)
FALL TIME : tf
10
1
10 100 1000
COLLECTOR CURRENT : IC (
mA)
Fig.14 Fall time vs. collector
current
Rev.B 4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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