ROHM MMBTA70 Technical data
SMD Type
SMD Type
General Purpose Transistor
MMBTA70
Transistors
IC
Features
General Purpose Transistor
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total Device Dissipation FR-5 Board
(* 1) @T
A =25
Derate above 25
Thermal Resistance, Junction-to-Ambient RèJA 556
Total Device Dissipation Alumina
Substrate, (* 2)
@T
A =25
Derate above 25
Thermal Resistance, Junction-to-Ambient RèJA 417
Junction temperature T
Storage temperature Tstg -55to+150
* 1. FR-5 = 1.0 × 0.75 ×0.062 in.
* 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
CEO -40 V
EBO -4 V
C -100 mA
PD 225
1.8
PD
300
2.4
j 150
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
+0.1
-0.1
2.4
12
+0.1
0.95
-0.1
+0.1
1.9
-0.1
mW
mW/
/W
mW
mW/
/W
0-0.1
Unit: mm
0.4
+0.1
-0.1
1.3
0.55
+0.05
0.1
-0.01
+0.1
-0.1
0.97
1.Base
2.Emitter
+0.1
-0.1
3.collector
0.38
Electrical Characteristics Ta = 25
Parameter Symbol Testconditons Min Typ Max Unit
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
(BR)CEO IC =-1.0mA,IB =0 -40 V
(BR)EBO IE = -100 ìA, IC =0 -4.0 V
Collector cutoff current I
DC current gain H
Collector-emitter saturation voltage V
CE(sat) IC =-10mA,IB = -1.0 mA -0.25 V
Current-gain-bandwidth product f
Output capacitance C
Marking
Marking M2C
CBO VCB =-30V,IE = 0 -100 nA
FE IC =-5.0mA,VCE = -10 V 40 400
T IC =-5.0mA,VCE = -10 V, f = 100 MHz 125 MHz
obo VCB =-10V,IE = 0, f = 1.0 MHz 4.0 pF
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