Transistors
General purpose transistor
(isolated dual transistors)
IMX9
z
zExternal dimensions (Units : mm)
zzzz
Features
1) Two 2SD2114K chips in a SMT packa ge.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mount ing co st and are a can be cut in hal f.
zzzz
Structure
Epitaxial planar ty pe
NPN silicon transistor
zz
2.9±0.2
1.9±0.2
0.95 0.95
(4)
(3)
0.3
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
(5)
(2)
+0.1
−0.05
(6)
(1)
+0.2
1.1
−0.1
0.8±0.1
−0.1
+0.2
1.6
2.8±0.2
+0.1
0.15
−0.06
Abbreviated symbol: X9
IMX9
0~0.1
0.3~0.6
The following characteristics apply to both Tr
z
zAbsolute maximum ratings (T a = 25°C) zzzzEquivalent circuit
zz
and Tr2.
1
Parameter Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
200mW per element must not be exceeded.
∗
z
zElectrical characteristics (T a = 25°C)
zz
CBO
V
V
CEO
V
EBO
I
C
Pd 300(TOTAL) mW
Tj 150
Tstg
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
T
f
Cob
Ron
25 V
20 V
12 V
500 mA
∗
°C
−55~+150 °C
Typ. Max. Unit Conditions
Min.
25
20
12
−
−
−
560
−
−
−
−
−
−
−
−
0.18
−
350
8
0.8
0.5
0.5
0.4
2700
V
−
−
−
−
−
−
V
V
µA
µA
V
−
MHz
pF
Ω
I
C
=10µA
C
=1mA
I
E
=10µA
I
V
CB
=20V
EB
=10V
V
I
C/IB
=500mA/20mA
CE
=3V, IC=10mA
V
V
CE
=10V, IE=−50mA, f=100MHz
V
CB
=10V, IE=0A, f=1MHz
B
=1mA, Vi=100mVrms, f=1kHz
I
(4) (5) (6)
Tr
2
(3) (2) (1)
Tr
1
Transistors
z
zPackaging s pecif icat ions
zz
Packaging type
Code
Part No.
IMX9
z
zElectrical characteristic curves
zz
2.0
(mA)
1.6
C
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter output
Basic ordering unit (pieces)
Ta=25°C
2.0µA
1.8µA
characteristics(Ι)
1.6µA
1.4µA
1.2µA
1.0µA
0.8µA
0.6µA
0.4µA
0.2µA
B
I
=0
IMX9
Taping
T110
3000
1000
1.8mA 2.0mA
1.6mA
1.4mA
(mA)
800
C
600
400
200
COLLECTOR CURRENT : I
0
0246810
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
B
=0mA
I
1.2mA
Ta=25°C
Measured using
pulse current.
CE
Fig.2 Grounded emitter output
characteristics (ΙΙ)
1000
500
Ta=100°C
(mA)
200
C
100
50
20
10
COLLECTOR CURRENT : I
(V)
25°C
−25°C
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter propagation
characteristics
VCE=
3V
Measured using
pulse current.
BE
(V)
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
Ta=25°C
Measured using
pulse current.
1V
Fig.4 DC current gain vs. collector
current (Ι)
V
CE
3V
C
(mA)
=5V
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
1 2 5 10 20 50 100 200 500 1000
VCE=
3V
Measured using
pulse current.
Ta=100°C
25°C
−25°C
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current (ΙΙ)
2000
(mV)
1000
CE(sat)
500
200
100
50
IC/I
B
=
100
50
20
25
10
10
5
2
1
2 5 10 20 50 100 200 500 1000
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)
Ta=25°C
Measured using
pulse current.
C
(mA)
Transistors
IMX9
2000
(mV)
1000
CE(sat)
500
200
100
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
50
20
10
5
2
1
25°C
−25°C
2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
I
C
/
I
B
=
25
Measured using
pulse current.
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
10000
5000
(MHz)
T
2000
1000
500
200
100
50
20
TRANSITION FREQUENCY : f
10
−1 −2 −5 −10 −20 −50−100−200 −500−1000
EMITTER CURRENT : I
Ta=25°C
V
CE
=10V
Measured using
pulse current.
E
(mA)
Fig.10 Gain bandwidth product vs.
emitter current
10000
(mV)
5000
BE(sat)
2000
1000
500
200
100
50
20
10
BASE SATURATION VOLTAGE : V
IC/IB=10
25
50
100
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : I
Fig.8 Base-emitter saturation
voltage vs. collector current (Ι)
1000
(pF)
500
200
100
50
20
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : Cob
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : V
Fig.11 Collector output capacitance
vs. collector-base voltage
Ta=25°C
Pulsed
C
(mA)
Ta=25°C
f=1MHz
I
E
=0A
10000
(mV)
5000
BE(sat)
BASE SATURATION VOLTAGE : V
Ta=−25°C
2000
1000
500
200
100
50
20
10
25°C
100°C
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
Fig.9 Base-emitter saturation voltage
CB
(V)
vs. collector current (ΙΙ)
100
50
20
10
5
2
1
0.5
ON RESISTANCE : Ron (Ω)
0.2
0.1
0.01 0.020.05 0.1 0.2 0.5 1 2 5 10
BASE CURRENT : I
Fig.12 Output-on resistance vs.
base current
C/lB
=10
l
Measured using
pulse current.
C
(mA)
Ta=25°C
f=1kHz
rms)
Vi=100mV(
RL=1kΩ
B
(mA)
zzzz
Ron measurement circuit
RL=1kΩ
Input
Vi
1kHz
100mV(rms)
Ron= ×R
Vi-V
I
B
V
0
L
0
V
Output
V
0
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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