ROHM IMX9 Technical data
Transistors
General purpose transistor
(isolated dual transistors)
IMX9
z
zExternal dimensions (Units : mm)
zzzz
Features
1) Two 2SD2114K chips in a SMT packa ge.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mount ing co st and are a can be cut in hal f.
zzzz
Structure
Epitaxial planar ty pe
NPN silicon transistor
zz
2.9±0.2
1.9±0.2
0.95 0.95
(4)
(3)
0.3
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
(5)
(2)
+0.1
−0.05
(6)
(1)
+0.2
1.1
−0.1
0.8±0.1
−0.1
+0.2
1.6
2.8±0.2
+0.1
0.15
−0.06
Abbreviated symbol: X9
IMX9
0~0.1
0.3~0.6
The following characteristics apply to both Tr
z
zAbsolute maximum ratings (T a = 25°C) zzzzEquivalent circuit
zz
and Tr2.
1
Parameter Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
200mW per element must not be exceeded.
∗
z
zElectrical characteristics (T a = 25°C)
zz
CBO
V
V
CEO
V
EBO
I
C
Pd 300(TOTAL) mW
Tj 150
Tstg
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
T
f
Cob
Ron
25 V
20 V
12 V
500 mA
∗
°C
−55~+150 °C
Typ. Max. Unit Conditions
Min.
25
20
12
−
−
−
560
−
−
−
−
−
−
−
−
0.18
−
350
8
0.8
0.5
0.5
0.4
2700
V
−
−
−
−
−
−
V
V
µA
µA
V
−
MHz
pF
Ω
I
C
=10µA
C
=1mA
I
E
=10µA
I
V
CB
=20V
EB
=10V
V
I
C/IB
=500mA/20mA
CE
=3V, IC=10mA
V
V
CE
=10V, IE=−50mA, f=100MHz
V
CB
=10V, IE=0A, f=1MHz
B
=1mA, Vi=100mVrms, f=1kHz
I
(4) (5) (6)
Tr
2
(3) (2) (1)
Tr
1
Transistors
z
zPackaging s pecif icat ions
zz
Packaging type
Code
Part No.
IMX9
z
zElectrical characteristic curves
zz
2.0
(mA)
1.6
C
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter output
Basic ordering unit (pieces)
Ta=25°C
2.0µA
1.8µA
characteristics(Ι)
1.6µA
1.4µA
1.2µA
1.0µA
0.8µA
0.6µA
0.4µA
0.2µA
B
I
=0
IMX9
Taping
T110
3000
1000
1.8mA 2.0mA
1.6mA
1.4mA
(mA)
800
C
600
400
200
COLLECTOR CURRENT : I
0
0246810
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
B
=0mA
I
1.2mA
Ta=25°C
Measured using
pulse current.
CE
Fig.2 Grounded emitter output
characteristics (ΙΙ)
1000
500
Ta=100°C
(mA)
200
C
100
50
20
10
COLLECTOR CURRENT : I
(V)
25°C
−25°C
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter propagation
characteristics
VCE=
3V
Measured using
pulse current.
BE
(V)
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
Ta=25°C
Measured using
pulse current.
1V
Fig.4 DC current gain vs. collector
current (Ι)
V
CE
3V
C
(mA)
=5V
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
1 2 5 10 20 50 100 200 500 1000
VCE=
3V
Measured using
pulse current.
Ta=100°C
25°C
−25°C
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current (ΙΙ)
2000
(mV)
1000
CE(sat)
500
200
100
50
IC/I
B
=
100
50
20
25
10
10
5
2
1
2 5 10 20 50 100 200 500 1000
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)
Ta=25°C
Measured using
pulse current.
C
(mA)
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