ROHM IMP11, IMN11, IMN10 Datasheet

FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /

Diodes

UMN1N / UMP1N / UMN11N / UMP11N

Switching diode

FMN1 / FMP1 / IMN10 / IMN11 / IMP11
UMN1N / UMP1N / UMN11N / UMP11N

Applications

!

Ultra high speed switching

Features

!

1) A wide variety of configurations are available.
(UMD5, UMD6, SMD5, SMD6)

2) Multiple diodes in one small surface mount package.

3) Diode characteristics are matched in the package.

Construction

!

Silicon epitaxial planar

Circuit

!!!!

External dimensions

!!!!

FMN1 / FMP1 UMN1N / UMP1N

2.9±0.2

1.9±0.2

0.95

0.95

∗

−0.1

+0.2

2.8±0.2

1.6

+0.1

0.3

−0.05

(All leads have the same dimensions.)

ROHM : SMD5
EIAJ : SC-74A
JEDEC : −

IMN10 / IMN11 / IMP11 UMN11N / UMP11N

2.9±0.2

1.9±0.2

0.95

0.95

∗

−0.1

+0.2

2.8±0.2

1.6

+0.1

0.3

−0.05

(All leads have the same dimensions.)

ROHM : SMD6
EIAJ : SC-74
JEDEC : SOT-457

1.1

0.8±0.1

+0.1

0.15

−0.06

∗Marking

FMN1 : N1
FMP1 : P1

1.1

0.8±0.1

+0.1

0.15

−0.06

∗Marking

IMN10 : N10
IMN11 : N11
IMP11 : P11

(Units : mm)

+0.2

−0.1

0∼0.1

0.3∼0.6

+0.2

−0.1

0∼0.1

0.3∼0.6

(All leads have the same dimensions.)

ROHM : UMD5
EIAJ : SC-88A
JEDEC : SOT-353

(All leads have the same dimensions.)

ROHM : UMD6
EIAJ : SC-88
JEDEC : SOT-363

2.0±0.2

1.3±0.1

0.65 0.65

∗

0.2

2.0±0.2

1.3±0.1

0.65 0.65

∗

0.2

+0.1

−0.05

+0.1

−0.05

0.1

±

1.25

2.1±0.1

0.15±0.05

∗Marking
UMN1N : N1
UMP1N : P1

0.1

±

1.25

2.1±0.1

0.15±0.05

∗Marking
UMN11N : N11
UMP11N : P11

0.9±0.1

0.7

0.9±0.1

0.7

0∼0.1

0.1Min.

0∼0.1

0.1Min.

FMN1 FMP1 IMN10

IMN11 IMP11

SMD5 / SMD6 Package

UMN1N UMP1N UMN11N UMP11N

UMD5 / UMD6 Package

FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /

Diodes

Absolute maximum ratings

!!!!

FMN1
UMN1N

FMP1
UMP1N

IMN10 80 80 300 100 4 150 −55∼+150
IMN11

UMN11N
IMP11

UMP11N

∗1 Not to exceed 200mW per element.
∗2 Not to exceed 120mW per element.

Electrical characteristics

!!!!

FMN1
UMN1N

FMP1
UMP1N

IMN10 1.2 100 0.1 70 3.5 6 1 4 6 5
IMN11

UMN11N
IMP11

UMP11N

UMN1N / UMP1N / UMN11N / UMP11N

(Ta=25°C)

(

A)

Power

dissipation

(TOTAL)

Pd (mW)
150/80

150/80

∗

300

∗

150

∗

150

temperature

1

2

2

Junction

Tj

(˚C)

Storage

temperature

Tstg

(˚C)

−55∼+150

Type

mA)

Surge

current

(1µs)

Isurge

Peak
reverse
voltage

RM

(

V

DC
reverse
voltage

V

R

V)

(

Peak

forward

current

FM

(

I

V)

mA)

Mean

rectifying

current

I

O

(

80 80 80 25 0.25 150

80 80 80 25 0.25 150 −55∼+150

80 80 300 100 4 150 −55∼+150

80 80 300 100 4 150 −55∼+150

(Ta=25°C)

Forward voltage Reverse recovery timeReverse current

Type Cond.

V

Max.

Cond. Cond.

F

(

V)

F

I

(

mA)

I

R

(µ

A)

0.9 5 0.1 70 3.5 6 1 4 6 5

0.9 5 0.1 70 3.5 6 1 4 6 5

1.2 100 0.1 70 3.5 6 1 4 6 5

1.2 100 0.1 70 3.5 6 1 4 6 5

Capacitance between terminals

Cond.

V

R

(

T

(

pF)

C

Max.Max.

V)

t

rr

(ns)

V

f (MHz)

R

(

V)

Max.

V

R

(

V) I

F

(

mA)

Electrical characteristic curves

!!!!

125

(%)

100

dMax.

/ P

d

75

50

25

POWER DISSIPATION : P

0

25 50 75 100 125 150

0

AMBIENT TEMPERATURE : Ta (˚C)

Fig.1 Power reduction curve

(Ta=25°C)

(mA)

F

FORWARD CURRENT : I

50

20
10

5

2
1

0.5

0.2

0.1
0

˚C

˚C

85˚C

50

0

−30˚C

0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE : V

Fig. 2 Forward current vs.

forward voltage
(P Type)

Ta=25˚C

1 000

100

(nA)

R

10

1.0

0.1

REVERSE CURRENT : I

0.01
0

F

(V)

10 20 30 40 50

REVERSE VOLTAGE : V

Ta=100˚C

−25˚C

R

(V)

75˚C

50˚C
25˚C

0˚C

Fig.3 Reverse current vs.

reverse voltage
(P Type)