ROHM EMH3, UMH3N, IMH3A Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

EMH3 / UMH3N / IMH3A

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

1) Built-In Biasing Resistors.

2) Two DTC143T chips in one package.

3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

4) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

l

Inner circuit

of the input. They also have the advantage of
completely eliminating parasitic effects.

5) Only the on/off conditions need to be set for
operation, making the circuit design easy.

6) Lead Free/RoHS Compliant.

l

Application

Inverter circuit, Interface circuit, Driver circuit

l

Packaging specifications

3,000

H3

UMH3N

UMT6

2021

TR

180

8

SMT6

2928

T108

180

8

8,000H38

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

EMH3

EMT6

1616

T2R

180

3,000

H3

IMH3A

Part No.

Package

Package

size

(mm)

Taping

code

R

1

4.7kW

Parameter

Tr1 and Tr2

V

CEO

50V

I

C(MAX.)

100mA

EMT6

UMT6

SMT6

EMH3

(SC-107C)

IMH3A

SOT-457 (SC-74)

UMH3N

SOT-353 (SC-88)

EMH3 / UMH3N

IMH3A

Collector

(6)

(2)

Base

(1)

Emitter

(3)

Collector

Base

(5)

Emitter

(4)

Collector

(4)

(2)

Base

(3)

Emitter

(1)

Collector

Base

(5)

Emitter

(6)

(6)
(5)

(4)
(1)
(2)
(3)

(4)
(5)

(6)

(3)
(2)

(1)

(6)
(5)
(4)

(1)
(2)
(3)

1/6

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMH3 / UMH3N / IMH3A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

IC / IB= 5mA / 0.25mA

DC current gain

h

FE

VCE= 5V , IC= 1mA ,

Input resistance

R

1

-

Collector-emitter saturation voltage

V

CE(sat)

IE= 50mA

Collector cut-off current

I

CBO

V

CB

= 50V

Emitter cut-off current

I

EBO

V

EB

= 4V

Emitter-base breakdown voltage

BV

EBO

MHz

-

250

-

Transition frequency

fT

*1

V

CE

= 10V, IE = -5mA,

f = 100MHz

-

3.5

4.7

5.9kW100

250

600mA--0.15V--0.5V--0.5mA5--

V

Collector-emitter breakdown voltage

BV

CEO

IC= 1mA

V50-50---

Collector-base breakdown voltage

BV

CBO

IC= 50mA

Unit

Min.

Typ.

Max.

Parameter

Symbol

Conditions

T

j

150

°C

T

stg

-55 to +150

°C

I

C(MAX.)

*1

100

mA

EMH3 / UMH3N

P

D

*2

150 (Total)

*3

mW

IMH3A

300 (Total)

*4

mW

V

CEO

50

V

V

EBO

5

V

Parameter

Symbol

Values

Unit

V

CBO

50

V

2/6

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMH3 / UMH3N / IMH3A

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Grounded emitter propagation
characteristics

COLLECTOR CURRENT : Ic (mA)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter output
characteristics

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER

VOLTAGE : VCE (V)

Fig.3 DC Current gain
vs. Collector Current

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-emitter saturation voltage
vs. Collector Current

COLLECTOR SATURATION

VOLTAGE : V

CE

(sat) (V)

COLLECTOR CURRENT : IC (mA)

0

20

40

60

80

100

0 5 10

250μA

0A

300μA

350μA

400μA

450μA

500μA

200μA

150μA

100μA

IB=

Ta=25ºC

50μA

0.001

0.01

0.1

1

10

0 0.5 1 1.5 2

VCE=5V

Ta=100ºC

25

ºC

-40ºC

3/6

2012.06 - Rev.B