ROHM IMH2A Datasheet
EMH2 / UMH2N / IMH2A
Transistors
General purpose (dual digital transistors)
EMH2 / UMH2N / IMH2A
!!!!
Features
1) Two DTC144Es chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!!!!
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both DTr
!!!!
Equivalent circuit
EMH2 / UMH2N IMH2A
(3) (2) (1)
R
1
R
2
DTr
DTr
2
(4) (5) (6)
R1=47kΩ
R
!!!!
Packaging specifications
Type
EMH2
UMH2N
IMH2A
1
R
2
R
1
2
=47kΩ
Package
Code T2R T110
Basic ordering
unit (pieces)
(4) (5) (6)
R
1
R
2
DTr
DTr
2
R
2
R
1
(3) (2) (1)
R
1
=47kΩ
2
=47kΩ
R
8000 3000
−−
1
Taping
TN
3000
−−
and DTr2.
1
−−
!!!!
External dimensions
EMH2
All terminals have same dimensions
ROHM : EMT6
UMH2N
ROHM : UMT6
EIAJ : SC-88
IMH2A
ROHM : SMT6
EIAJ : SC-74
(Units : mm)
(3)
(4)
0.22
(6)
0.13
Abbreviated symbol : H2
)
4
(
)
5
(
0.2
)
6
(
0.15
0.1Min.
Abbreviated symbol : H2
)
6
(
0.3
)
(
)
(
0.15
0.3to0.6
Abbreviated symbol : H2
0.5
(2)(5)
0.5
(1)
1.2
1.6
)
3
(
)
2
(
)
1
(
1.25
2.1
All terminals have same dimensions
0to0.1
)
1
(
)
2
5
(
)
4
3
(
1.6
2.8
All terminals have same dimensions
0to0.1
1.0
0.65
0.65
0.7
0.5
0.95
0.95
0.8
1.6
1.3
2.0
0.9
2.9
1.9
1.1
Transistors
!!!!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power
dissipation
EMH2,UMH2N 150 (TOTAL)
IMH2A 300 (TOTAL)
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
V
CC
IN
V
I
O
C(Max.)
I
Pd
Tj
Tstg −55~+150
Limits
50 V
40
−10
30
100
150 °C
Unit
mA
mW
°C
EMH2 / UMH2N / IMH2A
V
1
∗
2
∗
!!!!
Electrical characteristics
(Ta = 25°C)
Parameter Symbol
I(off)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
∗
V
V
I(on)
V
O(on)
I
I
O(off)
I
G
I
T
R
1
2
/
R10.8 1 1.2 −−
R
!!!!Electrical characteristic curves
100
50
20
(V)
I(on)
10
Ta=−40°C
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
25°C
100°C
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(ON characteristics)
O
(A)
VO=0.3V
Typ. Max. Unit Conditions
Min.
−
−
0.5
3
−
−
−
0.1
0.3
−
−
0.18
mA
−−0.5 VCC=50V, VI=0VµA
68
−
−
−f
250 − VCE=10mA, IE=−5mA, f=100MHz
32.9
OUTPUT CURRENT : Io (A)
10m
500µ
200µ
100µ
50µ
20µ
10µ
5m
2m
1m
5µ
2µ
1µ
47
VCC=5V
Ta=100°C
25°C
−40°C
0.5 1.0 1.5 2.0 2.5 3.00
INPUT VOLTAGE : V
61.1
MH
kΩ
Fig.2 Output current vs. input voltage
(OFF characteristics)
CC
=5V, IO=100µA
V
V
O
=0.3V, IO=2mA
V
O/II
Z
=10mA/0.5mA
I
V
I
=5V
V
O
=5V, IO=5mA
∗
V
−
−
1k
I (off)
(V)
500
Ta=100°C
I
200
100
50
20
10
DC CURRENT GAIN : G
25°C
−40°C
5
2
1
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : I
VO=5V
O
(A)
Fig.3 DC current gain vs. output
current
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