ROHM EMD3, UMD3N, IMD3A Technical data

EMD3 / UMD3N / IMD3A

Transistors

General purpose
(Dual digital transistors)

EMD3 / UMD3N / IMD3A

zFeatures

1) Both the DTA114E chip and DTC114E chip in a EMT
or UMT or SMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.

3) Transistor elements are independent, eliminating
interference.

4) Mounting cost and area can be cut in half.

zStructure

Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)

The following characteristics apply to both the DT r

2, however , the “−” sign on DTr2 values for the PNP

DTr

1 and

type have been omitted.

zEquivalent circuit s

EMD3 / UMD3N IMD3A

(3) (2) (1)

R

1

R

2

R
R

1

=10kΩ

2

=10kΩ

DTr

2

R

2

R

(4) (5) (6)

DTr

1

(4) (5) (6)

R

1

R

2

DTr

1

DTr

2

(3) (2) (1)

1

1

=10kΩ

R

R

2

R2=10kΩ

R

1

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Supply voltage

Input voltage

Output current

Power
dissipation

Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

EMD3, UMD3N 150 (TOTAL)
IMD3A 300 (TOTAL)

C (Max.)

I

Tstg −55 to +150 ˚C

V

V

I

Pd

Tj 150 ˚C

Limits

CC

IN

O

50 V

−10
40
50

100

Unit

V

mA

mW

1

∗

2

∗

zDimensions (Unit : mm)

EMD3

ROHM : EMT6

UMD3N

ROHM : UMT6
EIAJ : SC-88

IMD3A

ROHM : SMT6
EIAJ : SC-74

(6) (5) (4)

(1) (2) (3)

Each lead has same dimensions

Abbreviated symbol : D3

(6) (5)(4)

(1) (2)(3)

Each lead has same dimensions

Abbreviated symbol : D3

(4) (5) (6)

(3) (2) (1)

Each lead has same dimensions

Abbreviated symbol : D3

Rev.D 1/3

EMD3 / UMD3N / IMD3A

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Transition frequency of the device

∗

zPackaging specifications

Package

Type

Code TR T108
Basic ordering

unit (pieces)
EMD3
UMD3N
IMD3A

zElectrical characteristic curves

1 (NPN)

DTr

100

50

20

(V)

I (on)

10

5

2
1

500m

INPUT VOLTAGE : V

200m
100m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

Ta=−40˚C

25˚C

100˚C

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

O

(A)

VO=0.3V

V
V

V

O (on)

I

I

O (off)

G

f

R

R2/R

I (off)

I (on)

I

I

T

1

1

T2R

8000

Typ. Max. Unit Conditions

Min.

CC

=

5V, I

O

=

−

3

−

−

−

30

− 250 − V
7

0.8

0.1

10

0.5

−

−

0.3

0.88

−

−

0.5

−

V

−

V

mA

µA

−

−

MHz

kΩ

13

1

1.2

−−

V

O

V

O

=

I
V

I

=

CC

V
V

O

CE

=

10mA, I

=

=

100µA

0.3V, I

O

=10

I

=

5V

=

50V, V

I

=

5V, I

O

=

5mA

10V, I

E

=

−5mA, f=100MHz

mA

0.5mA

0V

−

Taping

3000 3000

10m

5m
2m

Ta=100˚C

(A)

1m

25˚C

500

µ

−40˚C

µ

200
100

µ

50

µ

20

µ

10

µ

OUTPUT CURRENT : Io

5

µ

2

µ

1

µ

03

0.5 1 1.5 2 2.5
INPUT VOLTAGE : V

I (off)

VCC=5V

(V)

Fig.2 Output current vs. input voltage
(OFF characteristics)

1k

500

I

200
100

50

20
10

5

DC CURRENT GAIN : G

2
1

100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m

Ta=100˚C

OUTPUT CURRENT : I

Fig.3 DC current gain vs. output

current

25˚C

−40˚C

∗

VO=5V

O

(A)

Rev.D 2/3