ROHM IMD10A Technical data

IMD10A

Transistors

Power management (dual digital transistors)

IMD10A

zFeatures

1) Two digital class transistors in a SMT package.

2) Up to 500mA can be driven.

3) Low V

CE(sat) of drive transistors for low power

dissipation.

zDimensions (Unit : mm)

(4) (5) (6)

(3) (2) (1)

ROHM : SMT6
EIAJ : SC-74

Each lead has same dimensions

zPackage, marking, and p ackaging specifications

Part No. IMD10A

Package

Marking

Code

Basic ordering unit (pieces)

SMT6

D10
T108
3000

zAbsolute maximum ratings (Ta=25°C)

DTr

1

Parameter Symbol
Supply voltage
Input voltage
Collector current

DTr

2

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

CC

V

V

IN

I

C

CBO

V
V

CEO

V

EBO

I

C

Total

Parameter Symbol
Power dissipation
Junction temperature
Storage temperature

200mW per element must not be exceeded.

∗

Pd

Tj

Tstg

300(TOTAL)

−55 to +150

zEquivalent circuit

(4) (5) (6)

R2

R1

Unit

V

mA

Unit

V
V
V

mA

Unit
mW

°C
°C

DTr1

R1

R1=10kΩ
R2=100Ω

∗

DTr2

(3) (2) (1)

Limits

−50

−5 to +5V

−500

Limits

50
50

5

100

Limits

150

Rev.B 1/3

Transistors

zElectrical characteristics (T a=25°C)

DTr

1

Parameter

Input voltage
Output voltage

Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Transition frequency of the device.

∗

DTr

2

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio

Transition frequency f
Input resistance

Transition frequency of the device.

∗

Symbol

V

I(off)

V

I(on)

V

O(on)

I

I

I

O(off)

G

f

T

R

1

R2 /

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

T

R

1

IMD10A

Min. Typ. Max. Unit Conditions

−

−

0.3

1.5

−

−

−

−

I

68

−

70

1

80 100 120

50
50

5

R

−

−

−

1007250

−

−

−−

0.1

0.3

−

−

−

−

−

200
100

−

−

−

−

−

−

250 MHz∗VCE=

10

−

−

130

600

25

0.5

−

−

−

−

−

0.5

0.5

0.3

−

13

CC

= −5V , IO= −100µA

V

V

VO= −0.3V , IO= −100mA

O

= −100mA , II= −5mA

V

I

I

= −2V

V

mA

V

CC

µA

−

MHz

Ω

= −50V , VI=

I

O

= −100mA , VO= −5V

VCE= −10V , IE=

−

I

V

C

=

50µA

V

I

C

=

1mA

V

I

E

=

µA
µA

kΩ

50µA

CB

=

50V

V
V

EB

=

V

−

4V

I

C

=

10mA , IB=

V

CE

=

5V , IC=
10V , IE= −5mA , f=100MHz

0V

50mA , f=100MHz

−

−

1mA

1mA

−

∗

Rev.B 2/3