
IMD10A
Transistors
Power management (dual digital transistors)
IMD10A
zFeatures
1) Two digital class transistors in a SMT package.
2) Up to 500mA can be driven.
3) Low V
CE(sat) of drive transistors for low power
dissipation.
zDimensions (Unit : mm)
(4) (5) (6)
(3) (2) (1)
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
zPackage, marking, and p ackaging specifications
Part No. IMD10A
Package
Marking
Code
Basic ordering unit (pieces)
SMT6
D10
T108
3000
zAbsolute maximum ratings (Ta=25°C)
DTr
1
Parameter Symbol
Supply voltage
Input voltage
Collector current
DTr
2
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CC
V
V
IN
I
C
CBO
V
V
CEO
V
EBO
I
C
Total
Parameter Symbol
Power dissipation
Junction temperature
Storage temperature
200mW per element must not be exceeded.
∗
Pd
Tj
Tstg
300(TOTAL)
−55 to +150
zEquivalent circuit
(4) (5) (6)
R2
R1
Unit
V
mA
Unit
V
V
V
mA
Unit
mW
°C
°C
DTr1
R1
R1=10kΩ
R2=100Ω
∗
DTr2
(3) (2) (1)
Limits
−50
−5 to +5V
−500
Limits
50
50
5
100
Limits
150
Rev.B 1/3

Transistors
zElectrical characteristics (T a=25°C)
DTr
1
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device.
∗
DTr
2
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency f
Input resistance
Transition frequency of the device.
∗
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
f
T
R
1
R2 /
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
T
R
1
IMD10A
Min. Typ. Max. Unit Conditions
−
−
0.3
1.5
−
−
−
−
I
68
−
70
1
80 100 120
50
50
5
R
−
−
−
1007250
−
−
−−
0.1
0.3
−
−
−
−
−
200
100
−
−
−
−
−
−
250 MHz∗VCE=
10
−
−
130
600
25
0.5
−
−
−
−
−
0.5
0.5
0.3
−
13
CC
= −5V , IO= −100µA
V
V
VO= −0.3V , IO= −100mA
O
= −100mA , II= −5mA
V
I
I
= −2V
V
mA
V
CC
µA
−
MHz
Ω
= −50V , VI=
I
O
= −100mA , VO= −5V
VCE= −10V , IE=
−
I
V
C
=
50µA
V
I
C
=
1mA
V
I
E
=
µA
µA
kΩ
50µA
CB
=
50V
V
V
EB
=
V
−
4V
I
C
=
10mA , IB=
V
CE
=
5V , IC=
10V , IE= −5mA , f=100MHz
0V
50mA , f=100MHz
−
−
1mA
1mA
−
∗
Rev.B 2/3

Transistors
zElectrical characteristic curves
1k
Ta=
100
500
I
200
100
50
20
10
DC CURRENT GAIN : G
5
2
1
−500µ
°C
25
°C
−40
°C
−1m −2m −5m −10m−20m −50m
OUTPUT CURRENT : I
Fig.1 DC current gain vs.
Output current characteristics
−10m
−5m
−2m
(A)
−1m
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
OUTPUT CURRENT : Io
−5µ
−2µ
−1µ
0 −1 −2 −3
Fig.4 Output current vs.
Input voltage (OFF characteristics)
Ta=
100
25
−40
INPUT VOLTAGE : V
°C
°C
°C
VO
−100m−200m
O
(A)
I(off)
(V)
= −
VCC=−5V
5V
−
500m
(V)
−
200m
O(on)
−
100m
−
−
−
OUTPUT VOLTAGE : V
−500m
Ta=
100
°C
25
°C
−
40
50m
20m
10m
−
5m
−
2m
−
1m
−500µ−1m −2m −5m −10m −20m −50m −100m −200m −500m
OUTPUT CURRENT : I
°C
1
−
Fig.2 Output voltage vs.
Output current characteristics
1k
500
FE
200
100
Ta=
100
°C
25
50
20
10
5
DC CURRENT GAIN : h
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
°C
−
40
°C
COLLECTOR CURRENT : I
Fig.5 DC current gain vs. Collector current
IMD10A
−100
IO/I
I
=
20/1
O
(A)
−50
−20
(V)
I(on)
−10
−5
Ta=
−40
°C
25
−2
−1
−500m
INPUT VOLTAGE : V
−200m
−100m
−500µ
°C
100
°C
−1m −2m −5m −10m −20m −50m −100m −200m −500m
OUTPUT CURRENT : I
V
O
(A)
Fig.3 Input voltage vs. Output current
(ON characteristics)
1
(V)
V
CE
=
5V
500m
CE (sat)
200m
100m
COLLECTOR SATURATION VOLTAGE : V
C
(A)
Ta=
100
°C
25
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
°C
−
40
°C
COLLECTOR CURRENT : I
C
(A)
Fig.6 Collector-emitter saturation voltage
vs. Collector current
O
= −
lC/lB=10
0.3V
Rev.B 3/3

Appendix
Notes
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Appendix1-Rev2.0