ROHM IMB7A Datasheet
IMB7A
Transistors
General purpose (dual digital transistors)
IMB7A
Features
!!!!
1) Two DTA143T chips in a SMT package.
Circuit diagram
!!!!
R
1
R
1
Absolute maximum ratings
!!!!
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
200mW per element must not be exceeded.
∗
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
(Ta = 25°C)
Limits
−50
−50
−5
−100
300(TOTAL)
150
−55~+150
Unit
mW
External dimensions
!!!!
0.3
0.15
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
V
V
V
mA
∗
°C
°C
(Units : mm)
)
)
6
1
(
(
0.95
2.9
)
)
5
(
)
4
(
1.6
2.8
0to0.1
1.9
2
(
0.95
)
3
(
1.1
0.8
Each lead has same dimensions
Package, marking, and packaging specifications
!!!!
Type IMB7A
Package
Marking
Code
Basic
ordering unit
Electrical characteristics
!!!!
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
(pieces)
Parameter Symbol Min. Typ. Max. Unit Conditions
SMT6
B7
T110
3000
(Ta = 25°C)
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
FE
h
V
CE(sat)
R
1
−
−50
−
−50
−
−5
−
−
−
−
100 250 600
−
−
3.29 4.7−6.11 kΩ
−0.5
−0.5
−0.3
−
−
−
V
V
µA
µA
−
V
C
=−50µA
C
=−1mA
I
I
E
=−50µA
CB
=−50V
V
V
EB
=−4V
CE/IC
=−5V/−1mA
V
C/IB
=−5mA /−0.25mA
I
I
V
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