Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
EMB3 / UMB3N / IMB3A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
l
Outline
l
Features
1) Built-In Biasing Resistors.
2) Two DTA143T chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
l
Inner circuit
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
l
Application
Inverter circuit, Interface circuit, Driver circuit
l
Packaging specifications
3,000
B3
UMB3N
UMT6
2021
TR
180
8
SMT6
2928
T108
180
8
8,000B38
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
EMB3
EMT6
1616
T2R
180
3,000
B3
IMB3A
Part No.
Package
Package
size
(mm)
Taping
code
R
1
4.7kW
Parameter
Tr1 and Tr2
V
CEO
-50V
I
C(MAX.)
-100mA
EMT6
UMT6
SMT6
EMB3
(SC-107C)
IMB3A
SOT-457 (SC-74)
UMB3N
SOT-353 (SC-88)
Collector
(6)
(2)
Base
(1)
Emitter
(3)
Collector
Base
(5)
Emitter
(4)
EMB3 / UMB3N
IMB3A
Collector
(4)
(2)
Base
(3)
Emitter
(1)
Collector
Base
(5)
Emitter
(6)
(6)
(5)
(4)
(1)
(2)
(3)
(4)
(5)
(6)
(3)
(2)
(1)
(6)
(5)
(4)
(1)
(2)
(3)
1/6
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMB3 / UMB3N / IMB3A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
IC / IB= -5mA / -0.25mA
DC current gain
h
FE
VCE= -5V , IC= -1mA ,
Input resistance
R
1
-
Collector-emitter saturation voltage
V
CE(sat)
IE= -50mA
Collector cut-off current
I
CBO
V
CB
= -50V
Emitter cut-off current
I
EBO
V
EB
= -4V
Emitter-base breakdown voltage
BV
EBO
MHz
-
250
-
Transition frequency
fT
*1
V
CE
= -10V, IE = 5mA,
f = 100MHz
-
3.29
4.7
6.11kW100
250
600mA-
-
-0.3
V--
-0.5
V--
-0.5mA-5
--V
Collector-emitter breakdown voltage
BV
CEO
IC= -1mA
V
-50--50
---
Collector-base breakdown voltage
BV
CBO
IC= -50mA
Unit
Min.
Typ.
Max.
Parameter
Symbol
Conditions
T
j
150
°C
T
stg
-55 to +150
°C
I
C(MAX.)
*1
-100
mA
EMB3 / UMB3N
P
D
*2
150 (Total)
*3
mW
IMB3A
300 (Total)
*4
mW
V
CEO
-50
V
V
EBO
-5
V
Parameter
Symbol
Values
Unit
V
CBO
-50
V
2/6
2012.06 - Rev.C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMB3 / UMB3N / IMB3A
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : Ic (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter output
characteristics
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
Fig.3 DC Current gain
vs. Collector Current
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
COLLECTOR CURRENT : IC (mA)
0
-20
-40
-60
-80
-100
0 -2 -4 -6 -8 -10
-250μA
0A
-300μA
-350μA
-400μA
-450μA
-500μA
-200μA
-100μA
IB=
-150μA
-50μA
Ta=25ºC
-0.001
-0.01
-0.1
-1
-10
0 -0.5 -1 -1.5 -2
VCE= -5V
Ta=100ºC
25
ºC
-40ºC
3/6
2012.06 - Rev.C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMB3 / UMB3N / IMB3A
lDimensions (Unit : mm)
Dimension in mm/inches
EMT6
Patterm of terminal position areas
b
D
e
Lp
Lp
E
H
E
LL
x S A
A
c
A1
A
y
S
S
e1
b2
l1
e
MIN MAX MIN MAX
A1 0.00 0.10 0 0.004
A 0.45 0.55 0.018 0.022
b 0.17 0.27 0.007 0.011
c 0.08 0.18 0.003 0.007
D 1.50 1.70 0.059 0.067
E 1.10 1.30 0.043 0.051
e
HE 1.50 1.70 0.059 0.067
L 0.10 0.30 0.004 0.012
Lp - 0.35 - 0.014
x - 0.10 - 0.00 4
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b2 - 0.37 - 0.015
l1 - 0.45 - 0.018
INCHES
0.50
0.02
DIM
MILIMETERS
MILIMETERS
INCHES
1.25
0.049
DIM
4/6
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMB3 / UMB3N / IMB3A
lDimensions (Unit : mm)
Dimension in mm/inches
UMT6
Patterm of terminal position areas
E
x S A
A
E
H
e
D
b
c
Q
A3
L1
Lp
y
S
A1
e1
b2
l1
e
A
S
MIN MAX MIN MAX
A 0.80 1.00 - 0.039
A1 0.00 0.10 0 0.004
A3
b 0.15 0.30 0.006 0.012
c 0.10 0.20 0.004 0.008
D 1.90 2.10 0.075 0.083
E 1.15 1.35 0.045 0.053
e
HE 2.00 2.20 0.0 79 0.087
L1 0.20 0.50 0.008 0.02
Lp 0.25 0.5 5 0 .01 0.022
Q 0.10 0.30 0.004 0.012
x - 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b2 - 0.40 - 0.016
l1 - 0.65 - 0.026
0.25
0.01
DIM
MILIMETERS
INCHES
1.55
0.06
DIM
MILIMETERS
INCHES
0.65
0.03
5/6
2012.06 - Rev.C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMB3 / UMB3N / IMB3A
lDimensions (Unit : mm)
Dimension in mm/inches
SMT6
Patterm of terminal position areas
E
e
D
E
H
b
x S A
A
c
Q
A3
L1
Lp
A1
A
S
y
S
e1
e
l1
b2
MIN MAX MIN MAX
A 1.00 1.30 0.039 0.051
A1 0.00 0.10 0 0.004
A3
b 0.25 0.40 0.01 0.016
c 0.09 0.25 0.004 0.01
D 2.80 3.00 0.11 0.118
E 1.50 1.80 0 .059 0.071
e
HE 2.60 3.00 0.102 0.118
L1 0.30 0.60 0.012 0.024
Lp 0.40 0.70 0.016 0.028
Q 0.20 0.30 0.008 0.012
x - 0.20 - 0.008
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b2 0.60 - 0.024
l1 - 0.90 - 0.035
0.25
0.01
DIM
MILIMETERS
INCHES
2.10
0.08
DIM
MILIMETERS
INCHES
0.95
0.04
6/6
2012.06 - Rev.C
Notes
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The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinaf ter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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