ROHM IMB2A Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

EMB2 / UMB2N / IMB2A

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

1) Built-In Biasing Resistors, R1 = R2 = 47kW.

2) Two DTA144E chips in one package.

3) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit).

4) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

l

Inner circuit

of the input. They also have the advantage of

completely eliminating parasitic effects.

5) Only the on/off conditions need to be set for

operation, making the circuit design easy.

6) Lead Free/RoHS Compliant.

l

Application

Inverter circuit, Interface circuit, Driver circuit

l

Packaging specifications

EMT6

UMT6

SMT6

3,000

B2

UMB2N

UMT6

2021

TR

180

8

SMT6

2928

T108

180

8

8,000B28

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

EMB2

EMT6

1616

T2R

180

3,000

B2

IMB2A

Part No.

Package

Package

size

(mm)

Taping

code

Parameter

Tr1 and Tr2

V

CC

-50V

I

C(MAX.)

-100mA

R

1

47kW

R

2

47kW

EMB2

(SC-107C)

IMB2A

SOT-457 (SC-74)

UMB2N

SOT-353 (SC-88)

OUT

(6)

(2)

IN

(1)

GND

(3)

OUT

IN

(5)

GND

(4)

OUT

(4)

(2)

IN

(3)

GND

(1)

OUT

IN

(5)

GND

(6)

EMB2 / UMB2N

IMB2A

(6)
(5)

(4)
(1)
(2)
(3)

(4)
(5)

(6)

(3)
(2)

(1)

(6)
(5)
(4)

(1)
(2)
(3)

1/7

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMB2 / UMB2N / IMB2A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Supply voltage

Input voltage

Output current

Collector current

Power dissipation

Junction temperature

Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

V
V

I(on)

VO = -0.3V, IO = -2mA

Output voltage

V

O(on)

IO / II = -10mA / -0.5mA

V

-

-0.5

Resistance ratio

R2/R

1

-

Input current

I

I

VI = -5V

Output current

I

O(off)

V

CC

= -50V, VI = 0V

DC current gain

G

I

VO = -5V, IO = -5mA

Input resistance

R

1

-

MHz

-

250

-

Transition frequency

fT

*1

V

CE

= -10V, IE = 5mA,

f = 100MHz

kW

0.811.2-32.9

47

61.168-----

-0.5

mA

-

-0.1

-0.3

mA

-

-

-0.18

Parameter

-

-

Input voltage

V

I(off)

V

CC

= -5V, IO = -100mA

Symbol

Conditions

-3.0

-

Unit

Min.

Typ.

Max.

T

j

150

°C

T

stg

-55 to +150

°C

I

C(MAX.)

*1

-100

mA

EMB3 / UMB3N

P

D

*2

150 (Total)

*3

mW

IMB3A

300 (Total)

*4

mW

V

IN

-40 to +10

V

I

O

-30

mA

Parameter

Symbol

Values

Unit

V

CC

-50

V

2/7

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMB2 / UMB2N / IMB2A

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Input voltage vs. output current
(ON characteristics)

INPUT VOLTAGE : V

I(on)

[V]

OUTPUT CURRENT : IO [A]

Fig.2 Output current vs. input voltage
(OFF characteristics)

OUTPUT CURRENT : I

O

[A]

INPUT VOLTAGE : V

I(off)

[V]

Fig.3 Output current vs. output voltage

OUTPUT CURRENT : I

O

[mA]

OUTPUT VOLTAGE : VO [V]

Fig.4 DC current gain vs. output current

DC CURRENT GAIN : G

I

OUTPUT CURRENT : IO [A]

0

-5

-10

-15

-20

-25

-30

0 -5 -10

-40μA

0A

-60μA

-70μA

-80μA

-90μA

-100μA

-110μA

-120μA

-130μA

II=

Ta=25ºC

-30μA

-50μA

3/7

2012.06 - Rev.B