FMY4A
Transistors
Power management (dual transistors)
FMY4A
zFeature
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
zEquivalent circuit s
FMY4A
(3)
(4) (5)
Tr
Tr
1
2
zExternal dimensions (Unit : mm)
FMY4A
ROHM : SMT5
EIAJ : SC-74A
0.3
0.15
0.3to0.6
)
)
3
2
(
(
0.95
)
4
(
0.95
)
)
1
5
(
(
1.6
2.8
0to0.1
Each lead has same dimensions
1.9
2.9
0.8
(2) (1)
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 200mW per element must not be exceeded.
∗
V
V
V
Tstg
CBO
CEO
EBO
I
Tj
C
C
Limits
1
Tr
Tr
−60 60
−50 50 V
−67
−150 150
300 (TOTAL)
150
−55 to +150
zPackage, marking, and packaging specifications
Part No. FMY4A
Package
Marking
Code
Basic ordering unit (pieces)
SMT5
Y4
T148
3000
Unit
2
mA
V
V
1mWP
∗
°C
°C
Rev.A 1/4
FMY4A
Transistors
zElectrical characteristics (Ta=25°C)
Tr1 (PNP)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance
Transition frequency of the device.
∗
Tr
2
(NPN)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance
Transition frequency of the device.
∗
zElectrical characteristics curves
PNP Tr
−50
−20
mA)
−10
−5
−2
−1
−0.5
COLLECTOR CURRENT : Ic (
−0.2
−0.1
Fig.1 Grounded emitter propagation
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
BV
BV
BV
V
CBO
CEO
I
CBO
I
EBO
CE(sat)
h
FE
T
f
Cob
EBO
−60 −− VIC = −50µA
I
V
−
−50
120
−
−
−
−6
−
−
−
−
−
140
−0.1
−
−0.1
−
−0.5
−
560
−
−
4
5
V
µA
µA
V
−
MHzpFV
C
= −1mA
E
= −50µA
I
V
CB
= −60V
V
EB
= −6V
I
C/IB
= −50mA/−5mA
V
CE
= −6V , IC = −1mA
CE
= −12V , IE = 2mA , f = 100MHz
CB
= −12V , IE = 0A , f = 1MHz
V
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
Ta=100˚C
25˚C
−40˚C
−0.2
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (
VCE= −6V
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
V)
60 −−VIC = 50µA
−
−
50
7
−
−
−
120
−
−
−10
Ta=25˚C
−8
mA)
(
C
−6
−4
−2
COLLECTOR CURRENT : I
−0.4
COLLECTOR TO MITTER VOLTAGE : VCE (
−
−
0.1
−
0.1
−
0.4
−
560
−
180
−
2
3.5
−1.20
−0.8 −1.6 −2.0
V
V
µA
µA
V
−
MHzpFV
−35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5µA
B
=0
I
I
C
= 1mA
E
= 50µA
I
V
CB
= 60V
V
EB
= 7V
I
C/IB
= 50mA/5mA
V
CE
= 6V , IC = 1mA
CE
= 12V , IE = −2mA , f = 100MHz
CB
= 12V , IE = 0A , f = 1MHz
V
V)
Fig.2 Grounded emitter output
characteristics
characteristics (Ι)
∗
∗
−100
Ta=25˚C
)
−500
mA
(
−450
−80
C
−400
−350
−300
−60
−40
−20
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : VCE (
Fig.3 Grounded emitter output
characteristics (ΙΙ)
−250
−200
−150
−100
−50µA
IB=0
−5−3 −4−2−1
V)
Rev.A 2/4
FMY4A
Transistors
500
Ta=25˚C
FE
200
100
DC CURRENT GAIN : h
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (
VCE= −5V
−3V
−1V
mA)
Fig.4 DC current gain vs.
collector current (Ι)
−1
V)
(
CE(sat)
−0.5
−0.2
Ta=100˚C
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : V
25˚C
−40˚C
COLLECTOR CURRENT : IC (
lC/lB=10
mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
NPN Tr
50
20
(mA)
C
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
C
C
°
C
25
55°
100°
−
=
Ta
Fig.10 Grounded emitter propagation
characteristics
V
CE
=6V
BE
(V)
500
FE
200
100
50
DC CURRENT GAIN : h
−0.2 −0.5 −1 −2 −5 −10 −20 −50−100
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (
Fig.5 DC current gain vs.
collector current (ΙΙ)
1000
500
MHz)
200
100
50
TRANSITION FREQUENCY : fT (
12 510
EMITTER CURRENT : I
Fig.8 Gain bandwidth product vs.
emitter current
100
Ta=25°C
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
0.4 0.8 1.2 1.6 2.00
COLLECTOR TO EMITTER VOLTAGE : V
Fig.11 Grounded emitter output
characteristics ( Ι )
Ta=25˚C
VCE= −12V
E (
mA)
VCE= −6V
mA)
50 1000.5 20
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
CE
(V)
−1
V)
−0.5
−0.2
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : VCE(sat) (
IC/IB=
50
20
10
COLLECTOR CURRENT : IC (
Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)
20
pF)
pF)
10
5
2
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
EMITTER TO BASE VOLTAGE : V
Fig.9
Cib
Cob
−0.5 −20
−1 −2 −5 −10
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
10
Ta=25°C
(mA)
8
C
6
4
2
COLLECTOR CURRENT : I
0
4 8 12 16
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.12 Grounded emitter output
characteristics ( ΙΙ )
30µA
27µA
24µA
21µA
18µA
15µA
12µA
9µA
6µA
3µA
IB=0A
Ta=25˚C
mA)
Ta=25˚C
f=1MHz
IE
=
0A
IC
=
0A
EB (V)
20
CE
(V)
Rev.A 3/4
FMY4A
Transistors
500
Ta=25°C
FE
200
100
50
VCE=5V
3V
1V
500
FE
200
100
50
Ta=100°C
25°C
−55°C
VCE=
5V
(V)
CE(sat)
0.05
0.5
0.2
IC/IB=50
0.1
20
10
Ta=25°C
DC CURRENT GAIN : h
20
10
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig.13 DC current gain vs.
collector current ( Ι )
0.5
(V)
CE(sat)
0.2
Ta=100°C
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
25°C
−55°C
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
IC/IB=10
Fig.16 Collector-emitter saturation
voltage vs. collector current ( Ι )
pF)
pF)
20
10
5
Cib
Ta=25°C
f=1MHz
I
I
E
C
=0A
=0A
DC CURRENT GAIN : h
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig.14 DC current gain vs.
collector current ( ΙΙ )
0.5
(V)
CE(sat)
0.2
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
25°C
−55°C
0.5 1 2 5 10 20 50 100
0.2
COLLECTOR CURRENT : I
C
(mA)
IC/IB=50
Fig.17 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
(ps)
bb'
200
100
50
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Fig.15 Collector-emitter saturation
voltage vs. collector current
500
(MHz)
T
200
100
TRANSITION FREQUENCY : f
50
−0.5 −1 −2 −5 −10 −20 −50 −100
EMITTER CURRENT : I
Fig.18 Gain bandwidth product vs.
emitter current
Ta=25°C
Z
f=32MH
VCB=6V
C
Ta=25°C
E
(mA)
(mA)
V
CE
=6V
2
EMITTER INPUT CAPACITANCE : Cib (
1
COLLECTOR OUTPUT CAPACITANCE : Cob (
0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Cob
CB
(V)
EB
(V)
Fig.19 Collector output capacitance vs.
collector-base voltage
20
10
−0.2 −0.5 −1 −2 −5 −10
BASE COLLECTOR TIME CONSTANT : Cc·r
EMITTER CURRENT : I
E
(mA)
Fig.20 Base-collector time constant
vs. emitter current
Emitter input capacitance vs.
emitter-base voltage
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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