ROHM FMY4A Technical data

FMY4A

Transistors

Power management (dual transistors)

FMY4A

zFeature

1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.

zEquivalent circuit s

FMY4A

(3)

(4) (5)

Tr

Tr

1

2

zExternal dimensions (Unit : mm)

FMY4A

ROHM : SMT5
EIAJ : SC-74A

0.3

0.15

0.3to0.6

)

)

3

2

(

(

0.95

)

4

(

0.95

)

)

1

5

(

(

1.6

2.8

0to0.1

Each lead has same dimensions

1.9

2.9

0.8

(2) (1)

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

1 200mW per element must not be exceeded.

∗

V
V
V

Tstg

CBO
CEO
EBO

I

Tj

C

C

Limits

1

Tr

Tr

−60 60

−50 50 V

−67

−150 150

300 (TOTAL)

150

−55 to +150

zPackage, marking, and packaging specifications

Part No. FMY4A
Package

Marking

Code

Basic ordering unit (pieces)

SMT5

Y4
T148
3000

Unit

2

mA

V

V

1mWP

∗

°C
°C

Rev.A 1/4

FMY4A

Transistors

zElectrical characteristics (Ta=25°C)

Tr1 (PNP)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance

Transition frequency of the device.

∗

Tr

2

(NPN)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance

Transition frequency of the device.

∗

zElectrical characteristics curves

PNP Tr

−50

−20

mA)

−10

−5

−2

−1

−0.5

COLLECTOR CURRENT : Ic (

−0.2

−0.1

Fig.1 Grounded emitter propagation

Parameter Symbol Min. Typ. Max. Unit Conditions

transfer ratio

BV
BV
BV

V

CBO
CEO

I

CBO

I

EBO

CE(sat)

h

FE
T

f

Cob

EBO

−60 −− VIC = −50µA
I

V

−

−50

120

−

−

−

−6

−

−

−

−

−

140

−0.1

−

−0.1

−

−0.5

−

560

−

−

4

5

V

µA
µA

V

−

MHzpFV

C

= −1mA

E

= −50µA

I
V

CB

= −60V

V

EB

= −6V

I

C/IB

= −50mA/−5mA

V

CE

= −6V , IC = −1mA

CE

= −12V , IE = 2mA , f = 100MHz

CB

= −12V , IE = 0A , f = 1MHz

V

Parameter Symbol Min. Typ. Max. Unit Conditions

transfer ratio

Ta=100˚C

25˚C

−40˚C

−0.2

−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6

BASE TO EMITTER VOLTAGE : VBE (

VCE= −6V

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

Cob

V)

60 −−VIC = 50µA

−

−

50

7

−

−

−

120

−

−

−10

Ta=25˚C

−8

mA)

(

C

−6

−4

−2

COLLECTOR CURRENT : I

−0.4

COLLECTOR TO MITTER VOLTAGE : VCE (

−

−

0.1

−

0.1

−

0.4

−

560

−

180

−

2

3.5

−1.20

−0.8 −1.6 −2.0

V
V

µA
µA

V

−

MHzpFV

−35.0

−31.5

−28.0

−24.5

−21.0

−17.5

−14.0

−10.5

−7.0

−3.5µA

B

=0

I

I

C

= 1mA

E

= 50µA

I
V

CB

= 60V

V

EB

= 7V

I

C/IB

= 50mA/5mA

V

CE

= 6V , IC = 1mA

CE

= 12V , IE = −2mA , f = 100MHz

CB

= 12V , IE = 0A , f = 1MHz

V

V)

Fig.2 Grounded emitter output

characteristics

characteristics (Ι)

∗

∗

−100

Ta=25˚C

)

−500

mA

(

−450

−80

C

−400

−350

−300

−60

−40

−20

COLLECTOR CURRENT : I

0

COLLECTOR TO EMITTER VOLTAGE : VCE (

Fig.3 Grounded emitter output

characteristics (ΙΙ)

−250

−200

−150

−100

−50µA

IB=0

−5−3 −4−2−1

V)

Rev.A 2/4