ROHM FMY4A Technical data
FMY4A
Transistors
Power management (dual transistors)
FMY4A
zFeature
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
zEquivalent circuit s
FMY4A
(3)
(4) (5)
Tr
Tr
1
2
zExternal dimensions (Unit : mm)
FMY4A
ROHM : SMT5
EIAJ : SC-74A
0.3
0.15
0.3to0.6
)
)
3
2
(
(
0.95
)
4
(
0.95
)
)
1
5
(
(
1.6
2.8
0to0.1
Each lead has same dimensions
1.9
2.9
0.8
(2) (1)
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 200mW per element must not be exceeded.
∗
V
V
V
Tstg
CBO
CEO
EBO
I
Tj
C
C
Limits
1
Tr
Tr
−60 60
−50 50 V
−67
−150 150
300 (TOTAL)
150
−55 to +150
zPackage, marking, and packaging specifications
Part No. FMY4A
Package
Marking
Code
Basic ordering unit (pieces)
SMT5
Y4
T148
3000
Unit
2
mA
V
V
1mWP
∗
°C
°C
Rev.A 1/4
FMY4A
Transistors
zElectrical characteristics (Ta=25°C)
Tr1 (PNP)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance
Transition frequency of the device.
∗
Tr
2
(NPN)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance
Transition frequency of the device.
∗
zElectrical characteristics curves
PNP Tr
−50
−20
mA)
−10
−5
−2
−1
−0.5
COLLECTOR CURRENT : Ic (
−0.2
−0.1
Fig.1 Grounded emitter propagation
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
BV
BV
BV
V
CBO
CEO
I
CBO
I
EBO
CE(sat)
h
FE
T
f
Cob
EBO
−60 −− VIC = −50µA
I
V
−
−50
120
−
−
−
−6
−
−
−
−
−
140
−0.1
−
−0.1
−
−0.5
−
560
−
−
4
5
V
µA
µA
V
−
MHzpFV
C
= −1mA
E
= −50µA
I
V
CB
= −60V
V
EB
= −6V
I
C/IB
= −50mA/−5mA
V
CE
= −6V , IC = −1mA
CE
= −12V , IE = 2mA , f = 100MHz
CB
= −12V , IE = 0A , f = 1MHz
V
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
Ta=100˚C
25˚C
−40˚C
−0.2
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (
VCE= −6V
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
V)
60 −−VIC = 50µA
−
−
50
7
−
−
−
120
−
−
−10
Ta=25˚C
−8
mA)
(
C
−6
−4
−2
COLLECTOR CURRENT : I
−0.4
COLLECTOR TO MITTER VOLTAGE : VCE (
−
−
0.1
−
0.1
−
0.4
−
560
−
180
−
2
3.5
−1.20
−0.8 −1.6 −2.0
V
V
µA
µA
V
−
MHzpFV
−35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5µA
B
=0
I
I
C
= 1mA
E
= 50µA
I
V
CB
= 60V
V
EB
= 7V
I
C/IB
= 50mA/5mA
V
CE
= 6V , IC = 1mA
CE
= 12V , IE = −2mA , f = 100MHz
CB
= 12V , IE = 0A , f = 1MHz
V
V)
Fig.2 Grounded emitter output
characteristics
characteristics (Ι)
∗
∗
−100
Ta=25˚C
)
−500
mA
(
−450
−80
C
−400
−350
−300
−60
−40
−20
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : VCE (
Fig.3 Grounded emitter output
characteristics (ΙΙ)
−250
−200
−150
−100
−50µA
IB=0
−5−3 −4−2−1
V)
Rev.A 2/4
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