ROHM EMY1, UMY1N, FMY1A Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

EMA2 / UMA2N / FMA2A

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

1) Built-In Biasing Resistors, R1 = R2 = 47kW.

2) Two DTA144E chips in one package.

3) Emitter(GND)-common type.

4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

5) The bias resistors consist of thin-film resistors

l

Inner circuit

with complete isolation to allow negative biasing

of the input. They also have the advantage of
completely eliminating parasitic effects.

6) Only the on/off conditions need to be set for
operation, making the circuit design easy.

7) Lead Free/RoHS Compliant.

l

Application

Interface circuit, Driver circuit

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Packaging specifications

EMT5

UMT5

SMT5

3,000

A2

UMA2N

UMT5

2021

TR

180

8

SMT5

2928

T148

180

8

8,000A28

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

EMA2

EMT5

1616

T2R

180

3,000

A2

FMA2A

Part No.

Package

Package

size

(mm)

Taping

code

Parameter

Tr1 and Tr2

V

CC

-50V

I

C(MAX.)

-100mA

R

1

47kW

R

2

47kW

EMA2

(SC-107BB)

FMA2A

(SC-74A)

UMA2N

SOT-353 (SC-88A)

(1)

(5)

(4)

(2)

(3)

EMA2 / UMA2N

FMA2A

(4)

OUT

IN

(3)

GND

(2)

(5)

OUT

IN

(1)

(2)

OUT

IN

(3)

GND

(4)

(1)

OUT

IN

(5)

(2)

(1)

(3)

(4)

(5)

(5)

(1)

(2)

(4)

(3)

1/6

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMA2 / UMA2N / FMA2A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Supply voltage
Input voltage
Output current
Collector current

Power dissipation EMA2 / UMA2N

FMA2A

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

P

D

*2

150 (Total)

*3

300 (Total)

*4

mW

mW

-

-

250

-

MHz

0.811.2-32.9

47

61.1kW68--mA-

-

-0.5

mA

-

-

-0.18

Unit--

-0.5

Min.

Typ.

Max.

V

T

j

150

°C

T

stg

-55 to +150

°C

I

C(MAX.)

*1

-100

mA

V

IN

-40 to +10

V

I

O

-30

mA

Parameter

Symbol

Values

Unit

V

CC

-50

V

-

-0.1

-0.3V-3

-

-

Transition frequency

fT

*1

V

CE

= -10V, IE = 5mA,

f = 100MHz

VI = -5V

Output current

I

O(off)

V

CC

= -50V, VI = 0V

DC current gain

G

I

VO = -5V, IO = -5mA

Input current

I

I

Input resistance

R

1

Parameter

Symbol

Conditions

-

Resistance ratio

R2/R

1

-

V

CC

= -5V, IO = -100mA

V

I(on)

VO = -0.3V, IO = -2mA

Output voltage

V

O(on)

IO / II = -10mA / -0.5mA

Input voltage

V

I(off)

2/6

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMA2 / UMA2N / FMA2A

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Input voltage vs. output current
(ON characteristics)

INPUT VOLTAGE : V

I(on)

[V]

OUTPUT CURRENT : IO [A]

Fig.2 Output current vs. input voltage
(OFF characteristics)

OUTPUT CURRENT : I

O

[A]

INPUT VOLTAGE : V

I(off)

[V]

Fig.3 Output current vs. output voltage

OUTPUT CURRENT : I

O

[mA]

OUTPUT VOLTAGE : VO [V]

Fig.4 DC current gain vs. output current

DC CURRENT GAIN : G

I

OUTPUT CURRENT : IO [A]

0

-5

-10

-15

-20

-25

-30

0 -5 -10

-40μA

0A

-60μA

-70μA

-80μA

-90μA

-100μA

-110μA

-120μA

-130μA

II=

Ta=25ºC

-30μA

-50μA

3/6

2012.06 - Rev.B