ROHM FMS4, FMS3 Datasheet
FMS3 / FMS4 / IMT4
Transistors
General purpose (dual transistors)
FMS3 / FMS4 / IMT4
Features
!
1) Two 2SA1514K chips in an AMT package.
2) High breakdown voltage.
Absolute maximum ratings
!!!!
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
200mW per element must not be exceeded.
∗
Package, marking, and Packaging specifications
!!!!
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
Circuit diagram
!!!!
FMS3 FMS4 IMT4
V
V
V
Tstg
Pc
CBO
CEO
EBO
I
C
Tj
FMS3
SMT5
T148
3000
(Ta=25°C)
S3
Limits
−120
−120
−5
−50
300 (TOTAL)
150
−55∼+150
FMS4
SMT5
S4
T148
3000
Unit
mW
mA
˚C
˚C
V
V
V
IMT4
SMT6
T4
T108
3000
External dimensions
!!!!
(Units : mm)
FMS3
)
)
3
2
(
(
0.95
2.9
1.9
)
4
(
0.95
)
)
1
5
(
(
1.6
2.8
1.1
0.8
0to0.1
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
0.3
0.15
0.3to0.6
∗
FMS4
ROHM : SMT5
EIAJ : SC-74A
IMT4
ROHM : SMT6
EIAJ : SC-74
0.3
0.15
0.3to0.6
0.3
0.15
0.3to0.6
)
)
3
2
(
(
0.95
2.9
1.9
)
4
(
0.95
)
)
1
5
(
(
1.6
2.8
1.1
0.8
0to0.1
Each lead has same dimensions
)
)
6
1
(
(
0.95
)
)
5
(
)
4
(
1.6
2.8
0to0.1
1.9
2
(
0.95
)
3
(
1.1
0.8
Each lead has same dimensions
Electrical characteristics
!!!!
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency f
Collector-emitter saturation voltage
∗Transition frequency of the device.
Parameter Symbol Min. Typ. Max. Unit Conditions
(Ta=25°C)
BV
BV
BV
V
I
CBO
I
EBO
h
CE(sat)
CBO
−120
−120
CEO
−5
EBO
−
−
FE
180 − 820 − V
T
− 140 − MHz∗V
−
−
−
−
−
−
−0.5
−
−0.5
−
−0.5
−
C
=
−50µA
V
I
C
=
−1mA
V
I
E
=
−50µA
µA
V
CB
=
−100V
µA
V
EB
=
−4V
CE
=
−6V, IC−2mA
CE
=
−12V, I
E
=
C/IB
=
−10mA/−1mA
2mA, f=100MHz
V
I
I
V
−
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