ROHM FML9 Schematic [ru]
Transistors
General purpose transistor
(isolated transistor and diode)
FML9
A 2SB1689 and a RB461F are housed independently in a UMT p ackage.
zApplica tions
DC / DC converter
Motor driver
zFeatures
1) Tr : Low V
Di : Low V
CE(sat)
F
2) Small package
zStructure
Silicon epitaxial planar transistor
Schottky barrier diode
zEquivalent circuit
(5)(4)(3)
Di2
Tr1
(2) (1)
zPackaging specifications
Type FML9
Package
Marking
Code
Basic ordering unit(pieces)
SMT5
L9
TR
3000
zExternal dimensions (Unit : mm)
FML9
0.3
0.15
0.3Min.
ROHM : SMT5
EIAJ : SC-74A
)
)
3
2
(
(
0.95
2.9
1.9
)
4
(
0.95
)
)
1
5
(
(
1.6
2.8
1.1
0.8
0~0.1
Each lead has same dimensions
FML9
Rev.A 1/4
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
Di2
Parameter Symbol
Reak reverse voltage
Average rectified forward current
orward current surge peak (60HZ, 1∞)
F
Reverse voltage (DC)
Junction temperature
Range of storage temperature
zElectrical characteristics (Ta=25°C)
Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Di2
Parameter Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
CBO
V
V
CEO
V
EBO
I
I
CP
Pc
Tj
Tstg
C
V
RM
I
I
FSM
V
Tj
Tstg
F
R
Symbol
Limits
−15
−12
−6
−1.5
−3
200
150
−40 to +125
Unit
V
V
V
A
A
mW
°C
°C
∗1
∗2
Limits
25 V
700
3
20
125
−40 to +125
BV
CEO
CBO
BV
EBO
BV
CBO
I
EBO
I
CE(sat)
V
FE
h
f
T
Cob − 12 −
V
F
I
R
Unit
mA
A
V
°C
°C
−12
−15
−6
−−
−−
−−
−−
−−
−−110
270 − 680
400
−
−
− 200
−
V
V
V
−100
−100
nA VCB=−15V
nA VEB=−6V
−200 mV
− VCE=−2V, IC=−200mA
MHz
−
pF
490− mV I
µA
FML9
IC=−1mA
C
=−10µA
I
IE=−10µA
IC=−500mA, IB=−25mA
VCE=−2V, IE=200mA, f=100MHz
CB
=−10V, IE=0mA, f=1MHz
V
F
=700mA
V
R
=20V
Rev.A 2/4
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