Transistors
General purpose transistor
(isolated transistor and diode)
FML9
A 2SB1689 and a RB461F are housed independently in a UMT p ackage.
zApplica tions
DC / DC converter
Motor driver
zFeatures
1) Tr : Low V
Di : Low V
CE(sat)
F
2) Small package
zStructure
Silicon epitaxial planar transistor
Schottky barrier diode
zEquivalent circuit
(5)(4)(3)
Di2
Tr1
(2) (1)
zPackaging specifications
Type FML9
Package
Marking
Code
Basic ordering unit(pieces)
SMT5
L9
TR
3000
zExternal dimensions (Unit : mm)
FML9
0.3
0.15
0.3Min.
ROHM : SMT5
EIAJ : SC-74A
)
)
3
2
(
(
0.95
2.9
1.9
)
4
(
0.95
)
)
1
5
(
(
1.6
2.8
1.1
0.8
0~0.1
Each lead has same dimensions
FML9
Rev.A 1/4
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
Di2
Parameter Symbol
Reak reverse voltage
Average rectified forward current
orward current surge peak (60HZ, 1∞)
F
Reverse voltage (DC)
Junction temperature
Range of storage temperature
zElectrical characteristics (Ta=25°C)
Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Di2
Parameter Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
CBO
V
V
CEO
V
EBO
I
I
CP
Pc
Tj
Tstg
C
V
RM
I
I
FSM
V
Tj
Tstg
F
R
Symbol
Limits
−15
−12
−6
−1.5
−3
200
150
−40 to +125
Unit
V
V
V
A
A
mW
°C
°C
∗1
∗2
Limits
25 V
700
3
20
125
−40 to +125
BV
CEO
CBO
BV
EBO
BV
CBO
I
EBO
I
CE(sat)
V
FE
h
f
T
Cob − 12 −
V
F
I
R
Unit
mA
A
V
°C
°C
−12
−15
−6
−−
−−
−−
−−
−−
−−110
270 − 680
400
−
−
− 200
−
V
V
V
−100
−100
nA VCB=−15V
nA VEB=−6V
−200 mV
− VCE=−2V, IC=−200mA
MHz
−
pF
490− mV I
µA
FML9
IC=−1mA
C
=−10µA
I
IE=−10µA
IC=−500mA, IB=−25mA
VCE=−2V, IE=200mA, f=100MHz
CB
=−10V, IE=0mA, f=1MHz
V
F
=700mA
V
R
=20V
Rev.A 2/4
Transistors
zElectrical characteristic curves
Tr1
1000
FE
100
DC CURRENT GAIN : h
Ta=25°C
Ta=−40°C
Ta=100°C
VCE=−2V
Pulsed
10
(V)
CE(sat)
(V)
BE(sat)
0.01
1
0.1
IC/IB=20/1
CE
=−2V
V
Pulsed
Ta=25°C
Ta=100°C
Ta=100°C
Ta=−40°C
Ta=−40°C
VBE(sat)
VCE(sat)
Ta=25°C
(V)
CE(sat)
0.01
0.1
1
IC/IB=20/1
Ta=25°C
Pulsed
IC/IB=50/1
FML9
IC/IB=10/1
10
0.001 0.01 0.1 1 10
C
COLLECTOR CURRENT : I
Fig.1
DC current gain vs.
(A)
collector current
0.001
0.001 0.01 0.1 1 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
BASE SATUATION VOLTAGE : V
Fig.2
Base-emitter saturation voltage
vs. collector current
C
(A)
0.001
0.001 0.01 0.1 1 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.3
Collector-emitter saturation voltage
vs. collector current
C
(A)
10
(A)
C
1
Ta=100°C
0.1
0.01
COLLECTOR CURRENT : I
0.001
0 0.5 1 1.5
BASE TO EMITTER CURRENT : V
Fig.4
Grounded emitter propagation
Ta=25°C
Ta=−40°C
characteristics
VCE=−2V
Pulsed
BE(on)
(V)
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.001 0.01 0.1 1 10
EMITTER CURRENT : I
Fig.5
Gain bandwidth product
vs. emitter current
Ta=25°C
CE
=−2V
V
f=100MHz
E
(A)
10000
1000
100
10
SWITCHING TIME : (ns)
1
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
Fig.6 Switching time
Ta=25°C
VCE=−5V
f=100MHz
tstg
tf
tdon
tr
C
(A)
1000
100
10
1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
Fig.7
Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Cib
1 10 1000.1
Cob
Ta=25˚C
I
E
=
0mA
f=1MHz
EB
(
CB
V)
(
V)
10
(A)
C
1
0.1
COLLECTOR CURRENT : I
0.01
0.01 0.1 1 10 100
COLLECTOR TO EMITTER VOLTAGE : V
Fig.8
Safe operation area
10ms
PW=100ms
DC Operation
Ta=25°C
Single Pulsed
1ms
CE
(V)
Rev.A 3/4
Transistors
Di2
10
1
(A)
F
100m
10m
1m
FORWARD CURRENT : I
0.1m
0 0.1 0.2 0.3 0.4 0.5 0.6
°C
=125
Ta
C
°
=25
Ta
FORWARD VOLTAGE : VF (V)
Ta=−25
C
°
Fig.9 Forward characteristics
1000m
100m
(A)
R
REVERSE CURRENT : I
10m
100µ
10µ
0.1µ
Ta=125°C
1m
Ta=25°C
1µ
Ta=−25°C
010
20 30 40 50 60 70
REVERSE VOLTAGE : VR (V)
Fig.10 Reverse characteristics
FML9
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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