Transistors
Emitter common
(dual digital transistors)
EMG8 / UMG8N / FMG8A
EMG8 / UMG8N / FMG8A
!!!!
Features
1) Two DTC143Z chips in a EMT or UMT or SMT
package.
2) Mounting cost and area can be cut in half.
!!!!
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both the DTr
DTr
.
2
!!!!Equivalent circuit
EMG8 / UMG8N FMG8A
DTr
R
1
2
(2)
(3) (4) (5)
R2R
R1=4.7kΩ
R
1
2
R
2
DTr
1
(1)
(Ta = 25°C)
Limits
V
CC
IN
V
O
I
C (Max.)
I
Pd
Tj 150 ˚C
Tstg −55∼+150 ˚C
50 V
30
−5
100
100
(3) (2) (1)
R
1
R2R
DTr
2
(4)
!!!!
Absolute maximum ratings
2
(5)/(6)
R
DTr
1
1
R1=4.7kΩ
2
=47kΩ
R
Parameter Symbol
Supply voltage
Input voltage
Output current
Power
dissipation
EMG8, UMG8N 150 (TOTAL)
FMG8A 300 (TOTAL)
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
1
=47kΩ
and
Unit
V
mA
mW
!!!!
External dimensions
(Units : mm)
EMG8
(3)
(4)
0.5
1.0
1.6
(2)
0.22
0.13
0.5
(1)
(5)
1.2
1.6
0.5
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : G8
UMG8N
0.1Min.
ROHM : UMT5
EIAJ : SC-88A
0.2
0.15
)
)
3
4
(
(
)
0.65
2
(
)
6
(
1.25
2.1
0to0.1
1.3
)
0.65
1
(
0.9
0.7
Each lead has same dimensions
2.0
Abbreviated symbol : G8
FMG8A
)
)
3
2
(
(
0.3
0.15
0.3to0.6
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : G8
1
∗
2
∗
0.95
2.9
1.9
)
4
(
0.95
)
)
1
5
(
(
1.6
2.8
1.1
0.8
0to0.1
Each lead has same dimensions
Transistors
!!!!Electrical characteristics (Ta = 25°C)
Parameter Symbol
I (off)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
∗
!!!!Packaging specifications
Package
Code TR T148
Type
EMG8
UMG8N
FMG8A
Basic ordering
unit (pieces)
V
V
V
I
O (off)
G
R
R2/R
8000
I (on)
O (on)
I
I
I
f
T
1
T2R
1
Min.
Typ. Max. Unit Conditions
−
1.3
−
−
−
80
− 250 − V
3.29
8
0.1
4.7
10
0.5
−
−
−
0.3
−
1.8
−
0.5
−
−
MHz
6.11
12
CC
V
V
O
V
O
=
V
I
V
I
=
mA
CC
V
µA
V
O
−
CE
kΩ
−−
Taping
3000 3000
EMG8 / UMG8N / FMG8A
=
5V, I
O
=
100µA
=
0.3V, I
O
=5
mA
5mA, I
I
=
0.25mA
5V
=
50V, V
I
=
0V
=
5V, I
O
=10
mA
=
10mA, I
E
=
−5mA, f=100MHz
−
∗
!!!!
Electrical characteristic curves
100
50
20
(V)
I (on)
10
5
Ta=−40˚C
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
25˚C
100˚C
OUTPUT CURRENT : I
O
(A)
VO=0.3V
Fig.1 Input voltage vs. output current
(ON characteristics)
1
500m
(V)
200m
O (on)
100m
50m
20m
10m
5m
OUTPTUT VOLTAGE : V
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
Ta=100˚C
25˚C
−40˚C
OUTPUT CURRENT : I
lO/lI=20
O
(A)
Fig.4 Output voltage vs. output
current
10m
5m
2m
1m
(A)
500µ
200µ
100µ
50µ
20µ
10µ
OUTPUT CURRENT : Io
5µ
2µ
1µ
Ta=100˚C
0.5 1.0 1.5 2.0 2.5 3.00
INPUT VOLTAGE : V
25˚C
−40˚C
VCC=5V
I (off)
(V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
Ta=100˚C
I
200
100
DC CURRENT GAIN : G
25˚C
−40˚C
50
20
10
5
2
1
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : I
VO=5V
O
(A)
Fig.3 DC current gain vs. output
current