ROHM EMG4, UMG4N, FMG4A Technical data

Datasheet
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
EMG4 / UMG4N / FMG4A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
l
l
Features
1) Built-In Biasing Resistors.
2) Two DTC114T chips in one package.
3) Emitter-common type.
4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
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Inner circuit
with complete isolation to allow negative biasing
of the input. They also have the advantage of completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
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Application
Inverter circuit, Interface circuit, Driver circuit
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Packaging specifications
3,000
G4
UMG4N
UMT5
2021
TR
180
8
SMT5
2928
T148
180
8
8,000G48
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
EMG4
EMT5
1616
T2R
180
3,000
G4
FMG4A
Part No.
Package
Package
size
(mm)
Taping
code
R
1
10kW
Parameter
Tr1 and Tr2
V
CEO
50V
I
C(MAX.)
100mA
EMT5
UMT5
SMT5
EMG4
(SC-107BB)
FMG4A
(SC-74A)
UMG4N
SOT-353 (SC-88A)
(1)
(5)
(4)
(2)
(3)
(4)
Collector
Base
(3)
Emitter
(2)
(5)
Collector
Base
(1)
(2)
Collector
Base
(3)
Emitter
(4)
(1)
Collector
Base
(5)
EMG4 / UMG4N
FMG4A
(5)
(1)
(2)
(4)
(3)
(2)
(1)
(3)
(4)
(5)
1/6
2012.06 - Rev.B
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Data Sheet
EMG4 / UMG4N / FMG4A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Collector Power dissipation
Junction temperature Range of storage temperature
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
MHz
-
250
-
Transition frequency
fT
*1
V
CE
= 10V, IE = -5mA,
f = 100MHz
-710
13kW100
250
600mA--0.3V--0.5--
0.5mA5----VV
V
Collector-emitter breakdown voltage
BV
CEO
IC= 1mA
50-50
-
Collector-base breakdown voltage
BV
CBO
IC= 50mA
Unit
Min.
Typ.
Max.
Parameter
Symbol
Conditions
T
j
150
°C
T
stg
-55 to +150
°C
I
C(MAX.)
*1
100
mA
EMG4 / UMG4N
P
D
*2
150 (Total)
*3
mW
FMG4A
300 (Total)
*4
mW
V
CEO
50
V
V
EBO
5
V
Parameter
Symbol
Values
Unit
V
CBO
50
V
IE= 50mA
Collector cut-off current
I
CBO
V
CB
= 50V
Emitter cut-off current
I
EBO
V
EB
= 4V
Emitter-base breakdown voltage
BV
EBO
IC / IB= 10mA / 1mA
DC current gain
h
FE
VCE= 5V , IC= 1mA ,
Input resistance
R
1
-
Collector-emitter saturation voltage
V
CE(sat)
2/6
2012.06 - Rev.B
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMG4 / UMG4N / FMG4A
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Grounded emitter propagation characteristics
COLLECTOR CURRENT : Ic (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter output characteristics
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
Fig.3 DC Current gain vs. Collector Current
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage vs. Collector Current
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
COLLECTOR CURRENT : IC (mA)
0
20
40
60
80
100
0 5 10
250μA
0A
300μA
350μA
400μA
450μA
500μA
200μA
150μA
100μA
IB=
Ta=25ºC
50μA
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2
VCE=5V
Ta=100ºC
25
ºC
-40ºC
3/6
2012.06 - Rev.B
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMG4 / UMG4N / FMG4A
lDimensions (Unit : mm)
Dimension in mm/inches
EMT5
Patterm of terminal position areas
b
D
e
Lp
Lp
E
H
E
LL
x S A
A
c
A1
A
y
S
S
e1
b2
l1
e
MIN MAX MIN MAX
A1 0.00 0.10 0 0.004
A 0.45 0.55 0.018 0.022
b 0.17 0.27 0.007 0.011 c 0.08 0.18 0.003 0.007 D 1.50 1.70 0.059 0.067 E 1.10 1.30 0.043 0.051 e
HE 1.50 1.70 0.059 0.067
L 0.10 0.30 0.004 0.012
Lp - 0.35 - 0.014
x - 0.10 - 0.00 4
y - 0.10 - 0.004
MIN MAX MIN MAX e1 b2 - 0.37 - 0.015
l1 - 0.45 - 0.018
INCHES
0.50
0.02
DIM
MILIMETERS
MILIMETERS
INCHES
1.25
0.049
DIM
4/6
2012.06 - Rev.B
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMG4 / UMG4N / FMG4A
lDimensions (Unit : mm)
Dimension in mm/inches
UMT5
Patterm of terminal position areas
E
x S A
A
E
H
D
b
c
Q
A3
L1
Lp
y
S
A1
e1
b2
l1
A
S
e
e
MIN MAX MIN MAX
A 0.80 1.00 0.031 0.039 A1 0.00 0.10 0 0.004 A3
b 0.15 0.3 0 0.006 0.012
c 0.10 0.20 0.004 0 .008
D 1.90 2.10 0.075 0.083
E 1.15 1.35 0.045 0.053
e
HE 2.00 2.20 0.079 0.087
L1 0.20 0.50 0.008 0.02 Lp 0.25 0.55 0.01 0.022
Q 0.10 0.30 0.004 0.012
x - 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX e1 b2 - 0.40 - 0.016
l1 - 0.65 - 0.026
0.25
0.01
DIM
MILIMETERS
INCHES
1.55
0.06
DIM
MILIMETERS
INCHES
0.65
0.03
5/6
2012.06 - Rev.B
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMG4 / UMG4N / FMG4A
lDimensions (Unit : mm)
Dimension in mm/inches
SMT5
Patterm of terminal position areas
e
D
E
H
b
x S A
A
c
Q
A3
L1
Lp
A1
A
S
y
S
e1
e
l1
b2
E
MIN MAX MIN MAX
A 1.00 1.30 - 0.051 A1 0.00 0.10 0 0.004 A3
b 0.25 0.40 0.01 0.016
c 0.09 0.25 0.004 0.01
D 2.80 3.00 0.11 0.118
E 1.50 1.80 0.059 0.071
e
HE 2.60 3.00 0.102 0.1 18
L1 0.30 0.60 0.012 0.024 Lp 0.40 0.70 0.016 0.028
Q 0.20 0.30 0.008 0.0 12
x - 0.20 - 0.008
y - 0.10 - 0.004
MIN MAX MIN MAX e1 b2 0.60 - 0.024
l1 - 0.90 - 0.035
0.25
0.01
DIM
MILIMETERS
INCHES
2.10
0.08
DIM
MILIMETERS
INCHES
0.95
0.04
6/6
2012.06 - Rev.B
Notes
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The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specications, which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
The Products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes effor ts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injur y, re or any other damage caused in the event of the failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
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Notice
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