ROHM EMG4, UMG4N, FMG4A Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

EMG4 / UMG4N / FMG4A

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

1) Built-In Biasing Resistors.

2) Two DTC114T chips in one package.

3) Emitter-common type.

4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

5) The bias resistors consist of thin-film resistors

l

Inner circuit

with complete isolation to allow negative biasing

of the input. They also have the advantage of
completely eliminating parasitic effects.

6) Only the on/off conditions need to be set for
operation, making the circuit design easy.

7) Lead Free/RoHS Compliant.

l

Application

Inverter circuit, Interface circuit, Driver circuit

l

Packaging specifications

3,000

G4

UMG4N

UMT5

2021

TR

180

8

SMT5

2928

T148

180

8

8,000G48

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

EMG4

EMT5

1616

T2R

180

3,000

G4

FMG4A

Part No.

Package

Package

size

(mm)

Taping

code

R

1

10kW

Parameter

Tr1 and Tr2

V

CEO

50V

I

C(MAX.)

100mA

EMT5

UMT5

SMT5

EMG4

(SC-107BB)

FMG4A

(SC-74A)

UMG4N

SOT-353 (SC-88A)

(1)

(5)

(4)

(2)

(3)

(4)

Collector

Base

(3)

Emitter

(2)

(5)

Collector

Base

(1)

(2)

Collector

Base

(3)

Emitter

(4)

(1)

Collector

Base

(5)

EMG4 / UMG4N

FMG4A

(5)

(1)

(2)

(4)

(3)

(2)

(1)

(3)

(4)

(5)

1/6

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMG4 / UMG4N / FMG4A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

MHz

-

250

-

Transition frequency

fT

*1

V

CE

= 10V, IE = -5mA,

f = 100MHz

-710

13kW100

250

600mA--0.3V--0.5--

0.5mA5----VV

V

Collector-emitter breakdown voltage

BV

CEO

IC= 1mA

50-50

-

Collector-base breakdown voltage

BV

CBO

IC= 50mA

Unit

Min.

Typ.

Max.

Parameter

Symbol

Conditions

T

j

150

°C

T

stg

-55 to +150

°C

I

C(MAX.)

*1

100

mA

EMG4 / UMG4N

P

D

*2

150 (Total)

*3

mW

FMG4A

300 (Total)

*4

mW

V

CEO

50

V

V

EBO

5

V

Parameter

Symbol

Values

Unit

V

CBO

50

V

IE= 50mA

Collector cut-off current

I

CBO

V

CB

= 50V

Emitter cut-off current

I

EBO

V

EB

= 4V

Emitter-base breakdown voltage

BV

EBO

IC / IB= 10mA / 1mA

DC current gain

h

FE

VCE= 5V , IC= 1mA ,

Input resistance

R

1

-

Collector-emitter saturation voltage

V

CE(sat)

2/6

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMG4 / UMG4N / FMG4A

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Grounded emitter propagation
characteristics

COLLECTOR CURRENT : Ic (mA)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter output
characteristics

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER

VOLTAGE : VCE (V)

Fig.3 DC Current gain
vs. Collector Current

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-emitter saturation voltage
vs. Collector Current

COLLECTOR SATURATION

VOLTAGE : V

CE

(sat) (V)

COLLECTOR CURRENT : IC (mA)

0

20

40

60

80

100

0 5 10

250μA

0A

300μA

350μA

400μA

450μA

500μA

200μA

150μA

100μA

IB=

Ta=25ºC

50μA

0.001

0.01

0.1

1

10

0 0.5 1 1.5 2

VCE=5V

Ta=100ºC

25

ºC

-40ºC

3/6

2012.06 - Rev.B