ROHM EMG3, FMG3A, UMG3N Schematic [ru]
EMG3 / UMG3N / FMG3A
Transistors
Emitter common
(dual digital transistors)
EMG3 / UMG3N / FMG3A
zFeatures
1) Two DTC143T chips in a EMT or UMT or SMT
package.
2) Mounting cost and area can be cut in half.
zStructure
Dual NPN digital transistor
(each with a single built in resistors)
The following characteristics apply to both the DTr
DTr
2.
zEquivalent circuit
EMG3 / UMG3N FMG3A
DTr
R
1
2
(2)
(3) (4) (5)
(1)
R
DTr
(3) (2) (1)
R
1
DTr
2
(4)
R1=4.7kΩ
R
1
DTr
1
(5)
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
V
Collector current
Collector
power
dissipation
EMG3, UMG3N 150 (TOTAL)
FMG3A 300 (TOTAL)
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
Tstg −55 to +150 ˚C
CBO
CEO
EBO
C
I
C
P
Tj 150 ˚C
Limits
50 V
50
5
1 and
R1=4.7kΩ
1
1
Unit
V
V
mA100
mW
zExternal dimensions (Unit : mm)
EMG3
(4)
0.22
(5)
1.2
1.6
0.13
ROHM : EMT5
Abbreviated symbol : G3
UMG3N
)
4
(
0.2
)
5
(
1.25
2.1
0.15
0.1Min.
0to0.1
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : G3
1
∗
2
∗
FMG3A
0.3
0.15
0.3to0.6
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : G3
)
2
(
)
1
(
1.6
2.8
0to0.1
(3)
0.5
1.0
1.6
(2)
0.5
(1)
0.5
Each lead has same dimensions
)
3
(
)
0.65
2
(
1.3
0.95
0.95
0.65
0.7
1.9
0.8
2.0
0.9
2.9
1.1
)
1
(
Each lead has same dimensions
)
3
(
)
4
(
)
5
(
Each lead has same dimensions
Rev.A 1/2
EMG3 / UMG3N / FMG3A
Transistors
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Transition frequency of the transistor
∗
zPackaging specifications
Package
Code TR T148
Basic ordering
Type
unit (pieces)
EMG3
UMG3N
FMG3A
zElectrical characteristic curves
1k
500
200
100
50
20
10
5
DC CURRENT GAIN : hFE
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC
Fig.1 DC current gain vs. collector
current
VCE=
(A)
5V
T2R
8000
BV
BV
BV
I
CBO
I
EBO
V
CE (sat)
h
FE
f
R
Min.
Typ. Max. Unit Conditions
CBO
CEO
EBO
T
1
−
50
−
50
−
5
−
−
−
−
−
−
100
250
− 250 −
3.29
4.7
−
−
−
0.5
0.5
0.3
600
6.11
µA
µA
MHz
kΩ
Taping
3000 3000
1
V)
(
500m
CE (sat)
200m
100m
50m
20m
10m
5m
2m
1m
100µ200µ500µ1m 2m 5m 10m 20m 50m 100m
COLLECTOR SATURATION VOLTAGE : V
Ta=100˚C
−40˚C
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation
voltage vs. collector current
VI
C
=
C
=
V
I
E
=
I
V
CB
V
EB
V
C/IB
V
I
V
CE
−
V
CE
25˚C
50µA
1mA
50µA
=
50V
=
4V
=
5mA/0.25mA
=
5V, I
C
=
=
10V, I
E
lC/lB=20
C
(A)
1mA
=
−5mA, f=100MHz
−
∗
Rev.A 2/2
Loading...