ROHM FMA9N, UMA9N Schematic [ru]

UMA9N / FMA9A

1
2

Transistors

Digital transistor
(Common Emitter Dual Transistors)

UMA9N / FMA9N

zFeatures

1) Two DT A114E chips in UMT and
SMT packages.

2) Mounting cost and area can be
cut in half.

zStructure

Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)

The following characteristics apply
to both DTr

1

and DTr2.

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Supply voltage

Input voltage

Output current

Power
dissipation

UMA9N 150 (TOTAL)

FMA9A 300 (TOTAL)
Junction temperature
Storage temperature

∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.

Rev.A 1/2

zExternal dimensions (Unit : mm)

UMA9N FMA9A

2.0±0.2

1.3±0.1

0.65

0.65

(2)

(3)

(1)

0.1

0.1

±

±

2.1

1.25

(6)

(4)

+0.1

0.2

−0.05

All terminals have same
dimensions.

ROHM : UMT5
EIAJ : SC-88A

(3) (2) (1)

R

1

R

2

DTr

2

(4)

Limits

V

V

I

I

C (MAX.)

CC

IN

O

−50 V

−40

10

−50

−100

Pd

Tj 150 °C

Tstg −55 to +150 °C

R

2

(6)

0.15±0.05

R

1

DTr

1

R1 = 10kΩ

2

= 10kΩ

R

0.9±0.1

0.7

0~0.1

0.1Min.

Abbreviated symbol: A9

Unit

V

mA

∗

mW

∗

2.9±0.2

1.9±0.2

0.95 0.95

(3)

(2)

+0.1

0.3

−0.05

All terminals have same
dimensions.

ROHM : SMT5
EIAJ : SC-74A

(4)

(5)

(1)

R

DTr

−0.1

+0.2

1.6

(3) (4) (5)

1

R2R

2

(2)

2.8±0.2

0.15

2

(1)

1.1

+0.1

−0.06

R

DTr

+0.2

−0.1

0.8±0.1

1

1

R

1
2

R

0~0.1

0.3~0.6

= 10kΩ
= 10kΩ

Transistors

m

3

e

m

m

zElectrical characteristics (Ta=25°C)

Parameter Symbol

I (off)

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency

Input resistance
Resistance ratio

∗

Transition frequency of the device

V
V

I (on)

V

O (on)

I

I

O (off)

G

f

R

R2/R

I

I

T

1

1

zPackaging specifications

Packaging type Taping
Code

Part No.

Basic ordering unit (pieces)
UMA9N
FMA9A

zElectrical characteristic curves

−100

−50

−20

(V)

I (on)

−10

Ta=−40°C

−5

25°C

100°C

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−100µ

−1m −10m −100

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

−1

−500m

(V)

−200m

−100m

−50m

−20m

−10m

−5m

OUTPUT VOLTAGE : VO (on)

−2m

−1m

−100µ

−1m −10m −100

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : IO

Ta=100°C

25°C

−40°C

VO=−0.3V

O

(A)

lO/lI=20

(A)

Min.

Typ. Max. Unit Conditions

−0.5

−

−

−3.0

−

−

−

−

−

−

30

−

− 250 −

10

7

0.8

1

TR

3000

−0.3−0.1

−

−0.5

T148
3000

−

0.88

−

13

1.2

mA

MHz

CC

=

V

V

O

=

V
I

O/II

I

=

V

CC

V
I

O

=

V

CE

=

−5V

=

−5mA, V

=

V

µA

−

kΩ

−−

−

−

−10m

−5m

−2m

Ta=100°C

A)

−1m

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

OUTPUT CURRENT : Io (

−5µ

−2µ

−1µ

0 −

VCC=−5V

25°C

−40°C

−0.5 −1 −1.5 −2 −2.5

INPUT VOLTAGE : V

I (off)

(V)

Fig.2 Output current vs. input voltag

(OFF characteristics)

−5V, I

O

=

−100µA

−0.3V, I

O

=

−10mA

−10mA / −0.5mA

−50V, V

I

=

0V

O

=

−5V

−10V, I

E

=

5mA, f=100MHZ

−

1k

500

I

200
100

50

20
10

5

DC CURRENT GAIN : G

2
1

−100µ−1m −10m −100

Fig.3 DC current gain vs. output

UMA9N / FMA9A

∗

VO=−5V

Ta=100°C

25°C

−40°C

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

current

O (A)

Fig.4 Output voltage vs. output

current

Rev.A 2/2