ROHM EMA3, UMA3N, FMA3A Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

EMA3 / UMA3N / FMA3A

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

1) Built-In Biasing Resistors.

2) Two DTA143T chips in one package.

3) Emitter-common type.

4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

5) The bias resistors consist of thin-film resistors

l

Inner circuit

with complete isolation to allow negative biasing

of the input. They also have the advantage of
completely eliminating parasitic effects.

6) Only the on/off conditions need to be set for
operation, making the circuit design easy.

7) Lead Free/RoHS Compliant.

l

Application

Interface circuit, Driver circuit

l

Packaging specifications

R

1

4.7kW

Parameter

Tr1 and Tr2

V

CEO

-50V

I

C(MAX.)

-100mA

EMT5

UMT5

SMT5

Part No.

Package

Package

size

(mm)

Taping

code

A3

8

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

EMA3

EMT5

1616

T2R

180

3,000

A3

FMA3A

3,000

A3

UMA3N

UMT5

2021

TR

180

8

SMT5

2928

T148

180

8

8,000

EMA3

(SC-107BB)

FMA3A

(SC-74A)

UMA3N

SOT-353 (SC-88A)

(1)

(5)

(4)

(2)

(3)

(4)

Collector

Base

(3)

Emitter

(2)

(5)

Collector

Base

(1)

EMA3 / UMA3N

FMA3A

(2)

Collector

Base

(3)

Emitter

(4)

(1)

Collector

Base

(5)

(2)

(1)

(3)

(4)

(5)

(5)

(1)

(2)

(4)

(3)

1/6

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMA3 / UMA3N / FMA3A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector Power dissipation EMA3 / UMA3N

FMA3A

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

Parameter

Symbol

Values

Unit

V

CBO

-50

V

I

C(MAX.)

*1

-100

mA

V

CEO

-50

V

V

EBO

-5

V

T

j

150

°C

T

stg

-55 to +150

°C

Unit

Collector-base breakdown voltage

BV

CBO

IC= -50mA

-50

--V

Parameter

Symbol

Conditions

Min.

Typ.

Max.

V

Emitter-base breakdown voltage

BV

EBO

IE= -50mA

-5

--V

Collector-emitter breakdown voltage

BV

CEO

IC= -1mA

-50

-

-

mA

Emitter cut-off current

I

EBO

V

EB

= -4V

-

-

-0.5

mA

Collector cut-off current

I

CBO

V

CB

= -50V

-

-

-0.5

V

DC current gain

h

FE

VCE= -5V , IC= -1mA ,

100

250

600

-

Collector-emitter saturation voltage

V

CE(sat)

IC / IB= -5mA / -0.25mA

-

-

-0.3

kW

Transition frequency

fT

*1

V

CE

= -10V, IE = 5mA,

f = 100MHz

-

250

-

MHz

Input resistance

R

1

-

3.29

4.7

6.11

P

C

*2

150 (Total)

*3

300 (Total)

*4

mW

mW

2/6

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMA3 / UMA3N / FMA3A

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Grounded emitter propagation
characteristics

COLLECTOR CURRENT : Ic (mA)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter output
characteristics

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER

VOLTAGE : VCE (V)

Fig.3 DC Current gain
vs. Collector Current

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-emitter saturation voltage
vs. Collector Current

COLLECTOR SATURATION

VOLTAGE : V

CE

(sat) (V)

COLLECTOR CURRENT : IC (mA)

0

-20

-40

-60

-80

-100

0 -2 -4 -6 -8 -10

-250μA

0A

-300μA

-350μA

-400μA

-450μA

-500μA

-200μA

-100μA

IB=

-150μA

-50μA

Ta=25ºC

-0.001

-0.01

-0.1

-1

-10

0 -0.5 -1 -1.5 -2

VCE= -5V

Ta=100ºC

25

ºC

-40ºC

3/6

2012.06 - Rev.B