ROHM FMA11 Datasheet

EMA11 / UMA11N / FMA11A

Transistors

Emitter common (dual digital transistors)

EMA11 / UMA11N / FMA11A

!!!!

Features

1) Two DTA143Z chips in a EMT or UMT or SMT
package.

2) Mounting cost and area can be cut in half.

!!!!Structure

Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)

The following characteristics apply to both DTr

1

and DTr2.

!!!!Equivalent circuit

R

1

R

1

DTr

1

DTr

2

(3) (4) (5)

(2)

(1)

R

1

R

1

DTr

1

DTr

2

(3) (2) (1)

(4)

(5)

R1=4.7kΩ
R2=47kΩ

R1=4.7kΩ
R2=47kΩ

R

2R2

R

2R2

EMA11 / UMA11N FMA11A

!!!!

Packaging specifications

Taping

UMA11N

EMA11

Type

FMA11A

TRT2R

30008000

−

−

−

T148
3000

−

−

−

Package
Code
Basic ordering unit (pieces)

!!!!

External dimensions

(Units : mm)

ROHM : UMT5
EIAJ : SC-88A

ROHM : SMT5
EIAJ : SC-74A

EMA11 / UMA11N

FMA11A

Abbreviated symbol: A11

Abbreviated symbol: A11

All terminals have same dimensions

All terminals have same dimensions

0.9

0.15

0to0.1

0.1Min.

0.7

2.1

1.3

0.65

2.0

(

4

)

(

1

)

(

5

)

0.2

1.25

(

2

)

0.65

(

3

)

0to0.1

1.1

0.8

0.3to0.6

0.15

1.6

2.8

2.9

0.95

1.9

(

4

)

(

5

)

(

1

)

0.3

(

3

)

0.95

(

2

)

!!!!Absolute maximum ratings (Ta = 25°C)

∗

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

Supply voltage

Input voltage

Output current

Power
dissipation

Junction temperature
Storage temperature

Parameter Symbol

Limits

Unit

V

CC

−50 V

V

IN

−30
V

5

I

O

−100
mA

I

C (Max.)

−100

Tj 150 °C

Tstg −55~+150 °C

Pd

EMA11 / UMA11N 150 (TOTAL)

mW

FMA11A 300 (TOTAL)

∗

1

∗

2

EMA11 / UMA11N / FMA11A

Transistors

!!!!Electrical characteristics (Ta = 25°C)

Parameter Symbol

V

I (off)

V

I (on)

V

O (on)

I

I

I

O (off)

R

1

G

I

R2/R

1

Min.

−

−1.3

−

−

−

3.29

80

8

−

−

−0.1

−

−

4.7

−

10

−0.5

−

−0.3

−1.8

−0.5

6.11

−

12

V

V

CC

=−5V, IO=−100µA

V

O

=−0.3V, IO=−5mA

I

O/II

=−5mA/−0.25mA

V

I

=−5V

V

CC

=−50V, VI=0V

−

V

O

=−5V, IO=−10mA

V

mA

µA

kΩ

−

−−

Typ. Max. Unit Conditions

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗

Transition frequency of the device

−f

T

250 − VCE=10mA, IE=−5mA, f=100MHz

∗

MHz

!Electrical characteristic curves

INPUT VOLTAGE : V

I (on)

(V)

OUTPUT CURRENT : I

O

(A)

−200m

−100m

−100µ−1m −10m −100m−200µ−2m −20m−500µ−5m −50m

VO=−0.3V

−100

−50

−20

−10

−5

−2

−1

−500m

Fig.1 Input voltage vs. output current

(ON characteristics)

25°C

100°C

Ta=−40°C

VCC=−5V

0 −3

−10m

−1µ

−2m

−5m

−1m

−200µ

−500µ

−100µ

−20µ

−50µ

−10µ

−2µ

−5µ

−0.5 −1 −1.5 −2 −2.5

INPUT VOLTAGE : V

I (off)

(V)

OUTPUT CURRENT : Io (A)

Fig.2 Output current vs. input voltage

(OFF characteristics)

Ta=100°C

25°C

−40°C

VO=−5V

−100µ−1m −10m −100m−200µ−2m −20m−500µ−5m −50m

DC CURRENT GAIN : G

I

OUTPUT CURRENT : IO (A)

1k

500

200

100

50

20
10

5

2
1

Fig.3 DC current gain vs. output
current

Ta=100°C

25°C

−40°C

lO/lI=20

−100µ

−1m −10m −100m

−200µ−2m −20m−500µ−5m −50m

−1

−500m

−200m

−100m

−10m

−50m

−5m

−20m

−2m

−1m

OUTPUT CURRENT : IO (A)

OUTPUT VOLTAGE : V

O (on)

(V)

Fig.4 Output voltage vs. output
current

Ta=100°C

25°C

−40°C