ROHM EMZ7 Datasheet

Transistors

General purpose transistor
(dual transistors)

EMZ7 / UMZ7N

EMZ7 / UMZ7N

!!!!

Features

1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or
UMT package.

2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.

3) Transistor elements are independent, eliminating

interference.

4) Mounting cost and area can be cut in half.

5) Low V

!!!!

CE(sat)

Structure

NPN / PNP epitaxial planar silicon transistor

!!!!

Equivalent Circuit

EMZ7 / UMZ7N

(3)

(2) (1)

Tr

Tr

2

1

(4) (5) (6)

!!!!

External dimensions

EMZ7

(3)

(4)

(2)(5)

0.22

(1)

(6)

1.2

1.6

0.13

Each lead has same dimensions

ROHM : EMT6

Abbreviated symbol : Z7

(Units : mm)

0.5

1.0

1.6

0.5

0.5

UMZ7N

)

4

(

)

5

(

0.2

)

6

(

1.25

2.1

0.15

0.1Min.

0to0.1

ROHM : UMT6
EIAJ : SC-88

Abbreviated symbol : Z7

)

3

(

0.65

)

2

(

1.3

0.65

0.7

2.0

0.9

)

1

(

Each lead has same dimensions

!!!! Absolute maximum ratings (Ta = 25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

V

CBO

CEO

V
V

EBO

I

P

Tj

Tstg

C

C

Limits

1

Tr
15
12

150(TOTAL)

150

−55∼+150

−500500

−15

−12

−66

Tr

2

Unit

V
V
V

mA

mW

1

∗

°C
°C

Transistors

!!!! Electrical characteristics (Ta = 25°C)

(NPN)

Tr1

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

Tr2 (PNP)

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

BV
BV
BV

I

CBO

I

EBO

V

CE(sat)

h

f

Cob

Symbol

BV
BV
BV

I

CBO

I

EBO

V

CE

h

f

Cob

CBO

CEO

EBO

FE

T

CBO

CEO

EBO

(sat)

FE

T

Min.

Typ. Max. Unit Conditions
15
12

6

−

−

−

270

−

−

Min.

−15

−12

−6

−

−

−

270

−

−

−

−

−

−

−

90

−

320

7.5

Typ.

−

−

−

−

−

−100

−

260

6.5

Max.

−250

−

−

−

0.1

0.1
250
680

−

−

−

−

−

−0.1

−0.1

680

−

−

VI
V
V

µA
µA

mV

−

MHz

pF

Unit

V
V
V

µA
µA

mV

−

MHz

pF

C=

C=

I

E=

I
V
V

C/IB=

I
V
V
V

I
I
I
V
V
I
V
V
V

10µA
1mA
10µA

CB=

EB=

CE/IC=

CE=

CB=

C=

−10µA

C=

−1mA

E=

−10µA

CB=

EB=

C/IB=

CE/IC=

CE=

CB=

EMZ7 / UMZ7N

15V
6V

200mA/10mA

2V/10mA
2V, IC=−10mA, f=100MHz
10V, IE=0A, f=1MHz

Conditions

−15V

−6V

−200mA/−10mA

−2V/−10mA

−2V, IC=10mA, f=100MHz

−10V, IE=0A, f=1MHz

!!!!Packaging specifications

Packaging type
Code

Part No.
UMZ7N
EMZ7

!!!!

Electrical characteristic curves

(NPN)

Tr1

1000

500

(mA)

C

200
100

50

20
10

5

COLLECTOR CURRENT : I

2
1

Basic ordering unit (pieces)

C

C

C

°

°

°

25

25

40

1

−

Ta =

0

0.5 1.0 1.5

BASE TO EMITTER VOLTAGE : VBE(V)

Fig.1 Grounded emitter propagation

characteristics

VCE=2V

Taping

TR

3000

−

1000

500

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

1 2 5 10 20 50 100 200 500

T2R

8000

−

Ta=125°C

25°C

−40°C

COLLECTOR CURRENT : IC(mA)

VCE=2V

Fig.2 DC current gain vs.

collector current

1000

1000

(mV)

500

(sat)

CE

200
100

50

Ta=1

25°C

20
10

5

2
1

COLLECTOR SATURATION VOLTAGE : V

25°C

−40°C

1 2 5 10 20 50 100 200 5001000

COLLECTOR CURRENT : IC(mA)

Fig.3 Collector-emitter saturation voltage

vs. collector current ( Ι )

IC/IB=20