Transistors
z
!
z
z
z
z
General purpose transistor
(dual transistors)
EMZ7/UMZ7N
z
Features
1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or
UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
5) Low V
CE(sat)
Structure
NPN / PNP epitaxial planar silicon transistor
External dimensions (Unit : mm)
EMZ7
(4)
0.22
(6)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol
EMZ7/UMZ7N
UMZ7N
)
)
3
4
(
(3)
0.5
1.0
1.6
(2)(5)
0.5
(1)
1.2
1.6
0.5
: Z7
(
)
5
(
0.2
)
6
(
1.25
0.15
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol
0.65
)
2
(
1.3
0.65
0.7
2.0
0.9
: Z7
)
1
(
2.1
Each lead has same dimensions
0to0.1
Equivalent Circuit
EMZ7 / UMZ7N
(3)
(2) (1)
Tr
Tr
2
(4) (5) (6)
z
Absolute maximum ratings (Ta=25qC)
1
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
Tr
1
V
CBO
V
CEO
EBO
V
I
C
I
CP
P
C
15
12
6
500
1
150(TOTAL)
Tj 150
Tstg
−55 to +150
Limits
Tr
−15
−12
−6
−500
−1
2
Unit
V
V
V
mA
A
1
mW
∗
°C
°C
Rev.A 1/4
Transistors
z
z
Electrical characteristics (Ta=25qC)
Tr
1 (NPN)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Tr
2 (PNP)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE
(sat)
h
FE
f
T
Cob
Min.
Typ. Max. Unit Conditions
15
12
6
−
−
−
270
−
−
Min.
−15
−12
−6
−
−
−
270
−
−
−
−
−
−
−
90
−
320
7.5
Typ.
−
−
−
−
−
−100
−
260
6.5
0.1
0.1
250
680
Max.
−0.1
−0.1
−250
680
−
−
−
−
−
−
−
−
−
−
VI
V
I
V
I
μA
V
μA
V
I
mV
−
V
V
MHz
V
pF
Unit
V
V
V
μA
μA
mV
−
MHz
pF
C=
C=
E=
C
I
I
I
V
V
I
V
V
V
CB=
EB=
/I
CE
CE=
CB=
C
=
C
=
E
=
CB
EB
C/IB
CE/IC
CE
CB
10μA
1mA
10μA
B=
/I
EMZ7/UMZ7N
15V
6V
200mA /10mA
C=
2V/10mA
2V, I
C=
−10mA, f
10V, I
E=
0A, f
Conditions
−10μA
−1mA
−10μA
=
−15V
=
−6V
=
−200mA/−10mA
=
−2V/−10mA
=
−2V, I
C
=
10mA, f=100MHz
=
−10V, I
E
=
=
100MHz
=
1MHz
0A, f=1MHz
z
Packaging specifications
Packaging type
Code
Part No.
Basic ordering unit (pieces)
UMZ7N
EMZ7
TR
3000
−
Taping
T2R
8000
−
Rev.A 2/4
Transistors
z
Electrical characteristic curves
Tr
1(NPN)
1000
500
(mA)
C
200
100
50
20
10
5
COLLECTOR CURRENT : I
2
1
0
Fig.1 Grounded emitter propagation
C
C
C
°
°
°
25
25
40
1
−
Ta =
0.5 1.0 1.5
BASE TO EMITTER VOLTAGE : VBE(V)
characteristics
VCE=2V
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
1 2 5 10 20 50 100 200 500
Ta=125°C
25°C
−40°C
COLLECTOR CURRENT : IC(mA)
Fig.2 DC current gain vs.
collector current
VCE=2V
EMZ7/UMZ7N
1000
(mV)
500
(sat)
CE
200
100
50
Ta=1
25°C
20
10
5
2
1000
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR SATURATION VOLTAGE : V
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
25°C
−40°C
COLLECTOR CURRENT : IC(mA)
IC/IB=20
V)
1000
(
(sat)
500
CE
200
100
50
IC/I
B
=
50
20
10
20
10
5
2
1
COLLECTOR SATURATION VOLTAGE : V
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Ta=25°C
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
1000
500
200
100
50
20
10
5
2
1
EMITTER INPUT CAPACITANCE : Cib (pF)
0.20.1 0.5 1 2 5 10 20 50 100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Cib
Cob
I
E=
0A
f
=
1MHz
Ta=25°C
10000
5000
(mV)
(sat)
2000
BE
1000
500
200
100
50
20
BASE SATURATION VOLTAGE : V
10
1 2 5 10 20 50 100 200 5001000
Ta=−40°C
25°C
125°C
COLLECTOR CURRENT : IC(mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
IC/I
B
=
20
1000
500
V
CE=
2V
Ta=25˚C
Pulsed
200
100
50
fT (MHZ)
20
10
5
2
1
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6
Collector output capacitance
Emitter input capacitance
215
102050
5001000
100 200
vs. base voltage
Rev.A 3/4
Transistors
Tr
2 (PNP)
EMZ7/UMZ7N
1000
500
(mA)
200
C
100
50
20
10
5
COLLECTOR CURRENT : I
2
1
0
Ta=125˚C
Ta=25˚C
0.5
BASE TO EMITTER VOLTAGE : V
Ta= -40˚C
V
CE
=
2V
BE
(V)
Fig.8 Grounded emitter propagation
characteristics
1000
(mV)
500
(sat)
CE
200
100
50
IC / IB=50
IC / IB=20
20
IC / IB=10
10
5
2
1
1 2 5 10 20 50 100 200 1000
COLLECTOR CURRENT : IC(mA)
COLLECTOR SATURATION VOLTAGE : V
Ta=25°C
500
Fig.11 Collector-emitter saturation voltage
vs. collector current
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1.51.0
1
Ta=125°C
Ta=25°C
1 2 5 10 20 50 100 200 1000
COLLECTOR CURRENT : IC(mA)
Fig.9 DC current gain vs.
collector current
10000
5000
(mV)
(sat)
2000
BE
1000
500
200
100
50
20
10
1 2 5 10 20 50 100 200 1000
BASER SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC(mA)
Fig.12 Base-emitter saturation voltage
vs. collector current
Ta= −40°C
Ta=25°C
Ta=125°C
Ta= −40°C
VCE=2V
IC/IB=20
500
1000
(V)
500
(sat)
CE
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 1000
COLLECTOR SATURATION VOLTAGE : V
Ta=25°C
COLLECTOR CURRENT : IC(mA)
Fig.10 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
500
(MHz)
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1
500
1 2 5 10 20 50 100 200 1000
EMITTER CURRENT : IC(mA)
Fig.13 Gain bandwidth product vs.
emitter current
Ta=125°C
Ta= −40°C
IC/IB=20
500
VCE=2V
Ta=25°C
500
1000
500
200
100
50
20
10
5
2
EMITTER INPUT CAPACITANCE : Cib(F)
1
0.2 0.5 1 2 5 10 20 50 1000.1
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER TO BASE VOLTAGE : V
Cib
Cob
IE=
0A
f=1MHz
Ta=25°C
EB
Fig.14 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
(
V)
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commer c i a l l y
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this documentare designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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