ROHM EMZ6.8N Schematic [ru]
EMZ6.8N
Diodes
Zener diode
EMZ6.8N
zApplications zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)
Voltage regulation
0.7
0.7
1.75±0.1
3.5±0.05
0～0.1
1.0
0.5
0.5
0.7
0.6 0.6
8.0±0.2
1.3
0.3±0.1
0.9±0.2
(Common anode dual chips)
zFeatures
1.6±0.2
0.3±0.1
0.05
(3)
0.15±0.05
1) Ultra small mold type. (EMD3)
2) High reliability
zConstruction
0.2±0.1
-0.05
(2)
0.5
1.0±0.1
0.5
1.6±0.2
0.8±0.1
(1)
0.55±0.1
0.7±0.1
0～0.1
EMD3
0.1Min
Silicon epitaxial planar zStructure
ROH M : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
zT aping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0 .1
0
1.8±0.2
5.5±0.2
1.8±0.1
φ0.5±0.1
zAbsolute maximum ratings (Ta=25°C)
LimitsParame ter
150
150
-55 to +150
W
℃
℃
Power dissipation（*1
Junction temperatur e
torage temperature
S
*1) T otal of 2 elements
(
Sym bol Unit
）
Pm
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Zener volt age V
everse current I
R
ynamic impedance Z
D
Param eter
Sym bol Min. Typ. Max. Unit Conditions
6.47 - 7.14 V
Z
R
Z
- - 0.50 µA
--40
I
=5mA
Z
V
=3.5V
R
I
Ω
=5mA
Z
Rev.B 1/2
Diodes
zElectrical characteristic curves (Ta=25°C)
10
1
Ta=25℃
Ta=-25℃
0.1
ZENER CURRENT:Iz(mA)
0.01
6 6.5 7 7.5 8
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
Ta=75℃
Ta=125℃
Ta=150℃
100
0.01
0.001
REVERSE CURRENT:IR (nA)
0.0001
0.00001
10
1
0.1
Ta=125℃Ta=150℃
Ta=75℃
01234
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Ta=25℃
Ta=-25℃
100
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
EMZ6.8N
f=1MHz
10
1
0123456
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
7.2
7.1
7
6.9
ZENER VOLTAGE:Vz(Ｖ)
6.8
6.7
100
10
DYNAMIC IMPEDANCE:Zz(Ω)
1
0.1 1 10
AVE:6.954V
Vz DISRESION MAP
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
Ta=25℃I
Z=5mA
n=30pcs
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
REVERSE CURRENT:IR(nA)
0.01
0
1000
100
TRANSIENT
10
THAERMAL IMPEDANCE:Rth (℃/W)
1
0.001 0.01 0.1 1 10 100 1000
AVE:0.0143nA
IR DISRESION MAP
Mounted on epoxy board
TIME:t(s)
Rth-t CHARACTERISTICS
IM=1mA IF=100mA
1ms
300us
Ta=25℃
VR=3.5V
n=30pcs
Rth(j-a)
time
Rth(j-c)
20
19.5
19
18.5
18
17.5
17
CAPACITANCE
16.5
16
BETWEENTERMINALS:Ct(pF)
15.5
15
AVE:19.06pF
Ct DISRESION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
Rev.B 2/2
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