ROHM EMZ2, UMZ2N, IMZ2A Technical data

EMZ2 / UMZ2N / IMZ2A

Transistors

Power management (dual transistors)

EMZ2 / UMZ2N / IMZ2A

zFeature

1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.

zEquivalent circuit s

EMZ2 / UMZ2N

(3) (2) (1)

Tr

2

Tr

IMZ2A

(4) (5) (6)

Tr

1

2

Tr

1

zExternal dimensions (Unit : mm)

EMZ2

(3)

(4)

0.5

(2)(5)

0.22

0.13

ROHM : EMT6

0.5

(1)

(6)

1.2

1.6

Each lead has same dimensions

1.0

1.6

0.5

(4) (5) (6)

(3) (2) (1)

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power

dissipation
Junction temperature

Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

EMZ2, UMZ2N
IMZ2A

V
V
V

Tstg

CBO
CEO
EBO

I

C

P

C

Tj

Limits

1Tr2

Tr

−60 60

−50 50 V

−67

−150 150

150 (TOTAL)
300 (TOTAL)

150

−55 to +150

Unit

mW

V

V

mA

°C
°C

zPackage, marking, and packaging specifications

Part No. UMZ2N
Package

Marking

Code

Basic ordering unit (pieces)

EMZ2
EMT6

Z2

T2R

8000

UMT6

Z2

TR

3000

IMZ2A

SMT6

Z2
T108
3000

UMZ2N

0.2

0.15

0.1Min.

ROHM : UMT6

1

∗

2

∗

EIAJ : SC-88

IMZ2A

0.3

0.15

0.3to0.6

ROHM : SMT6
EIAJ : SC-74

)

)

3

4

(

(

)

5

(

)

6

(

)

6

(
)

5

(

)

4

(

0.65

)

2

(

)

1

(

0.65

1.25

2.1

0.7

0to0.1

Each lead has same dimensions

)

1

(

0.95

)

1.9

2

(

0.95

)

3

(

1.6

2.8

0.8

0to0.1

Each lead has same dimensions

1.3

2.0

2.9

1.1

Rev.A 1/4

EMZ2 / UMZ2N / IMZ2A

Transistors

zElectrical characteristics (Ta=25°C)

Tr1 (PNP)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance

Transition frequency of the device.

∗

2

Tr

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance

∗

zElectrical characteristics curves

PNP Tr

mA)

COLLECTOR CURRENT : Ic (

Fig.1 Grounded emitter propagation

Parameter Symbol Min. Typ. Max. Unit Conditions

transfer ratio

(NPN)

Parameter Symbol Min. Typ. Max. Unit Conditions

transfer ratio

Transition frequency of the device.

−50

Ta=100˚C

25˚C

−20

−40˚C

−10

−5

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE
T

f

Cob

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE
T

f

Cob

VCE= −6V

−60 −− VIC = −50µA

−

−50

−

−6

−

−

−

−

−

−

−

120

−−1404−5MHzpFV

60 −−VIC = 50µA

−

50

−

7

−

−

−

−

−

−

−

120

−−1802−

−10

Ta=25˚C

−8

mA)

(

C

V

−

V

−

µA

−0.1
µA

−0.1

V

−0.5

−

560

V

−

V

−

µA

0.1
µA

0.1

V

0.4

−

560

MHzpFVCE = 12V , IE = −2mA , f = 100MHz

3.5

−6

−2

−1

−0.5

−0.2

−0.1

−0.2

−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6

BASE TO EMITTER VOLTAGE : VBE (

V)

−4

−2

COLLECTOR CURRENT : I

−0.8 −1.6 −2.0

−0.4

COLLECTOR TO MITTER VOLTAGE : VCE (

Fig.2 Grounded emitter output

characteristics

characteristics (I)

I

C

= −1mA

E

= −50µA

I
V

CB

= −60V

V

EB

= −6V

I

C/IB

= −50mA/−5mA

V

CE

= −6V , IC = −1mA

CE

= −12V , IE = 2mA , f = 100MHz

CB

= −12V , IE = 0A , f = 1MHz

V

I

C

= 1mA

E

= 50µA

I
V

CB

= 60V

V

EB

= 7V

I

C/IB

= 50mA/5mA

V

CE

= 6V , IC = 1mA

CB

= 12V , IE = 0A , f = 1MHz

V

−35.0

−31.5

−28.0

−24.5

−21.0

−17.5

−14.0

−10.5

−7.0

−3.5µA

I

B

−1.20

=0

V)

∗

∗

−100

Ta=25˚C

)

−500

mA

(

−450

−80

C

−400

−350

−300

−60

−40

−20

COLLECTOR CURRENT : I

0

COLLECTOR TO EMITTER VOLTAGE : VCE (

Fig.3 Grounded emitter output

characteristics (II)

−250

−200

−150

−100

−50µA

IB=0

−5−3 −4−2−1

V)

Rev.A 2/4