ROHM EMX5, UMX5N, IMX5 Technical data

High transition frequency (dual transistors)

EMX5 / UMX5N / IMX5

Features Dimensions (Unit : mm)

1) Two 2SC3838K chips in a EMT or UMT or SMT package.

2) High transition frequency. (f

T=3.2GHz)

3) Low output capacitance. (Cob=0.9pF)

Inner circuits

EMX5 / UMX5N

(3) (2) (1)

IMX5

(4) (5) (6)

EMX6

Tr

2

(4) (5) (6)

Tr

Tr

1

2

(3) (2) (1)

Tr

1

ROHM : EMT6

UMX5N

Absolute maximum ratings (Ta=25C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

Junction temperature
Storage temperature

∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.

EMX5 / UMX5N

IMX5

CBO

V
V

CEO

V

EBO

I

Pc

Tj

Tstg

C

Limits

20
11

3

50
150(TOTAL)
300(TOTAL)

150

−55

to +150

Unit

mA

mW

°C
°C

V
V
V

∗1
∗2

ROHM : UMT6
EIAJ : SC-88

IMX5

Package, marking, and packaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

EMX5
EMT6

X5

T2R

8000

UMX5N

UMT6

X5
TR

3000

IMX5

SMT6

X5
T108
3000

ROHM : SMT6
EIAJ : SC-74

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

Each lead has same dimensions

Each lead has same dimensions

Each lead has same dimensions

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2010.09 - Rev.C

nt

DC CURRENT TRANSFER RATIO : h

e

COLLECTOR SATURATION VOLTAGE :

V

(mV)

0

nt

TRANSITION FREQUENCY : f

(GHz)

0

5.0

e

OUTPUT CAPACITANCE : Cob

(pF)

5.0

cs

COLLECTOR TO BASE TIME CONSTANT : Cc rbb'(ps)

0

cs

NOISE FIGURE : NF (dB)

Data Sheet EMX5 / UMX5N / IMX5

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

BV
BV

BV
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage

V
Transition frequency
Output capacitance

∗Transition frequency of the device.

Electrical characteristics curves

500

FE

200

100

50

20

10

0.20.1 0.5 1

COLLECTOR CURRENT : I

2

Ta=25°C

V

51020 50

C

(mA)

Fig.1 DC current gain vs. collector curre

CE

=10V

Ta=25°C

f

(pF)

2.0

1.0

0.5

=1MHz

I

E

=0A

Cob

Cre

CBO
CEO
EBO

I

CBO

I

EBO

h

FE

CE(sat)

f

T

Cob

20
11

56

−

−

3

−

−

−

−

−

−

−

−

1.4 3.2

−

0.9

500

CE(sat)

200

100

50

B=10

Ic/I

20

Ic/IB=2

10

0.20.1 0.5 1 2 5 10 20 5

COLLECTOR CURRENT : I

Fig.2 Collector-emitter saturation voltag
vs. collector current

50

20

10

5.0

−

−

−

0.5

0.5

120

0.5

−

1.55

Unit

V
V
V

μA
μA

−

V

GHz

pF

Ta=25°C

C

(mA)

Ta=25°C

V

CE

=10V

f=31.8MHz

Conditions

I

C

=10μA

C

=1mA

I

E

=10μA

I
V

CB

=10V

EB

=2V

V

CE/IC

=10V/5mA

V

C/IB

=10mA/5mA

I

CE/IE

=10V/−10mA, f=500MHz

V

CB

/f=10V/1MHz, IE=0A

V

T

Fig.3 Gain bandwidth product vs. emitter curre

∗

Ta=25°C

V

CE

=10V

2.0

1.0

0.5

0.2

0.1

−0.2−0.1 −0.5 −1 −2 −5 −10 −20 −5

EMITTER CURRENT : I

20

10

E

(mA)

Ta=25°C

V

CE

f=500MHz

=6V

0.2

FEEDBACK CAPACITANCE : Cre

0.1

0.20.1 0.5 1 2 5 10 20 50

COLLECTOR TO BASE VOLTAGE : V

Fig.4 Capacitance vs. reverse bias voltag

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2.0

1.0

CB

(V)

0.20.1 0.5 1 2 5 10 20 5

COLLECTOR CURRENT : I

C

(mA)

Fig.5 Collector to base time constant

0

0.20.1 0.5 1 2 5 10 20 50

COLLECTOR CURRENT : I

C

(mA)

Fig.6 Noise factor vs. collector current characteristi

vs. collector current characteristi

2010.09 - Rev.C

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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R1010

A