ROHM EMX5, UMX5N, IMX5 Technical data
High transition frequency (dual transistors)
EMX5 / UMX5N / IMX5
Features Dimensions (Unit : mm)
1) Two 2SC3838K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T=3.2GHz)
3) Low output capacitance. (Cob=0.9pF)
Inner circuits
EMX5 / UMX5N
(3) (2) (1)
IMX5
(4) (5) (6)
EMX6
Tr
2
(4) (5) (6)
Tr
Tr
1
2
(3) (2) (1)
Tr
1
ROHM : EMT6
UMX5N
Absolute maximum ratings (Ta=25C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
EMX5 / UMX5N
IMX5
CBO
V
V
CEO
V
EBO
I
Pc
Tj
Tstg
C
Limits
20
11
3
50
150(TOTAL)
300(TOTAL)
150
−55
to +150
Unit
mA
mW
°C
°C
V
V
V
∗1
∗2
ROHM : UMT6
EIAJ : SC-88
IMX5
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX5
EMT6
X5
T2R
8000
UMX5N
UMT6
X5
TR
3000
IMX5
SMT6
X5
T108
3000
ROHM : SMT6
EIAJ : SC-74
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
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2010 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.C
nt
DC CURRENT TRANSFER RATIO : h
e
COLLECTOR SATURATION VOLTAGE :
V
(mV)
0
nt
TRANSITION FREQUENCY : f
(GHz)
0
5.0
e
OUTPUT CAPACITANCE : Cob
(pF)
5.0
cs
COLLECTOR TO BASE TIME CONSTANT : Cc rbb'(ps)
0
cs
NOISE FIGURE : NF (dB)
Data Sheet EMX5 / UMX5N / IMX5
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BV
BV
BV
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
V
Transition frequency
Output capacitance
∗Transition frequency of the device.
Electrical characteristics curves
500
FE
200
100
50
20
10
0.20.1 0.5 1
COLLECTOR CURRENT : I
2
Ta=25°C
V
51020 50
C
(mA)
Fig.1 DC current gain vs. collector curre
CE
=10V
Ta=25°C
f
(pF)
2.0
1.0
0.5
=1MHz
I
E
=0A
Cob
Cre
CBO
CEO
EBO
I
CBO
I
EBO
h
FE
CE(sat)
f
T
Cob
20
11
56
−
−
3
−
−
−
−
−
−
−
−
1.4 3.2
−
0.9
500
CE(sat)
200
100
50
B=10
Ic/I
20
Ic/IB=2
10
0.20.1 0.5 1 2 5 10 20 5
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation voltag
vs. collector current
50
20
10
5.0
−
−
−
0.5
0.5
120
0.5
−
1.55
Unit
V
V
V
μA
μA
−
V
GHz
pF
Ta=25°C
C
(mA)
Ta=25°C
V
CE
=10V
f=31.8MHz
Conditions
I
C
=10μA
C
=1mA
I
E
=10μA
I
V
CB
=10V
EB
=2V
V
CE/IC
=10V/5mA
V
C/IB
=10mA/5mA
I
CE/IE
=10V/−10mA, f=500MHz
V
CB
/f=10V/1MHz, IE=0A
V
T
Fig.3 Gain bandwidth product vs. emitter curre
∗
Ta=25°C
V
CE
=10V
2.0
1.0
0.5
0.2
0.1
−0.2−0.1 −0.5 −1 −2 −5 −10 −20 −5
EMITTER CURRENT : I
20
10
E
(mA)
Ta=25°C
V
CE
f=500MHz
=6V
0.2
FEEDBACK CAPACITANCE : Cre
0.1
0.20.1 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : V
Fig.4 Capacitance vs. reverse bias voltag
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2010 ROHM Co., Ltd. All rights reserved.
2.0
1.0
CB
(V)
0.20.1 0.5 1 2 5 10 20 5
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Collector to base time constant
0
0.20.1 0.5 1 2 5 10 20 50
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Noise factor vs. collector current characteristi
vs. collector current characteristi
2010.09 - Rev.C
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