ROHM EMX4, UMX4N, IMX4 Technical data
EMX4 / UMX4N / IMX4
Transistors
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
zFeatures
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T=1.5GHz)
3) Low output capacitance. (Cob=0.9pF)
zEquivalent circuit s
zDimensions (Unit : mm)
EMX4
EMX4 / UMX4N
(3) (2) (1)
(4) (5) (6)
IMX4
(4) (5) (6)
(3) (2) (1)
ROHM : EMT6
UMX4N
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMX4 / UMX4N
IMX4
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
CBO
V
V
CEO
V
EBO
I
Pc
Tj
Tstg
C
zPackage, marking, and p ackaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX4
EMT6
X4
T2R
8000
UMX4N
UMT6
X4
TR
3000
Limits
30
20
3
50
150(TOTAL)
300(TOTAL)
150
−55 to +150
IMX4
SMT6
X4
T108
3000
Unit
mA
mW
°C
°C
ROHM : UMT6
V
V
EIAJ : SC-88
IMX4
V
∗1
∗2
ROHM : SMT6
EIAJ : SC-74
zElectrical characteristics (T a=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
∗Transition frequency of the device.
Parameter Symbol Min. Typ. Max.
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
rbb' Cc
NF
30
20
3
−
−
56
−
600 1500
−
0.95
−
−
4.5
Unit
V
C
−
−
−
−
−
−
−
0.5
−
0.5
−
180
−
0.5
−
1.6
13
6
−
V
V
µA
µA
−
V
MHz
pF
ps
dB
I
C
I
E
I
V
V
V
C/IB
I
V
V
V
V
Conditions
=10µA
=1mA
=10µA
CB
=15V
EB
=2V
CE/IC
=10V/10mA
=20mA/4mA
CE/IE
=10V/ −10mA, f=200MHz
CB
/f=10V/1MHz, IE=0A
CB
=10V, IC=10mA , f=31.8MHz
CE
=12V, IC=2mA , f=200MHz , Rg=50Ω
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD pro tection circuit.
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
∗
Rev.C 1/3
EMX4 / UMX4N / IMX4
Transistors
zElectrical characteristic curves
500
FE
200
100
Ta=25
VCE=10V
°C
(mV)
CE(sat)
500
200
100
Ta=25
IC/IB=5
°C
(pF)
oB
(pF)
re
5.0
2.0
1.0
Cob
Ta=25
f=1MHz
I
E
=0A
°C
50
20
DC CURRENT TRANSFER RATIO :h
10
0.1 0.2 0.5 1 2 5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.1 DC current gain vs. collector current
5000
(MHz)
T
2000
1000
500
200
TRANSITION FREQUENCY : f
100
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50
EMITTER CURRENT : IE (mA)
Ta=25
VCE=10V
°C
Fig.4 Gain bandwidth product vs. emitter current
25
20
(dB)
2
21el
15
10
5
INSERTION GAIN : IS
Ta=25
°C
VCE=12V
f=200MHz
50
20
10
COLLECTOR SATURATION VOLTAGE :V
0.1 0.2 0.5 1 2 5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation voltage
vs. collector current
50
rbb' (ps)
c
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE TIME CONSTANT : C
Fig.5 Collector to base time constance
vs. collector current
Ta=25
VCE=10V
f=31.8MHz
COLLECTOR CURRENT : IC (mA)
°C
30
25
(dB)
2
20
21el
15
10
INSERTION GAIN : IS
5
Ta=25
°C
IC=2mA
f=200MHz
0.5
0.2
OUTPUT CAPACITANCE :C
FEEDBACK CAPACITANCE :C
0.1
0.1 0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : V
Cre
CB
(V)
Fig.3 Capacitance vs. reverse bias voltage
Ta=25
25
(dB)
2
20
21el
15
10
5
INSERTION GAIN : IS
0
0.1 0.2 0.5 1 2 5 10
FREQUENCY : f (GHz)
VCE=10V
C
=10mA
I
°C
Fig.6 Insertion gain vs. frequency
Ta=25
°C
VCE=12V
20
10
NOISE FIGURE : NF(dB)
f=200MHz
0
0.5 1 2 5 10 20 50
COLLECTOR CURRENT : Ic (mA)
Fig.7 Insertion gain vs. collector current
0
024 6 81012
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.8 Insertion gain vs. collector voltage
0
0.1 0.2 0.5 1 2 5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.9 Noise factor vs. collector current
Rev.C 2/3
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