ROHM EMX26 Technical data
EMX26
Transistors
General purpose transistors
(dual transistors)
EMX26
zFeatures
1) Two 2SD2654 chips in a EMT package.
2) Mounting possible with EMT3 automatic mounting
machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
1 and T r2.
zEquivalent circuit
zExternal dimensions (Unit : mm)
EMX26
(3)
ROHM : EMT6
(4)
0.22
(6)
0.13
Abbreviated symbol : X26
0.5
1.0
(2)(5)
0.5
(1)
1.2
1.6
0.5
Each lead has same dimensions
1.6
EMX26
(3) (2) (1)
Tr
Tr
2
(4) (6)(5)
1
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
Single pulse Pw=100ms.
∗2
120mW per element must not be exceeded.
V
V
V
Tstg −55 to +150 °C
CBO
CEO
EBO
I
C
Pd
Tj 150 °C
Limits
60 V
50
12
150 (TOTAL)
Unit
V
V
A (DC)0.15
A (Pulse) 0.2
mW
∗1
∗2
1/3
EMX26
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
zPackaging specifications
Package
Code
Basic ordering
Type
unit (pieces)
EMX26
zElectrical characteristic curves
2.0
Ta=25°C
1.6
(mA)
2.0µA
C
1.8µA
1.6µA
1.4µA
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0
COLLECTOR TO EMITTER VOLTAGE : V
1.2µA
1.0µA
0.8µA
0.6µA
0.4µA
0.2µA
0.20.1 0.3 0.4
IB=0
CE
Fig.1 Grounded emitter output
characteristics ( Ι )
10000
5000
2000
FE
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
0.2 1 2 50.5 10 20 50 100
COLLECTOR CURRENT : I
Ta=25°C
Measured
using pulse current
VCE=10V
C
(mA)
Fig.4 DC current gain vs.
collector current ( Ι )
Taping
T2R
8000
0.5
(V)
5V
3V
200
BV
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
f
Cob
CEO
EBO
FE
T
60
50
12
820
−
−
−
−
−
−
250
3.5
0.3
−
0.3
−
0.3
−
2700
−
−
−
∗
−
−
−
−
−
C
=10µA
V
I
I
C
=1mA
V
E
=10µA
I
V
CB
=50V
V
µA
EB
=12V
V
µA
C
/IB=50mA/5mA
I
V
V
CE/IC
−
MHz
pF
=5V/1mA
VCE=5V, IE=−10mA, f=100MHz
CB
=5V, IE=0A, f=1MHz
V
200
500µA
450µA
160
(mA)
400µA
C
350µA
300µA
120
80
40
COLLECTOR CURRENT : I
Ta=25°C
Measured
using pulse current
0
020
COLLECTOR TO EMITTER VOLTAGE : V
841216
250µ
200
150
µA
µ
100
50
A
A
µA
µA
IB=0
CE
(V)
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
200
VCE=5V
100
50
(mA)
C
20
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0 0.40.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
2000
FE
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
0.2 1 2 50.5 10 20 50 100
Ta=100°C
C
°
25
COLLECTOR CURRENT : I
°C
25
−
VCE=5V
Measured
using pulse current
Fig.5 DC current gain vs.
collector current ( ΙΙ )
C
(mA)
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
2
200
1
COLLECTOR SATURATION VOLTAGE : V
0.2 200
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
∗
∗
∗
C
°
C
°C
25°
25
−
Ta=100
0.6 0.8 1.0
Ta=25
IC / IB=50
20
10
12 50.5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
1.41.2
C
°
2/3
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