Page 1
EMX26
Transistors
General purpose transistors
(dual transistors)
EMX26
zFeatures
1) Two 2SD2654 chips in a EMT package.
2) Mounting possible with EMT3 automatic mounting
machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
1 and T r2.
zEquivalent circuit
zExternal dimensions (Unit : mm)
EMX26
(3)
ROHM : EMT6
(4)
0.22
(6)
0.13
Abbreviated symbol : X26
0.5
1.0
(2)(5)
0.5
(1)
1.2
1.6
0.5
Each lead has same dimensions
1.6
EMX26
(3) (2) (1)
Tr
Tr
2
(4) (6)(5)
1
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
Single pulse Pw=100ms.
∗2
120mW per element must not be exceeded.
V
V
V
Tstg −55 to +150 °C
CBO
CEO
EBO
I
C
Pd
Tj 150 °C
Limits
60 V
50
12
150 (TOTAL)
Unit
V
V
A (DC)0.15
A (Pulse) 0.2
mW
∗1
∗2
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EMX26
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
zPackaging specifications
Package
Code
Basic ordering
Type
unit (pieces)
EMX26
zElectrical characteristic curves
2.0
Ta=25°C
1.6
(mA)
2.0µA
C
1.8µA
1.6µA
1.4µA
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0
COLLECTOR TO EMITTER VOLTAGE : V
1.2µA
1.0µA
0.8µA
0.6µA
0.4µA
0.2µA
0.20.1 0.3 0.4
IB=0
CE
Fig.1 Grounded emitter output
characteristics ( Ι )
10000
5000
2000
FE
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
0.2 1 2 50.5 10 20 50 100
COLLECTOR CURRENT : I
Ta=25°C
Measured
using pulse current
VCE=10V
C
(mA)
Fig.4 DC current gain vs.
collector current ( Ι )
Taping
T2R
8000
0.5
(V)
5V
3V
200
BV
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
f
Cob
CEO
EBO
FE
T
60
50
12
820
−
−
−
−
−
−
250
3.5
0.3
−
0.3
−
0.3
−
2700
−
−
−
∗
−
−
−
−
−
C
=10µA
V
I
I
C
=1mA
V
E
=10µA
I
V
CB
=50V
V
µA
EB
=12V
V
µA
C
/IB=50mA/5mA
I
V
V
CE/IC
−
MHz
pF
=5V/1mA
VCE=5V, IE=−10mA, f=100MHz
CB
=5V, IE=0A, f=1MHz
V
200
500µA
450µA
160
(mA)
400µA
C
350µA
300µA
120
80
40
COLLECTOR CURRENT : I
Ta=25°C
Measured
using pulse current
0
020
COLLECTOR TO EMITTER VOLTAGE : V
841216
250µ
200
150
µA
µ
100
50
A
A
µA
µA
IB=0
CE
(V)
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
200
VCE=5V
100
50
(mA)
C
20
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0 0.40.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
2000
FE
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
0.2 1 2 50.5 10 20 50 100
Ta=100°C
C
°
25
COLLECTOR CURRENT : I
°C
25
−
VCE=5V
Measured
using pulse current
Fig.5 DC current gain vs.
collector current ( ΙΙ )
C
(mA)
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
2
200
1
COLLECTOR SATURATION VOLTAGE : V
0.2 200
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
∗
∗
∗
C
°
C
°C
25°
25
−
Ta=100
0.6 0.8 1.0
Ta=25
IC / IB=50
20
10
12 50.5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
1.41.2
C
°
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EMX26
Transistors
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
2
1
COLLECTOR SATURATION VOLTAGE : V
0.2 1 2 50.5 10 20 50 100
Ta=100°C
25°C
−25°C
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
B
I
/
C
I
1000
500
200
(MHz)
T
100
50
20
10
5
C
Ta=25°
TRANSITION FREQUENCY : f
=5V
CE
V
2
Measured
using pulse current
1
−2 −5 −10 −20 −50 −100−200 −500
−1 −1000
EMITTER CURRENT : IE (mA)
Fig.10 Gain bandwidth product
vs. emitter current
=10
10000
(mV)
5000
BE(sat)
2000
1000
500
200
100
50
20
10
COLLECTOR SATURATION VOLTAGE : V
200
0.2 1 2 50.5 10 20 50 100
IC/IB=10
20
50
COLLECTOR CURRENT : IC (mA)
Fig.8 Base-emitter saturation voltage
vs. collector current ( Ι )
1000
(pF)
500
ob
200
100
50
20
10
5
2
COLLECTOR OUTPUT CAPACITANCE : C
1
0.2 0.5 1 2 5 10 20 50
0.1 100
COLLRCTOR TO BASE VOLTAGE : V
Fig.11 Collector output capacitance
vs. collector-base voltage
Ta=25
Ta=25°
f=1MHz
=0A
E
I
10000
C
°
(mV)
5000
BE(sat)
2000
1000
500
200
100
50
20
10
COLLECTOR SATURATION VOLTAGE : V
200
0.2 1 2 50.5 10 20 50 100
Ta= −25°C
COLLECTOR CURRENT : IC (mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( ΙΙ )
C
CB
(V)
100
50
20
10
5
Ron : (Ω)
2
1
0.5
0.2
0.1
0.02 0.05 0.1 0.2 0.5 1 2 5
0.01 10
Fig.12 Output on resistance
vs. base current
25°C
100°C
IB (mA)
B
/I
C
I
C
°
Ta=25
f=1kHz
=100mV(rms)
i
V
Ω
=1k
L
R
=10
200
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Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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