ROHM EMX2, IMX2, UMX2N Schematic [ru]
EMX2 / UMX2N / IMX2
Transistors
General purpose (dual transistors)
EMX2 / UMX2N / IMX2
zFeatures
1) Two 2SC2412AK chips in a EMT or UMT or SMT
package.
zEquivalent c ircuits
EMX2 / UMX2N
2
Tr
(5) (6)
(4)
IMX2
(1)(2)(3)
Tr
1
Tr
2
(3)
(2) (1)
(6)(5)(4)
Tr
1
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Parameter Symbol
EMX2 / UMX2N
IMX2
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
Limits
60
50
7
150
150(TOTAL)
300(TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
zPackage, marking, and packaging specifications
X2
TR
IMX2
SMT6
X2
T108
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX2
EMT6
X2
T2R
8000
UMX2N
UMT6
3000
Rev.A 1/3
zExternal dimensions (Unit : mm)
EMX2
(4)
0.22
(6)
1.2
1.6
0.13
ROHM : EMT6
UMX2N
)
4
(
)
5
(
0.2
)
6
(
∗1
∗2
1.25
0.15
0.1Min.
ROHM : UMT6
EIAJ : SC-88
IMX2
)(
6
(
0.3
)(
5
)
4
1.6
2.8
0.15
0.3Min.
ROHM : SMT6
EIAJ : SC-74
(3)
0.5
1.0
(2)(5)
(1)
Each lead has same dimensions
2.1
0~0.1
Each lead has same dimensions
0~0.1
Each lead has same dimensions
1.6
0.5
0.5
)
3
(
)
2
(
1.3
0.65 0.65
0.7
0.95
0.95
0.8
2.0
0.9
2.9
1.9
1.1
)
1
(
)
1
(
)
2
(
)
3
(
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition frequency of the device.
zElectrical characteristics curves
50
20
(mA)
C
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
C
C
°
C
°
25
55
100°
−
=
Ta
Fig.1 Grounded emitter propagation
characteristics
500
Ta=25°C
FE
200
100
50
VCE=5V
V
CE
=6V
BE
(V)
3V
1V
EMX2 / UMX2N / IMX2
Conditions
=60V
=7V
=50mA/5mA
=6V, IC=1mA
=12V, IE= −2mA, f=100MHz
∗
=12V, IE=0mA, f=1MHz
IC/IB=50
30µA
27µA
24µA
21µA
18µA
15µA
12µA
9µA
6µA
3µA
IB=0A
Ta=25°C
20
10
Ta=25°C
4 8 12 16
0
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
CE
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
100
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
Ta=25°C
60
50
120
0.4 0.8 1.2 1.6 2.00
7
−
−
−
180
−
−
−
−
−
−
−
−
−
2 3.5 pF
Fig.2 Grounded emitter output
characteristics ( Ι )
500
FE
200
100
50
Ta=100°C
25°C
−55°C
−
−
−
0.1
0.1
0.4
560
−
VCE=
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
CE
5V
Unit
V
I
V
I
V
I
V
µA
V
µA
V
I
V
−
MHz
V
V
(mA)
C
COLLECTOR CURRENT : I
(V)
COLLECTOR TO EMITTER VOLTAGE : V
0.5
(V)
CE(sat)
0.2
0.1
0.05
C
=50µA
C
=1mA
E
=50µA
CB
EB
C/IB
CE
CE
CB
10
8
6
4
2
0
20
(V)
DC CURRENT GAIN : h
20
10
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Fig.4 DC current gain vs.
collector current ( Ι )
C
(mA)
DC CURRENT GAIN : h
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Fig.5 DC current gain vs.
collector current ( ΙΙ )
C
(mA)
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Rev.A 2/3
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