ROHM EMX18, UMX18N Technical data

EMX18 / UMX18N

Transistors
General purpose transistors (dual transistors)
EMX18 / UMX18N
zFeatures
2) Mounting possible with EMT3 or UMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type NPN silicon transistor
The following characteristics apply to both Tr
1 and T r2.
zEquivalent circuit
EMX18 / UMX18N
(3) (2) (1)
Tr
Tr
2
(4) (6)(5)
1
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage
V V VEBO
Collector current
Power dissipation Junction temperature Storage temperature
1 120mW per element must not be exceeded.
Tstg 55 to +150 ˚C
CBO 15 V
CEO
I
C mA500
ICP A1.0 Pd
Tj 150 ˚C
Limits
12
6
150 (TOTAL)
Rev.A 1/3
zExternal dimensions (Unit : mm)
EMX18
(4)
0.22
(6)
0.13
ROHM : EMT6
Abbreviated symbol : X18
UMX18N
ROHM : UMT6 EIAJ : SC-88
)
4
(
)
5
(
0.2
)
6
(
0.15
0.1Min.
Abbreviated symbol : X18
Unit
V V
1
mW
(3)
0.5
1.0
1.6
(2)(5)
0.5
(1)
1.2
1.6
0.5
Each lead has same dimensions
)
3
(
0.65
)
2
(
1.3
0.65
0.7
2.0
0.9
)
1
(
1.25
2.1
0~0.1
Each lead has same dimensions
EMX18 / UMX18N
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
zPackaging specifications
Package Code TN Basic ordering
Type
unit (pieces) EMX18 UMX18N
zElectrical characteristic curves
1000
500
(mA)
C
200
100
50
20
10
5
COLLECTOR CURRENT : I
2
1
0
C
°
C
°
25
25
1
-40
Ta =
0.5 1.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
VCE = 2V
C
°
CBO
BV BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
Taping
T2R
8000
FE
DC CURRENT GAIN : h
1.5
Typ. Max. Unit Conditions
Min.
C
=1
I I V V I V
V V
C
E
C/IB
= =1
CB
EB
CE
CE
CB
0µA
1mA
0µA
=15 =6
=20
=2
=
2V, I
=
10V, I
15
12
6
90
270
320
7.5
0.1
0.1 250 680
VI V V
µA µA
mV
MHz
PF
3000
1000
500
200 100
50
20 10
5
2 1
1 2 5 10 20 50 100 200 500
Ta = 125°C
25°C
-40°C
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
VCE =
V
V
0mA/10mA
V, I
C
=
10mA
E
=
10mA, f=100MHz
E
=
0A, f=1MHz
2V
1000
1000
(mV)
500
CE(sat)
200 100
50
Ta = 125°C
20 10
5
2 1
COLLECTOR SATURATION VOLTAGE : V
25°C
-40°C
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
IC/
IB =
20
Rev.A 2/3
EMX18 / UMX18N
Transistors
1000
(mV)
500
CE(sat)
200 100
50
IC/
IB = 50
20
20
10
10
5
2 1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (mA)
Ta = 25°C
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
1000
500
200 100
50
20 10
5
2 1
0.1
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance vs collector-base voltage
1
0.2
0.5
2
Emitter input capacitance vs emitter-base voltage
Cib
5
Cob
10 20
I
E
=
f
=
1MHz
Ta = 25°C
10000
(mV)
5000
BE(sat)
2000 1000
500
200 100
50
20 10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
0A
50 100
Ta =
-40°C 25°C
125°C
IC/
IB =
20
1000
500
V
CE
=
2V
Ta = 25°C
Pulsed
200 100
)
Z
50
(MH
T
f
20 10
5
2 1
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
102050
215
Emitter input capacitance vs. base voltage
100 200
500 1000
Rev.A 3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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