ROHM EMX18, UMX18N Technical data
EMX18 / UMX18N
Transistors
General purpose transistors
(dual transistors)
EMX18 / UMX18N
zFeatures
1) Two 2SC5585 chips in a EMT or UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
1 and T r2.
zEquivalent circuit
EMX18 / UMX18N
(3) (2) (1)
Tr
Tr
2
(4) (6)(5)
1
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
VEBO
Collector current
Power dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
Tstg −55 to +150 ˚C
CBO 15 V
CEO
I
C mA500
ICP A1.0
Pd
Tj 150 ˚C
Limits
12
6
150 (TOTAL)
Rev.A 1/3
zExternal dimensions (Unit : mm)
EMX18
(4)
0.22
(6)
0.13
ROHM : EMT6
Abbreviated symbol : X18
UMX18N
ROHM : UMT6
EIAJ : SC-88
)
4
(
)
5
(
0.2
)
6
(
0.15
0.1Min.
Abbreviated symbol : X18
Unit
V
V
1
∗
mW
(3)
0.5
1.0
1.6
(2)(5)
0.5
(1)
1.2
1.6
0.5
Each lead has same dimensions
)
3
(
0.65
)
2
(
1.3
0.65
0.7
2.0
0.9
)
1
(
1.25
2.1
0~0.1
Each lead has same dimensions
EMX18 / UMX18N
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
zPackaging specifications
Package
Code TN
Basic ordering
Type
unit (pieces)
EMX18
UMX18N
zElectrical characteristic curves
1000
500
(mA)
C
200
100
50
20
10
5
COLLECTOR CURRENT : I
2
1
0
C
°
C
°
25
25
1
-40
Ta =
0.5 1.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
VCE = 2V
C
°
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
Taping
T2R
8000
FE
DC CURRENT GAIN : h
1.5
Typ. Max. Unit Conditions
Min.
C
=1
I
I
V
V
I
V
V
V
C
E
C/IB
=
=1
CB
EB
CE
CE
CB
0µA
1mA
0µA
=15
=6
=20
=2
=
2V, I
=
10V, I
−
15
−
12
−
6
−
−
−
−
−
90
270
−
− 320 −
−
7.5
−
−
−
0.1
0.1
250
680
−
VI
V
V
µA
µA
mV
−
MHz
PF
3000
1000
500
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 500
Ta = 125°C
25°C
-40°C
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
VCE =
V
V
0mA/10mA
V, I
C
=
10mA
E
=−
10mA, f=100MHz
E
=
0A, f=1MHz
2V
1000
1000
(mV)
500
CE(sat)
200
100
50
Ta = 125°C
20
10
5
2
1
COLLECTOR SATURATION VOLTAGE : V
25°C
-40°C
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
IC/
IB =
20
Rev.A 2/3
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