Transistors
General purpose transistors
(dual transistors)
EMX1 / UMX1N / IMX1
EMX1 / UMX1N / IMX1
!!!!
Features
1) Two 2SC2412K chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!!!!Structure
Epitaxial planar type
NPN silicon transistor
!!!!
Equivalent circuit
EMX1 / UMX1N IMX1
(3) (2) (1)
Tr
Tr
2
1
(4) (6)(5)
(4) (6)(5)
2
Tr
(3) (2) (1)
Tr
1
The following characteristics apply to both Tr1 and Tr
!!!!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
V
Collector current
Power
dissipation
EMX1, UMX1N 150 (TOTAL)
IMX1 300 (TOTAL)
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
Tstg −55∼+150 ˚C
CBO
CEO
EBO
C
I
P
Tj 150 ˚C
Limits
60 V
50
7
C
Unit
V
V
mA150
mW
!!!!
External dimensions
(Units : mm)
EMX1
(3)
(4)
0.5
1.0
1.6
(2)(5)
ROHM : EMT6
UMX1N
ROHM : UMT6
EIAJ : SC-88
0.22
0.13
Abbreviated symbol : X1
0.2
0.15
0.1Min.
Abbreviated symbol : X1
0.5
(1)
(6)
1.2
1.6
0.5
Each lead has same dimensions
)
)
3
4
(
0.65
(
)
)
2
5
(
(
)
)
6
1
(
(
0.65
1.25
2.1
0.7
0to0.1
Each lead has same dimensions
1.3
2.0
0.9
IMX1
)
)
6
1
(
(
0.3
0.15
2.
ROHM : SMT6
EIAJ : SC-74
1
∗
2
∗
0.3to0.6
Abbreviated symbol : X1
0.95
2.9
)
)
5
(
)
4
(
1.9
2
(
0.95
)
3
(
1.6
2.8
1.1
0.8
0to0.1
Each lead has same dimensions
1/3
Transistors
!!!!Electrical characteristics (Ta = 25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
!!!!Packaging specifications
Package
Code TN T110
Type
EMX1
UMX1N
IMX1
Basic ordering
unit (pieces)
BV
BV
BV
I
CBO
I
EBO
V
CE (sat)
h
Cob
T2R
8000
CBO
CEO
EBO
FE
f
T
Typ. Max. Unit Conditions
Min.
−
60
−
50
−
7
−
−
−
−
−
−
120
−
− 180 −
−
2
0.1
0.1
0.4
560
3.5
−
−
−
VI
V
V
µA
µA
V
−
MHz
PF
C
=
50µA
C
=
1mA
I
E
=
50µA
I
V
CB
EB
V
I
C/IB
V
CE
V
CE
V
CB
=
60V
=7
V
=
50mA/5mA
=
6V, I
=
12V, I
=
12V, I
Taping
3000 3000
C
=
1mA
E
=−
2mA, f=100MHz
E
=
0A, f=1MHz
EMX1 / UMX1N / IMX1
∗
!!!!Electrical characteristic curves
50
20
(mA)
C
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
BASE TO EMITTER VOLTAGE : V
25˚C
−55˚C
Ta=100˚C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig.1 Grounded emitter propagation
characteristics
VCE=
6V
BE
(V)
100
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
Ta=25˚C
0.4 0.8 1.2 1.6 2.00
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
Fig.2 Grounded emitter output
characteristics ( I )
10
Ta=25˚C
(mA)
8
C
6
4
2
COLLECTOR CURRENT : I
0
0
4 8 12 16
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
30µA
27µA
24µA
21µA
18µA
15µA
12µA
9µA
6µA
3µA
IB=0A
20
CE
(V)
Fig.3 Grounded emitter output
characteristics ( II )
2/3
Transistors
EMX1 / UMX1N / IMX1
500
Ta=25˚C
FE
200
100
50
DC CURRENT GAIN : h
20
10
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
VCE=5V
3V
1V
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
0.5
(V)
CE (sat)
0.2
IC/IB=50
0.1
0.05
0.02
0.01
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
20
10
C
(mA)
Ta=25
Fig.7 Collector-emitter saturation
voltage vs. collector current ( I )
500
FE
DC CURRENT GAIN : h
Ta=100˚C
200
100
50
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
−55˚C
25˚C
VCE=
C
(mA)
5V
Fig.5 DC current gain vs. collector
current ( II )
0.5
˚C
(V)
CE (sat)
0.2
Ta=100˚C
0.1
0.05
0.02
0.01
0.2
COLLECTOR SATURATION VOLTAGE : V
25˚C
−55˚C
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
IC/IB=10
Fig.8 Collector-emitter saturation
voltage vs. collector current ( II )
V)
0.5
(
CE (sat)
0.2
0.1
IC/IB=50
0.05
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
Fig.6 Collector-emitter saturation
voltage vs. collector current
0.5
(V)
CE (sat)
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
Ta=100˚C
0.2
0.1
0.2
−55˚C
0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : I
Fig.9 Collector-emitter saturation
voltage vs. collector current ( III )
20
10
25˚C
Ta=25˚C
C
(mA)
IC/IB=50
C
(mA)
Ta=25˚C
V
E
(mA)
CE
500
(MHz)
T
200
100
TRANSITION FREQUENCY : f
50
−0.5 −1 −2 −5 −10 −20 −50 −100
EMITTER CURRENT : I
Fig.10 Gain bandwidth product vs.
emitter current
=6V
20
(pF)
(pF)
10
: Cib
5
2
1
0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob
EMITTER INPUT CAPACITANCE
EMITTER TO BASE VOLTAGE : V
Cib
Fig.11 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25˚C
f=1MHz
I
I
Cob
Ta=25
E
(mA)
f=32MH
VCB=6V
˚C
Z
(ps)
200
E
=0A
C
=0A
CB
(V)
EB
(V)
bb'
100
50
20
10
−0.2 −0.5 −1 −2 −5 −10
EMITTER CURRENT : I
BASE COLLECTOR TIME CONSTANT : Cc r
Fig.12 Base-collector time constant vs.
emitter current
3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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