ROHM EMX1, UMX1N, IMX1 Technical data

Transistors

General purpose transistors
(dual transistors)

EMX1 / UMX1N / IMX1

EMX1 / UMX1N / IMX1

!!!!

Features

1) Two 2SC2412K chips in a EMT or UMT or SMT
package.

2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.

3) Transistor elements are independent, eliminating

interference.

4) Mounting cost and area can be cut in half.

!!!!Structure

Epitaxial planar type
NPN silicon transistor

!!!!

Equivalent circuit

EMX1 / UMX1N IMX1

(3) (2) (1)

Tr

Tr

2

1

(4) (6)(5)

(4) (6)(5)

2

Tr

(3) (2) (1)

Tr

1

The following characteristics apply to both Tr1 and Tr

!!!!Absolute maximum ratings (Ta = 25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

V
V
V

Collector current

Power
dissipation

EMX1, UMX1N 150 (TOTAL)

IMX1 300 (TOTAL)
Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

Tstg −55∼+150 ˚C

CBO

CEO

EBO

C

I

P

Tj 150 ˚C

Limits

60 V
50

7

C

Unit

V
V

mA150

mW

!!!!

External dimensions

(Units : mm)

EMX1

(3)

(4)

0.5

1.0

1.6

(2)(5)

ROHM : EMT6

UMX1N

ROHM : UMT6
EIAJ : SC-88

0.22

0.13

Abbreviated symbol : X1

0.2

0.15

0.1Min.

Abbreviated symbol : X1

0.5

(1)

(6)

1.2

1.6

0.5

Each lead has same dimensions

)

)

3

4

(

0.65

(

)

)

2

5

(

(

)

)

6

1

(

(

0.65

1.25

2.1

0.7

0to0.1

Each lead has same dimensions

1.3

2.0

0.9

IMX1

)

)

6

1

(

(

0.3

0.15

2.

ROHM : SMT6
EIAJ : SC-74

1

∗

2

∗

0.3to0.6

Abbreviated symbol : X1

0.95

2.9

)

)

5

(
)

4

(

1.9

2

(

0.95

)

3

(

1.6

2.8

1.1

0.8

0to0.1

Each lead has same dimensions

1/3

Transistors

!!!!Electrical characteristics (Ta = 25°C)

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

!!!!Packaging specifications

Package
Code TN T110

Type
EMX1
UMX1N
IMX1

Basic ordering
unit (pieces)

BV
BV
BV

I

CBO

I

EBO

V

CE (sat)

h

Cob

T2R

8000

CBO

CEO

EBO

FE

f

T

Typ. Max. Unit Conditions

Min.

−

60

−

50

−

7

−

−

−

−

−

−

120

−

− 180 −

−

2

0.1

0.1

0.4

560

3.5

−

−

−

VI
V
V

µA
µA

V

−

MHz

PF

C

=

50µA

C

=

1mA

I

E

=

50µA

I
V

CB

EB

V
I

C/IB

V

CE

V

CE

V

CB

=

60V

=7

V

=

50mA/5mA

=

6V, I

=

12V, I

=

12V, I

Taping

3000 3000

C

=

1mA

E

=−

2mA, f=100MHz

E

=

0A, f=1MHz

EMX1 / UMX1N / IMX1

∗

!!!!Electrical characteristic curves

50

20

(mA)

C

10

5

2
1

0.5

COLLECTOR CURRENT : I

0.2

0.1
0

BASE TO EMITTER VOLTAGE : V

25˚C

−55˚C

Ta=100˚C

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Fig.1 Grounded emitter propagation

characteristics

VCE=

6V

BE

(V)

100

80

(mA)

C

60

40

20

COLLECTOR CURRENT : I

0

COLLECTOR TO EMITTER VOLTAGE : V

Ta=25˚C

0.4 0.8 1.2 1.6 2.00

0.50mA

0.45mA

0.40mA

0.35mA

0.30mA

0.25mA

0.20mA

0.15mA

0.10mA

0.05mA

IB=0A

Fig.2 Grounded emitter output
characteristics ( I )

10

Ta=25˚C

(mA)

8

C

6

4

2

COLLECTOR CURRENT : I

0

0

4 8 12 16

CE

(V)

COLLECTOR TO EMITTER VOLTAGE : V

30µA
27µA
24µA
21µA

18µA
15µA

12µA

9µA
6µA

3µA

IB=0A

20

CE

(V)

Fig.3 Grounded emitter output
characteristics ( II )

2/3