ROHM EMT3, IMT3A Technical data

EMT3 / IMT3A

Transistors

General purpose (dual transistors)

EMT3 / IMT3A

zFeatures

1) Two 2SA1037AK chips in a EMT or SMT package.

zEquivalent c ircuits

EMT3

Tr

2

IMT3A

(1)(2)(3)

Tr

2

Tr

1

(6)(5)(4)

Tr

1

zExternal dimensions (Unit : mm)

EMT3

(4)

0.22

(6)

1.2

1.6

0.13

(3)

0.5

1.0

1.6

(2)(5)

0.5

(1)

0.5

(4) (5) (6)

(3) (2) (1)

zAbsolute maximum ratings (Ta=25°C)

C

Limits

−60

−50

−6

−150

150(TOTAL)
300(TOTAL)

150

−55

to

+150

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

EMT3

IMT3A

Junction temperature
Storage temperature

∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.

CBO

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

zPackage, marking, and packaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

EMT3
EMT6

T3

T2R

8000

IMT3A

SMT6

T3
T108
3000

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

∗Transition frequency of the device.

BV
BV
BV

V

CBO
CEO
EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

Cob

−60

−50

−6

120

Unit

V
V
V

mA

∗1

mW

∗2

°C
°C

−

−

−

−

−

−

−

−

−

−

140

−

45pF

−

−

−

−

−0.1

−0.1

−0.5

560

−

ROHM : EMT6

IMT3A

ROHM : SMT6
EIAJ : SC-74

Unit

V

C

=−50µA

I

V

C

=−1mA

I

V

I

E

=−50µA

µA

V

CB

µA

EB

V

V

C/IB

I

−

V

MHz

CE

V

CE
CE

V

Each lead has same dimensions

)(

)

6

1

(

(

0.3

0.15

0.3Min.

)(

5

)

4

1.6

2.8

0.95

)

1.9

2

(

0.95

)

3

(

0.8

0~0.1

Each lead has same dimensions

Conditions

=−60V

=−6V

=−50mA/−5mA
=−6V, IC=−1mA
=−12V, IE=2mA, f=100MHz
=−12V, IE=0A, f=1MHz

2.9

1.1

∗

Rev.A 1/2

Transistors

zElectrical characteristics curves

−50

Ta=100˚C

25˚C

−20

mA)

COLLECTOR CURRENT : Ic (

−40˚C

−10

−5

−2

−1

−0.5

−0.2

−0.1

−0.2

−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6

BASE TO EMITTER VOLTAGE : VBE (

Fig.1 Grounded emitter propagation

characteristics

500

Ta=25˚C

200

100

DC CURRENT GAIN : hFE

50

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR CURRENT : IC (

VCE= −5V

Fig.4 DC current gain vs.

collector current (I)

−1

V)

(

CE(sat)

−0.5

−0.2

Ta=100˚C

−0.1

−0.05

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR SATURATION VOLTAGE : V

25˚C

−40˚C

COLLECTOR CURRENT : IC (

Fig.7 Collector-emitter saturation

voltage vs. collector current (II)

−3V

−1V

VCE= −6V

V)

mA)

lC/lB=10

mA)

EMT3 / IMT3A

−10

Ta=25˚C

−8

mA)

(

C

−6

−4

−2

COLLECTOR CURRENT : I

−0.8 −1.6 −2.0

−0.4

COLLECTOR TO MITTER VOLTAGE : VCE (

−35.0

−31.5

−28.0

−24.5

−21.0

−17.5

−14.0

−10.5

−7.0

−3.5µA

−1.20

Fig.2 Grounded emitter output

characteristics (I)

500

FE

200

100

50

DC CURRENT GAIN : h

−0.2 −0.5 −1 −2 −5 −10 −20 −50−100

Ta=100˚C

25˚C

−40˚C

VCE= −6V

COLLECTOR CURRENT : IC (

mA)

Fig.5 DC current gain vs.

collector current (II)

1000

500

MHz)

(

T

200

100

50

TRANSITION FREQUENCY : f

12 510

EMITTER CURRENT : I

Fig.8 Gain bandwidth product vs.

emitter current

Ta=25˚C

V

E

(

mA)

CE

= −

50 1000.5 20

I

B

=0

12V

−100

Ta=25˚C

)

−500

mA

(

−450

−80

C

−400

−350

−300

−60

−40

−20

COLLECTOR CURRENT : I

0

V)

COLLECTOR TO EMITTER VOLTAGE : VCE (

Fig.3 Grounded emitter output

characteristics (II)

−1

V)

(

CE(sat)

−0.5

−0.2

−0.1

−0.05

−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR SATURATION VOLTAGE : V

IC/IB=

50

20
10

COLLECTOR CURRENT : IC (

Fig.6 Collector-emitter saturation

voltage vs. collector current (I)

20

pF)

pF)

10

5

2

COLLECTOR TO BASE VOLTAGE : VCB (V)

COLLECTOR OUTPUT CAPACITANCE : Cob (

EMITTER INPUT CAPACITANCE : Cib (

EMITTER TO BASE VOLTAGE : V

Cib

Cob

−1 −2 −5 −10

−0.5 −20

Fig.9 Collector output capacitance vs.

collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage

−250

−200

−150

−100

−50µA

IB=0

Ta=25˚C

mA)

Ta=25˚C

f=1MHz

I

E

=0A

I

C

=0A

EB

(V)

−5−3 −4−2−1

V)

Rev.A 2/2

Appendix

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1