ROHM EMT3, IMT3A Technical data
EMT3 / IMT3A
Transistors
General purpose (dual transistors)
EMT3 / IMT3A
zFeatures
1) Two 2SA1037AK chips in a EMT or SMT package.
zEquivalent c ircuits
EMT3
Tr
2
IMT3A
(1)(2)(3)
Tr
2
Tr
1
(6)(5)(4)
Tr
1
zExternal dimensions (Unit : mm)
EMT3
(4)
0.22
(6)
1.2
1.6
0.13
(3)
0.5
1.0
1.6
(2)(5)
0.5
(1)
0.5
(4) (5) (6)
(3) (2) (1)
zAbsolute maximum ratings (Ta=25°C)
C
Limits
−60
−50
−6
−150
150(TOTAL)
300(TOTAL)
150
−55
to
+150
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMT3
IMT3A
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMT3
EMT6
T3
T2R
8000
IMT3A
SMT6
T3
T108
3000
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition frequency of the device.
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
Cob
−60
−50
−6
120
Unit
V
V
V
mA
∗1
mW
∗2
°C
°C
−
−
−
−
−
−
−
−
−
−
140
−
45pF
−
−
−
−
−0.1
−0.1
−0.5
560
−
ROHM : EMT6
IMT3A
ROHM : SMT6
EIAJ : SC-74
Unit
V
C
=−50µA
I
V
C
=−1mA
I
V
I
E
=−50µA
µA
V
CB
µA
EB
V
V
C/IB
I
−
V
MHz
CE
V
CE
CE
V
Each lead has same dimensions
)(
)
6
1
(
(
0.3
0.15
0.3Min.
)(
5
)
4
1.6
2.8
0.95
)
1.9
2
(
0.95
)
3
(
0.8
0~0.1
Each lead has same dimensions
Conditions
=−60V
=−6V
=−50mA/−5mA
=−6V, IC=−1mA
=−12V, IE=2mA, f=100MHz
=−12V, IE=0A, f=1MHz
2.9
1.1
∗
Rev.A 1/2
Transistors
zElectrical characteristics curves
−50
Ta=100˚C
25˚C
−20
mA)
COLLECTOR CURRENT : Ic (
−40˚C
−10
−5
−2
−1
−0.5
−0.2
−0.1
−0.2
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (
Fig.1 Grounded emitter propagation
characteristics
500
Ta=25˚C
200
100
DC CURRENT GAIN : hFE
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (
VCE= −5V
Fig.4 DC current gain vs.
collector current (I)
−1
V)
(
CE(sat)
−0.5
−0.2
Ta=100˚C
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : V
25˚C
−40˚C
COLLECTOR CURRENT : IC (
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
−3V
−1V
VCE= −6V
V)
mA)
lC/lB=10
mA)
EMT3 / IMT3A
−10
Ta=25˚C
−8
mA)
(
C
−6
−4
−2
COLLECTOR CURRENT : I
−0.8 −1.6 −2.0
−0.4
COLLECTOR TO MITTER VOLTAGE : VCE (
−35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5µA
−1.20
Fig.2 Grounded emitter output
characteristics (I)
500
FE
200
100
50
DC CURRENT GAIN : h
−0.2 −0.5 −1 −2 −5 −10 −20 −50−100
Ta=100˚C
25˚C
−40˚C
VCE= −6V
COLLECTOR CURRENT : IC (
mA)
Fig.5 DC current gain vs.
collector current (II)
1000
500
MHz)
(
T
200
100
50
TRANSITION FREQUENCY : f
12 510
EMITTER CURRENT : I
Fig.8 Gain bandwidth product vs.
emitter current
Ta=25˚C
V
E
(
mA)
CE
= −
50 1000.5 20
I
B
=0
12V
−100
Ta=25˚C
)
−500
mA
(
−450
−80
C
−400
−350
−300
−60
−40
−20
COLLECTOR CURRENT : I
0
V)
COLLECTOR TO EMITTER VOLTAGE : VCE (
Fig.3 Grounded emitter output
characteristics (II)
−1
V)
(
CE(sat)
−0.5
−0.2
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : V
IC/IB=
50
20
10
COLLECTOR CURRENT : IC (
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
20
pF)
pF)
10
5
2
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
EMITTER TO BASE VOLTAGE : V
Cib
Cob
−1 −2 −5 −10
−0.5 −20
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
−250
−200
−150
−100
−50µA
IB=0
Ta=25˚C
mA)
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
EB
(V)
−5−3 −4−2−1
V)
Rev.A 2/2
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