ROHM EMT18, UMT18N, IMT18 Technical data

General purpose transistors(dual transistors)

EMT18 / UMT18N / IMT18

Features Dimensions (Unit : mm)

1) Two 2SA2018 chips in a EMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.

3) Transistor elements are independent, eliminating
interference.

Structure

Epitaxial planar type
PNP silicon transistor

The following characteristics apply to both Tr

1 and Tr2.

Inner circuit

EMT18 / UMT18N

(3)

(2)

(1)

IMT18

(4)

(5)

(6)

EMT18

ROHM : EMT6

UMT18N

ROHM : UMT6
EIAJ : SC-88

IMT18

Each lead has same dimensions

Abbreviated symbol : T18

Each lead has same dimensions

Abbreviated symbol : T18

Tr

Tr

2

(4)

1

Tr

2

(5)

(6)

(3)

Tr

1

(2)

(1)

Absolute maximum ratings (Ta=25C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Storage temperature

∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
∗3 200mW per element must not be exceeded.

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

EMT6
UMT6

P

C

SMT6

Tj 150

Tstg

Limits

−15

−12

−6

−500

1.0
150 (TOTAL)
300 (TOTAL)

−55 to +150

Each lead has same dimensions

ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457

Abbreviated symbol : T18

Unit

V
V
V

mA

∗1

A

∗2

mW

∗3

°C
°C

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2010 ROHM Co., Ltd. All rights reserved.

2010.08 - Rev.C

1000

.5

)

COLLECTOR CURRENT : I

(mA)

n

Characteristics

1000

0

DC CURRENT GAIN : h

Collector Current

1000

0

COLLECTOR SATURATION

n

Electrical characteristics (Ta=25C)

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cutoff current I

Transition frequency f
Output capacitance Cob − 6.5 − pF

Packaging specifications and hFE

Package name

Type

Code

Basic ordering unit (pieces)
EMT18
UMT18N
IMT18

Electrical characteristic curves

500

200

C

Ta=125∞C
Ta=25∞C

100

Ta= −40∞C

50

20
10

5

2
1

0 0.5 1.0 1

BASE TO EMITTER VOLTAGE : V

Fig.1 Grounded Emitter Propagatio

Symbol Min. Typ. Max. Unit Conditions

BV

−15 −−VIC= −10μA

CBO

−12 −−V

CEO

−6 −−V

EBO

−−−0.1 μA

CBO

−−−0.1 μA

EBO

CE (sat)

−−100 −250 mV

270 − 680 −

FE

− 260 − MHz

T

Taping

T2R

8000

−

TR

3000

−

T110
3000

−

−

−−

VCE=2V

BE

(V

500

FE

200

Ta=125∞C

100

Ta=25∞C
Ta= −40∞C

50

20
10

5

2
1

1 2 5 10 20 50 100 200 500100

COLLECTOR CURRENT : I

Fig.2 DC Current Gain vs.

I

= −1mA

C

I

= −10μA

E

V

= −15V

CB

= −6VEmitter cutoff current I

V

CB

/ IB= −200mA / −10mACollector-emitter saturation voltage V

I

C

V

= −2V, IC= −10mADC current transfer ratio h

CE

= −2V, IE=10mA, f=100MHz

V

CE

= −10V, IE=0A, f=1MHz

V

CB

VCE=2V

(mA)

C

Data Sheet EMT18 / UMT18N / IMT18

500

200
100

Ta=125°C

(mV)

Ta=25°C

50

Ta= −40°C

CE (sat)

20
10

5

VOLTAGE : V

2
1

1 2 5 10 20 50 100 200 500100

COLLECTOR CURRENT : I

Fig.3 Collector-Emitter Saturatio

Voltage vs.
Collector Current (Ι)

IC / IB=20

(mA)

C

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2010 ROHM Co., Ltd. All rights reserved.

2010.08 - Rev.C