ROHM EMT1, UMT1N, INT1A Technical data

EMT1 / UMT1N / IMT1A

Transistors

General Purpose Transistor

(Isolated Dual Transistors)

EMT1 / UMT1N / IMT1A

zFeatures

1)Two 2SA1037AK chips in a EMT or UMT or SMT package.

2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.

3)Transistor elements are independent,

eliminating interference.

zStructure

Epitaxial planar type PNP silicon transistor

zEquivalent circuit

EMT1 / UMT1N			IMT1A
(3)	(2)	(1)	(4)	(5)	(6)
Tr2		Tr1	Tr2		Tr1
(4)	(5)	(6)	(3)	(2)	(1)

The following characteristics apply to both

Tr1 and Tr2.

zAbsolute maximum ratings (Ta = 25°C)

	Parameter		Symbol	Limits	Unit
	Collector-base voltage		VCBO	−60	V
	Collector-emitter voltage		VCEO	−50	V
	Emitter-base voltage		VEBO	−6	V
	Collector current		IC	−150	mA
	Collector	EMT1, UMT1N		150 (TOTAL)		1
	power		PC		mW	2
		IMT1A		300 (TOTAL)
	dissipation
	Junction temperature		Tj	150	°C
	Storage temperature		Tstg	−55 to +150	°C

1 120mW per element must not be exceeded.2 200mW per element must not be exceeded.

zDimensions (Unit : mm)

EMT1

(6) (5) (4)

(1) (2) (3)

Each lead has same dimensions

ROHM : EMT6 Abbreviated symbol : T1

UMT1N

(6) (5) (4)

(1) (2) (3)

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88 Abbreviated symbol : T1

IMT1A

(4)

(5)

(6)

(3) (2) (1)

Each lead has same dimensions

ROHM : SMT6

EIAJ : SC-74 Abbreviated symbol : T1

Rev.C 1/3

Transistors

EMT1 / UMT1N / IMT1A

zElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

BVCBO

−60

−

−

V

IC = −50µA

Collector-emitter breakdown voltage

BVCEO

−50

−

−

V

IC = −1mA

Emitter-base breakdown voltage

BVEBO

−6

−

−

V

IE = −50µA

Collector cutoff current

ICBO

−

−

−0.1

µA

VCB = −60V

Emitter cutoff current

IEBO

−

−

−0.1

µA

VEB = −6V

Collector-emitter saturation voltage

VCE(sat)

−

−

−0.5

V

IC/IB = −50mA/−5mA

DC current transfer ratio

hFE

120

−

560

−

VCE = −6V, IC = −1mA

Transition frequency

fT

−

140

−

MHz

VCE = −12V, IE = 2mA, f = 100MHz

Output capacitance

Cob

−

4

5

pF

VCB = −12V, IE = 0A, f = 1MHz

zPackaging specifications

Package

Taping

Code

T2R

TN

T110

Type

Basic ordering unit (pieces)

8000

3000

3000

EMT1

−

−

UMT1N

−

−

IMT1A

−

−

zElectrical characteristic curves												-35.0
	-50							-10
						VCE = −6V			Ta = 25°C
	Ta = 100°C											-31.5
(mA)Ic							(mA)IC
	-10	25°C
	-20											-28.0
		−40°C						-8
:							:					-24.5
CURRENT	-5						CURRENT	-6				-21.0
	-2											-17.5
												-14.0
COLLECTOR							COLLECTOR	-4
	-1											-3.5µA
												-10.5
	-0.5							-2				-7.0
	-0.2
	-0.1											IB = 0
		-0.4 -0.6	-0.8	-1.0	-1.2	-1.4 -1.6		0	-0.4	-0.8	-1.2	-1.6	-2.0
	-0.2

BASE TO EMITTER VOLTAGE : VBE (V)	COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation	Fig.2 Grounded emitter output
characteristics	characteristics ( Ι )

	-100	Ta = 25°C
(mA)
		-500
	-80	-450
: IC
		-400
CURRENT		-350
	-60	-300			-250
					-200
COLLECTOR	-40				-150
					-100
	-20				-50µA
					IB = 0
	0	-1	-2	-3	-4	-5

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.3 Grounded emitter output characteristics ( ΙΙ )

	500										500		Ta = 100°C							(V)	-1
					VCE = -5V
	Ta = 25°C																										Ta = 25°C
																				VCE(sat)
						-3V									25°C
						-1V
GAIN : hFE										GAIN : hFE					-40°C					VOLTAGE :	-0.5
	200										200
																					-0.2
DC CURRENT										DC CURRENT	100									COLLECTOR SATURATION
																							IC/IB = 50
	100
																					-0.1			20
											50													10
	50																				-0.05
																	VCE = -6V
	-0.2	-0.5	-1	-2	-5	-10	-20	-50	-100		-0.2	-0.5	-1	-2	-5	-10	-20	-50	-100		-0.2	-0.5	-1	-2	-5	-10	-20	-50	-100
																						COLLECTOR CURRENT : IC (mA)
		COLLECTOR CURRENT : IC (mA)										COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector current ( Ι )

Fig.5 DC current gain vs. collector	Fig.6 Collector-emitter saturation
current ( ΙΙ )	voltage vs. collector current ( Ι )

Rev.C 2/3