ROHM EML4, UML4N Schematic [ru]

EML4 / UML4N

Transistors

General purpose transistor
(isolated transistor and diode)

EML4 / UML4N

2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package.

zApplications

DC / DC converter
Motor driver

zFeatures

1) Tr : Low V
Di : Low V

CE(sat)
F

2) Small package

zStructure

PNP Silicon epitaxial plana r transistor
Schottky barrier diode

The following characteristics apply to both Di1 and T r2.

zEquivalent circuit

(4)(5)

Tr2Di1

(1) (2) (3)

zPackaging specifications

Type EML4

Package

Marking

Code

Basic ordering unit(pieces)

EMT5

T2R

8000

UML4N

L4

UMT5

L4

TR

3000

Rev.C 1/4

zDimensions (Unit : mm)

EMT5

1.6

1.0

0.5

0.5

(4)

(5)

(3)

(2)

(1)

0.22

1pin mark

Each lead has same dimensions

Abbreviated symbol : L4

ROHM : EMT5

UMT5

1pin mark

ROHM : UMT5
EIAJ : SC-88A

2.0

1.3

0.65

0.65

(5)

(4)

(1)

(2)

(3)

0.2

Each lead has same dimensions

Abbreviated symbol : L4

0.5

1.2

1.6

0.13

0.9

0.7

2.1

1.25

0.15

0.1Min.

EML4 / UML4N

Transistors

zAbsolute maximum ratings (Ta=25°C)
Di1

Parameter Symbol
Average rectified forward current
F

orward current surge peak (60HZ, 1∞)
Reverse voltage (DC)
Junction temperature

Tr2

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature

∗ Each terminal mounted on a recommended.

Parameter Symbol

Di1 / DTr2

Parameter Symbol
Power dissipation
Storage temperature

∗ Each terminal mounted on a recommended.

zElectrical characteristics (T a=25°C)
Di1

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current

Tr2

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-emitter breakdown voltage

Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain

Transition frequency
Collector output capacitance

Limits

I

I

FSM

V

Tj

O

R

200

1

30

125

Limits

CBO

V
V

CEO

V

EBO

I

C

I

CP

Pd

Tj

−15

−12

−6

−500

−1

120
150

Limits

Pd

Tstg

CEO

BV
BV

CBO
EBO

BV

I

CBO

EBO

I

V

CE(sat)

FE

h

T

f

Cob − 6.5 −

150

−55 to +125

F

I

R

−12

−15

−6

270 − 680

−−

−−

−−100

−

Unit

mA

A
V

°C

Unit

V
V
V

mA

A

∗

mW

°C

Unit

∗

mW

°C

0.40 V IF=200mA

−

−

−−

−−

−−

260

0.50V

4.0 30

−100

−100

−250 mV

−

µA

V
V

V
nA VCB=−15V
nA VEB=−6V

− V

MHz

pF

V

R

=10V

C

=−1mA

I
I

C

=−10µA

I

E

=−10µA

IC=−200mA, IB=−10mA

CE

=−2V, IC=−10mA
VCE=−2V, IE=10mA, f=100MHz
V

CB

=−10V, IE=0mA, f=1MHz

Rev.C 2/4