ROHM EML20 Technical data
Transistors
z
z
z
z
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General purpose transistor
(isolated transistor and diode)
EML20
EML20
DTC123J
A and RB521S-30 are housed independently in a EMT6 package.
Applications
DC / DC converter
Motor driver
Features
1) Tr : NPN digital transistor
Di : Low V
F
2) Mounting possible with EMT3 automatic mounting
machines.
Structure
NPN Silicon epitaxial planar digital transistor
Schottky barrier diode
The following characteristics apply to both Di1 and DTr2.
z
Equivalent circuit
(4)(5)(6)
External dimensions (Unit : mm)
EMT6
1.6
1.0
0.5
0.5
(5)
(6)
(4)
1.2
(2)
(1)
1pin mark
ROHM : EMT6
(3)
0.22
Each lead has same dimensions
Abbreviated symbol : L20
0.5
1.6
0.13
R1
DTr2Di1
R2
(3)(2)(1)
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Packaging specifications
Type EML20
Package
Marking
Code
Basic ordering unit (pieces)
! R1=2.2k:, R2=47k:
EMT6
L20
T2R
8000
1/3
Transistors
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Absolute maximum ratings (T a=25qC)
Di1
Parameter Symbol
Average revtified forward current
Forward current surge peak (60Hz, 1∞)
Reverse voltage (DC)
Junction temperature
DTr2
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
∗ Each terminal mounted on a recommended.
Di1 / DTr2
Parameter Symbol
Power dissipation
Storage temperature
Each terminal mounted on a recommended.
∗
CC
V
IN
V
I
O
C (MAX.)
d
P
Tj 150 °C
d
P
Tstg
Limits
I
I
FSM
V
Tj
O
R
200
125
Limits
50 V
12
−5
100
100
120
Limits
150 mW ∗
−55 to +125
30
EML20
Unit
mA
1
Unit
mA
mAI
mW
Unit
A
V
°C
V
∗
°C
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Electrical characteristics (Ta=25qC)
Di1
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
DTr2
Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency ∗
Input resistance
Resistance ratio
∗
Characteristics of built-in transistor.
V
F
R
I
Vl
(off)
(on)
VI
Vo
(on)
II −
O(off)
I
I
G
T
f
1
R
2/R1
R
− 0.40 0.50 V IF=200mA
4.0 30
−
− − 0.5 V
1.1
−
−−
100 300
− 3.6
−−
500
80 −
−
250
1.54 2.2 2.86
21
17
μAVR=10V
mV
mA
nA
−
− MHz
kΩ
26
CC
=5V / Io=100uA
V
O
=0.3V / Io=5mA
V
V
O
=5mA, II=0.25mA
I
I
=5V
V
VCC=50V / VI=0V
−
VO=5V / Io=10mA
VCE=10V / IE= −5mA, f=100MHz
−−
−
2/3
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