ROHM EML17 Technical data

Transistors

General purpose transistor
(isolated transistor and diode)

EML17

DTA144E and a RB520G-30 are housed independently in a EMT package.

zApplica tions

DC / DC converter
Motor driver

zFeatures

1) Tr : Degital Transistor
Di : Low V

F

2) Small package

zStructure

Silicon epitaxial planar degital transistor
Schottky barrier diode

zEquivalent circuit

zExternal dimensions (Unit : mm)

EML17

1.6

1.0

0.5

(5)

(2)

(1)

0.22

1pin mark

0.5

0.5

(4)

1.2

1.6

(3)

0.13

Each lead has same dimensions

EML17

(5)

Di1

R1=R2=47kΩ

(4)

Tr2

R1

R2

(2)(1)

(3)

zPackaging specifications

Type EML17
Package
Marking

Code

Basic ordering unit (pieces)

EMT5

L17

T2R

8000

1/3

Transistors

zAbsolute maximum ratings (Ta=25°C)
Di1

Parameter Symbol

DC current voltage
Mean rectifying current
Forward peak surge current (60H
Junction temperature
Storage temperature

∗

60Hz, 1

Tr2

Parameter Symbol
Supply voltage
Input voltage

Output current
Power dissipation

Junction temperature

Di1, Tr2

Parameter Symbol
Power dissipation
Range of storage temperature

∗ Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)
Di1

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current

∗ Please pay attention to static electricity when handling.

Tr2

Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio
Transition frequency

∗ Transition frequency of the device

Z

1cyc.)

Limits

V

V

I

I

C(MAX)

CC

IN

O

−50

−40 to +10

−30

−100

Pd 120 mW

Tj

150

Pd

Tstg

R

V

I

O

I

FSM

Tj

Tstg

Unit

mA

°C

Limits

150

−55 to +125

F

I

R

I(off)

V

I(on)

V

O(on)

V

I

I

O(off)

I

1

G

1

R

2/R1

R

f

T

Limits

30
100
500
125

−40 to +125

V
V

Unit

∗

mW

°C

− VIF=10mA

−

− 0.5

−

−

−3.0

−

−−

−−

68 −

32.9 47 61.1

0.8

− 250 −

−−0.5 I

−−

−0.1 −0.3

1

Unit

V
mA
mA

°C
°C

0.45V

−0.18

−0.5

−−

1.2

EML17

V

R

µA

mA VI= −5V

µAVCC= −50V, VI=0V

kΩ−

MHz

=10V

C

= −5V, IO= −100µA

V

V

O

= −0.3V, IO= −2mA

V

I

O/II

= −10mA/ −0.5mA

VO= −5V, IO= −5mA

−

V

CE

= −10V, IE=5mA, f=100MHz

−

∗

2/3