ROHM EMG9, FMG9A, UMG9N Schematic [ru]

EMG9 / UMG9N / FMG9A

Transistors

Emitter common
(dual digital transistors)

EMG9 / UMG9N / FMG9A

zFeatures

1) Two DTC1 14E in a EMT or UMT or SMT p ackage.

2) Mounting cost and area can be cut in half.

zStructure

Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)

The following characteristics apply to both the DTr
DTr

2.

1 and

zEquivalent circuit

EMG9 / UMG9N FMG9A

DTr

R

1

2

(4)

(3) (2) (1)

R2R

2

(5)

R
DTr

1

R1=10kΩ

2

R

1

=10kΩ

DTr

R

1
2

(2)

(3) (4) (5)

R2R

2

(1)

R
DTr

1

1

R1=10kΩ

2

=10kΩ

R

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol

Supply voltage

Input voltage

Output current

Power
dissipation

EMG9, UMG9N 150 (TOTAL)
FMG9A 300 (TOTAL)

C (Max.)

I

Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

V

CC

V

O

I

Pd

Tj 150 ˚C

Tstg −55 to +150 ˚C

Limits

Unit

50 V

IN

40

−10
50

100

V

mA

mW

∗
∗

Rev.A 1/2

zExternal dimensions (Unit : mm)

EMG9

(4)

0.22

(5)

1.2

1.6

0.13

ROHM : EMT5

Abbreviated symbol : G9

UMG9N

)

4

(

0.2

)

5

(

1.25

2.1

0.15

0.1Min.

0to0.1

ROHM : UMT5
EIAJ : SC-88A

Abbreviated symbol : G9

FMG9A

)

2

(

0.3

)

1

(

1.6

2.8

0.15

0.3to0.6

0to0.1

ROHM : SMT5
EIAJ : SC-74A

Abbreviated symbol : G9

1
2

(3)

0.5

1.0

1.6

(2)

0.5

(1)

0.5

Each lead has same dimensions

)

3

(

)

0.65

2

(

1.3

2.0

)

0.65

1

(

0.9

0.7

Each lead has same dimensions

)

3

(

0.95

2.9

1.9

)

4

(

0.95

)

5

(

1.1

0.8

Each lead has same dimensions

EMG9 / UMG9N / FMG9A

Transistors

zElectrical characteristics (Ta = 25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Transition frequency of the device

∗

zPackaging specifications

Package
Code TR T148

Type

Basic ordering

unit (pieces)
EMG9
UMG9N
FMG9A

zElectrical characteristic curves

100

50

20

(V)

I (on)

10

5

2

1

500m

INPUT VOLTAGE : V

200m
100m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

Ta=−40˚C

25˚C

100˚C

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current
(ON characteristics)

O

(A)

VO=0.3V

1

500m

(V)

200m

O (on)

100m

50m

20m
10m

5m

OUTPUT VOLTAGE : V

2m
1m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m

OUTPUT CURRENT : I

Ta=100˚C

Fig.4 Output voltage vs. output
current

25˚C

−40˚C

O

lO/lI=20

(A)

Rev.A 2/2

V
V

V

I

O (off)

G

R

R2/R

T2R

8000

Min.

Typ. Max. Unit Conditions

−

I (off)

I (on)

O (on)

I

I

f

T

I

1

1

−

3

−

−

0.1

−

−

−

−

30

−

− 250 − V

7

10

0.8

1.0

Taping

3000 3000

10m

5m

2m

(A)

1m

500µ
200µ

100µ

50µ
20µ

10µ

OUTPUT CURRENT : Io

5µ
2µ

1µ

0 3.0

Fig.2 Output current vs. input voltage
(OFF characteristics)

0.5

−

0.3

0.88

0.5

−

mA

µA

V

V

V

O

V

I
V
V

−

V

MHz

kΩ

13

−−

1.2

Ta=100˚C

25˚C

−40˚C

0.5 1.0 1.5 2.0 2.5

INPUT VOLTAGE : V

CC

O

=

=10

I

=

CC

O

=

CE

I (off)

=

5V, I

O

=

0.3V, I

O

=10

mA, I

I

=

5V

=

50V, V

I

5V, I

O

=5

=

10V, I

E

=

−5mA, f=100MHz

VCC=5V

(V)

100µA

mA

0.5mA

=

0V

mA

−

∗

1k

500

I

200

100

50

20

10

5

DC CURRENT GAIN : G

2
1

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m

Fig.3 DC current gain vs. output
current

Ta=100˚C

25˚C

−40˚C

OUTPUT CURRENT : I

VO=5V

O

(A)