ROHM EMG8, UMG8N Schematic [ru]

Datasheet

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

EMG8 / UMG8N

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

l

Inner circuit

1) Built-In Biasing Resistors.

2) Two DTC143Z chips in one package.

3) Emitter(GND)-common type.

4) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit).

5) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

completely eliminating parasitic effects.

6) Only the on/off conditions need to be set for

operation, making the circuit design easy.

7) Lead Free/RoHS Compliant.

l

Application

Inverter circuit, Interface circuit, Driver circuit

l

Packaging specifications

EMT5

UMT5

8

8,000G88

3,000

G8

UMG8N

UMT5

2021

TR

180

EMG8

EMT5

1616

T2R

180

Part No.

Package

Package

size

(mm)

Taping

code

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

Parameter

Tr1 and Tr2

V

CC

50V

I

C(MAX.)

100mA

R

1

4.7kW

R

2

47kW

EMG8

(SC-107BB)

UMG8N

SOT-353 (SC-88A)

(4)

OUT

IN

(3)

GND

(2)

(5)

OUT

IN

(1)

(2)

(1)

(3)

(4)

(5)

(5)

(1)

(2)

(4)

(3)

1/6

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMG8 / UMG8N

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Supply voltage

Input voltage

Output current

Collector current

Power dissipation

Junction temperature

Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

MHz

Transition frequency

fT

*1

V

CE

= 10V, IE = -5mA,

f = 100MHz

-

250

-

kW

Resistance ratio

R2/R

1

-

81012

-

Input resistance

R

1

-

3.29

4.7

6.11

mA

DC current gain

G

I

VO = 5V, IO = 10mA

80--

-

Output current

I

O(off)

V

CC

= 50V, VI = 0V

--0.5

V

Input current

I

I

VI = 5V

--1.8

mA

Output voltage

V

O(on)

IO / II = 5mA / 0.25mA

-

0.1

0.3

V

V

I(on)

VO = 0.3V, IO = 5mA

1.3--

0.5

Input voltage

V

I(off)

V

CC

= 5V, IO = 100mA

-

-

Parameter

Symbol

Conditions

Unit

Min.

Typ.

Max.

T

j

150

°C

T

stg

-55 to +150

°C

I

C(MAX.)

*1

100

mA

150 (Total)

*3

mW

P

D

*2

V

IN

-5 to +30

V

I

O

100

mA

Parameter

Symbol

Values

Unit

V

CC

50

V

2/6

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMG8 / UMG8N

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Input voltage vs. output current
(ON characteristics)

INPUT VOLTAGE : V

I(on)

[V]

OUTPUT CURRENT : IO [A]

Fig.2 Output current vs. input voltage
(OFF characteristics)

OUTPUT CURRENT : I

O

[A]

INPUT VOLTAGE : V

I(off)

[V]

Fig.3 Output current vs. output voltage

OUTPUT CURRENT : I

O

[mA]

OUTPUT VOLTAGE : VO [V]

Fig.4 DC current gain vs. output current

DC CURRENT GAIN : G

I

OUTPUT CURRENT : IO [A]

0

20

40

60

80

100

0 5 10

250μA

0A

300μA

350μA

400μA

450μA

500μA

200μA

150μA

100μA

II=

Ta=25ºC

50μA

3/6

2012.06 - Rev.B