ROHM EMG4, FMG4A, UMG4N Schematic [ru]
EMG4 / UMG4N / FMG4A
General purpose (dual digital transistors)
EMG4 / UMG4N / FMG4A
!!!!!!!!!Transistors
zFeatures
1) Two DTC114T chips in a EMT or UMT or SMT
package.
zEquivalent circuit s
EMG4 / UMG4N
(1)(3) (2)
R
1
(4) (5)
R
1
=10kΩ R1=10kΩ
R
1
FMG4A
(5)(3) (4)
R
1
(2) (1)
R
1
zPackage, marking, andpackaging specifications
G4
TR
3000
FMG4A
SMT5
G4
T148
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMG4
EMT5
G4
T2R
8000
UMG4N
UMT5
zAbsolute maximum ratings (Ta=25qC)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Parameter Symbol
EMG4 / UMG4N
FMG4A
V
V
V
Tstg
Pd
CBO
CEO
EBO
I
C
Tj
Limits
50
50
5
100
150(TOTAL)
300(TOTAL)
150
−55
to
+150
Unit
mA
mW
zExternal dimensions (Unit : mm)
EMG4
ROHM : EMT5
UMG4N
0.2
0.15
0.1Min.
ROHM : UMT5
EIAJ : SC-88A
V
V
V
∗1
∗2
°C
°C
FMG4A
ROHM : SMT5
EIAJ : SC-74A
0.3
0.15
0.3Min.
(3)
0.22
0.13
(4)
(5)
0.5
1.0
1.6
(2)
0.5
(1)
1.2
1.6
0.5
Each lead has same dimensions
)
)
4
3
(
(
)
0.65
2
(
1.3
)
)
1
5
(
(
1.25
2.1
0~0.1
)
)
3
2
(
(
)
1
(
1.6
2.8
0~0.1
0.95
)(
4
(
0.95
)
5
2.0
0.65
0.9
0.7
Each lead has same dimensions
2.9
1.9
1.1
0.8
Each lead has same dimensions
Rev.A 1/2
zElectrical characteristics (Ta=25qC)
Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition frequency of the device.
zElectrical characteristics curves
1k
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
Ta=100°C
Fig.1 DC current gain vs. collector
current
25
−40°C
V
CE
=
5V
°C
C
(A)
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
(V)
CE(sat)
COLLECTOR SATURATION VOLTAGE : V
50
50
100
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
−
−
−
5
−
−
−
−
−
−
250
250
−
71013
Ta=100°C
25°C
−40°C
Fig.2 Collector-emitter saturation
voltage vs. collector current
EMG4 / UMG4N / FMG4A
Conditions
=50V
=4V
=10mA/1mA
=5V, IC=1mA
=10V, IE= −5mA, f=100MHz
−
0.5
0.5
0.3
600
−
−
−
−
lC/lB=10
C
(A)
Unit
V
V
V
μA
μA
V
−
MHz
kΩ
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
EB
V
I
C/IB
CE
V
V
CE
!!!!!!!!!Transistors
∗
Rev.A 2/2
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