ROHM EMG2, FMG2A, UMG2N Schematic [ru]
EMG2 / UMG2N / FMG2A
Transistors
Emitter common
(dual digital transistors)
EMG2 / UMG2N / FMG2A
zFeatures
1) Two DTC144E chips in a EMT or UMT or SMT
package.
2) Mounting cost and area can be cut in half.
zStructure
Dual NPN digital transistor
(each with a single built in resistors)
The following characteristics apply to both the DTr
DTr
2.
1 and
zEquivalent circuit
EMG2 / UMG2N FMG2A
DTr
R
1
2
(2)
(3) (4) (5)
R2R
2
(1)
R
DTr
1
1
R1=47kΩ
2
=47kΩ
R
(3) (2) (1)
R
1
DTr
2
(4)
R2R
R1=47kΩ
2
=47kΩ
R
R
1
2
DTr
1
(5)
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power
dissipation
EMG2, UMG2N 150 (TOTAL)
FMG2A 300 (TOTAL)
C (Max.)
I
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
Tstg −55 to +150 ˚C
V
CC
IN
V
O
I
Pd
Tj 150 ˚C
Limits
50 V
40
−10
30
100
Unit
V
mA
mW
Rev.A 1/2
zExternal dimensions (Unit : mm)
EMG2
(4)
0.22
(5)
1.2
1.6
0.13
ROHM : EMT5
Abbreviated symbol : G2
UMG2N
ROHM : UMT5
EIAJ : SC-88A
)
4
(
0.2
(5)
1.25
2.1
0.15
0.1Min.
0to0.1
Each lead has same dimensions
Abbreviated symbol : G2
FMG2A
ROHM : SMT5
EIAJ : SC-74A
)
2
(
0.3
)
1
(
1.6
2.8
0.15
0.3to0.6
0to0.1
Each lead has same dimensions
Abbreviated symbol : G2
1
∗
2
∗
(3)
0.5
1.0
1.6
(2)
0.5
(1)
0.5
Each lead has same dimensions
)
3
(
)
0.65
2
(
1.3
2.0
)
0.65
1
(
0.9
0.7
)
3
(
0.95
2.9
1.9
)
4
(
0.95
)
5
(
1.1
0.8
EMG2 / UMG2N / FMG2A
Transistors
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
∗
zPackaging specifications
Package
Code TR T148
Type
Basic ordering
unit (pieces)
EMG2
UMG2N
FMG2A
zElectrical characteristic curves
100
50
20
(V)
I (on)
10
Ta=−40˚C
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
25˚C
100˚C
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(on-characteristics)
1
500m
Ta=100˚C
(V)
200m
O (on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
25˚C
−40˚C
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output
current
R2/R
O
(A)
O
V
V
V
I
(A)
Min.
Typ. Max. Unit Conditions
−
I (off)
I (on)
O (on)
I
O (off)
G
f
R
I
I
T
1
1
−
3
−
−
0.1
−
−
−
−
68
−
− 250 − V
32.9
47
0.8
1
Taping
T2R
8000
VO=0.3V
lO/lI=20
3000 3000
CC
=
5V, I
O
=
O
=
O
=
10mA, I
I
=
5V
CC
O
=
CE
=
0.3V, I
=
50V, V
5V, I
10V, I
100µA
O
=2
mA
I
=
0.5mA
I
=
0V
O
=
5mA
E
=
−5mA, f=100MHz
−
0.5
−
0.3
0.18
0.5
−
mA
µA
V
V
V
V
I
V
V
−
V
MHz
kΩ
61.1
−−
1.2
10m
VCC=5V
5m
Ta=100˚C
2m
25˚C
(A)
1m
−40˚C
500µ
200µ
100µ
50µ
20µ
10µ
OUTPUT CURRENT : Io
5µ
2µ
1µ
0.5 1.0 1.5 2.0 2.5 3.00
INPUT VOLTAGE : V
Fig.2 Output current vs. input voltage
(off-characteristics)
I (off)
(V)
∗
1k
500
Ta=100˚C
200
100
DC CURRENT GAIN : GI
25˚C
−40˚C
50
20
10
5
2
1
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
VO=5V
Rev.A 2/2
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