ROHM EMF9 Technical data

EMF9

Transistors

Power management (dual transistors)

EMF9

2SC5585 and 2SK3019 are housed independently in a EMT6 package.

zApplication

Power management circ uit

zFeatures

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

zStructure

Silicon epitaxial planar transistor

zEquivalent circuit s

(1)(2)(3)

Tr2

(4) (5) (6)

Tr1

zPackaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

EMF9
EMT6

F9

T2R

8000

zDimensions (Units : mm)

(3)

ROHM : EMT6

Abbreviated symbol : F9

0.22

0.13

(4)

(6)

0.5

1.0

1.6

(2)(5)

0.5

(1)

1.2

1.6

0.5

Each lead has
same dimensions

Rev.A 1/5

EMF9

Transistors

zAbsolute maximum ratings (Ta=25°C)
Tr1

Collector-base voltage

Parameter Symbol

Collector-emitter voltage
Emitter-base voltage

Collector current
Junction temperature

Range of storage temperature

∗ Single pulse PW=1ms

CBO

V
V

CEO

V

EBO

I

I

CP

Tj

Tstg

C

Limits

15
12

6

500

1.0

150

−55~+150

Tr2

Drain-source voltage

Parameter

Gate-source voltage
Drain current

Reverse drain
current

Continuous

Pulsed

Continuous

Pulsed

Channel temperature
Range of storage temperature

∗ PW≤10ms Duty cycle≤50%

Symbol

DSS

V
V

GSS

I

DP

I
I

DR

I

DRP

Tch

Tstg

D

Limits

30
±20
100
200 mA
100 mA
200
150

−55~+150

Tr1, Tr2

D

Limits

150(TOTAL)

Parameter

Total power dissipation

∗ 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Symbol

P

zElectrical characteristics (T a=25°C)
Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions

CEO

Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

BV

CBO

BV

EBO

BV

CBO

I

EBO

I

CE(sat)

V

FE

h

f

T

Cob − 7.5 −

Tr2

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage

Static drain-source
on-state resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Symbol

I

GSS

(BR)DSS

V

DSS

I

V

GS(th)

DS(on)

R

|Y

fs

C

iss

C

oss

C

rss

t

d(on)

r

t

t

d(off)

f

t

|

Unit

V
V
V

mA

∗

A

°C
°C

Unit

V
V

mA

∗

∗

mA

°C
°C

Unit

∗

mW

12

−−

15

−−

6

−−

−−

−−

− 100

100
100
250 mV

270 − 680

320

−

Min. Typ. Max. Unit Conditions

−−

30

−−

−−

0.8

−

−

20

−

−

−

−

−

−

−

1.0 µA

1.5

−

58Ω
713Ω

−−mS V

13

9

4
15
35
80
80

MHz

−

±1 µA

−

− pF

− pF

− ns

−

− ns

− ns

V

I

C

=1mA

V

I

C

=10µA

V

I

E

=10µA
nA VCB=15V
nA VEB=6V

IC=200mA, IB=10mA

− V

CE

=2V, IC=10mA

VCE=2V, IE=−10mA, f=100MHz

CB

=10V, IE=0mA, f=1MHz

V

pF

VGS=±20V, VDS=0V

V

I

D

=10µA, VGS=0V

VDS=30V, VGS=0V

VV

DS

=3V, ID=100µA

ID=10mA, VGS=4V

D

=1mA, VGS=2.5V

I

DS

=3V, ID=10mA

pF

DS

=5V, VGS=0V, f=1MHz

V

D

=10mA, VDD 5V,

I

ns

GS

=5V, RL=500Ω,

V
R

GS

=10Ω

Rev.A 2/5