ROHM EMF33 Schematic [ru]

EMF33

Transistors

Power management,
Dual-chip Bipolar Transistor

EMF33

zApplications zDimensions (Unit : mm)
Power management circ uit

zFeatures

1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are
housed independently in the EMT6 packa ge.

2) Power switching circuit in a single package.

3) Mounting cost and area can be cut in half.

zStructure

Epitaxial Plannar Silicon T ransistor

zPackaging specifications

zEquivalent circuit

EMT6

0.5

(6)

(2)

(1)

1pin mark

0.22

Abbreviated symbol : F33

1.6

1.0

0.5

(5)

(3)

0.5

(4)

1.2

1.6

0.13

Each lead has same dimensions

Type

Package
Code
Basic ordering unit (pieces)

Taping

T2R

8000

EMF33

zAbsolute maximum ratings (Ta=25°C)

<Tr1>

Parameter
Supply voltage
Input voltage
Collector current

∗ Characteristics of built-in transistor.

Symbol

CC

IN

I

C(max)

<Tr2>

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Reverse drain current

∗ PW≤10ms DUTY CYCLE≤50%

Continous
Pulsed
Continous
Pulsed

Symbol

DSS
GSS

I

D

I

DP

I

DR

I

DRP

<Tr1, Tr2 in common>

Parameter
Power dissipation
Junction temperature

Range of storage temperature

∗ Each terminal mounted on a recommended land.

Symbol

P

D

Tj

Tstg

Limits Unit

−12

−10 to +5

∗

−500

Limits Unit

30
±20
100

∗

∗

Limits Unit

150

∗

120
150

VV
VV

mA

VV

VV
mA
mA200
mA100
mA200

mW / TOTAL

mW / ELEMENT

°C
°C−55 to +150

Tr1

∗1 ESD protection diode
∗2 Body diode

1/R2

=1kΩ/10kΩ

Tr1 : R
Tr2 : MOS FET

(4)(5)(6)

∗1

Tr2
∗2

R

2

R

1

(3)(2)(1)

(1) Emitter
(2) Base
(3) Drain
(4) Source
(5) Gate
(6) Collector

Rev.A 1/4

Transistors

zElectrical characteristics (T a=25°C)

<Tr1>

Parameter Symbol

V

Input voltage
Output voltage

Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗ Characteristics of built-in transistor.

<Tr2>

Parameter Symbol

Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage

Static drain-source on-resistance
Forward transfer admittance

Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

I(off)

V

I(on)

V

O(on)

I

I

I

O(off)

I

∗

f

T

R1

R2/R1 8 10 12 −

I

GSS

V

(BR)DSS

I

DSS

V

GS(th)

R

DS(on)

Y

fs

C

iss

C

oss

C

rss

d(on)

t

r

t

d(off)

t

f

t

Min.

Typ. Max.

Unit

−−−0.3 V V

CC

Conditions

= −5V, IO= −100µA

−2.5 −−VVO= −0.3V, IO= −20mA

−−60 −300 mV VO= −100mA, II= −5mA

−−−6.4 mA VI= −5V

−−−0.5 uA VCC= −12V, VI= 0V

140

−−

− 260 −−V

−

= −5V, IO= −100mAG

V

O

= −10V, IE= 5mA, f=100MHz

CE

0.7 1 1.3 kΩ

Min.

Typ. Max.

−−±1 µAV

Unit

GS

Conditions

= ±20V, VDS=0V

30 −−−ID= 10µA, VGS=0A

−−1.0 µAVDS= 30V, VGS=0V

0.8 − 1.5 V VDS= 3V, ID=100µA

−

58

−

713

20 −−ms V

− 13 − pF

− 9 − pF

− 4 − pF

− 15 − ns

− 35 − ns

− 80 − ns

− 80 − ns

Ω

= 10mA, VGS= 4V

I

D

Ω

= 1mA, VGS= 2.5V

I

D

DS

V

DS

GS

V
f=1MHz

I

= 10mA

D

V

DD

V

GS

R

= 500Ω

L

R

GS

= 3V, ID= 10mA
= 5V

= 0V

= 5V

= 5V

= 10Ω

EMF33

Rev.A 2/4