DTA143T and 2SK3019 are housed independently in a EMT6 package.
Application Dimensions (Unit : mm)
Power management circuit
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Structure
Silicon epitaxial planar transistor
Inner circuits
(1)(2)(3)
Tr2
(4)(5)(6)
Tr1
Packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMF32
EMT6
F32
T2R
8000
UMF32
UMT6
F32
TR
3000
ROHM : EMT6
Abbreviated symbol : F32
)
5
(
0.2
0.15
0.1Min.
ROHM : UMT6
Abbreviated symbol : F32
(4)
0.22
(6)
1.2
1.6
0.13
)
)
3
4
(
(
)
)
6
1
(
(
1.25
2.1
(3)
0.5
(2)(5)
0.5
(1)
Each lead has
same dimensions
0.65
)
2
(
0.65
1pin mark
0.7
Each lead has
same dimensions
1.0
1.6
0.5
1.3
2.0
0.9
www.rohm.com
1/4
c
2010 ROHM Co., Ltd. All rights reserved.
○
2010.09 - Rev.A
d.
d.
Absolute maximum ratings (Ta=25C)
Tr1
ParameterSymbol
CBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 120mW per element must not be exceeded. Each terminal mounted on a recommended lan
V
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−50
−50
−5
−100
150(TOTAL)
150
−55 to +150
Tr2
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended lan
Symbol
DSS
V
V
GSS
I
D
DP
I
DR
I
I
DRP
P
D
Tch
Tstg
Limits
30
±20
100
200mA
100mA
200
150(TOTAL)
150
−55 to +150
Electrical characteristics (Ta=25C)
Tr1
ParameterSymbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Transition frequency of the device
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
1
f
T
Min.
−50
−50
−5
−
−
−
100
3.29
−
Tr2
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
GSS
I
V
(BR)DSS
I
DSS
GS(th)
V
DS(on)
R
fs
|Y
C
iss
oss
C
rss
C
d(on)
t
t
r
t
d(off)
t
f
|
Unit
V
V
V
mA
∗1
mW
°C
°C
Unit
V
V
mA
∗1
∗1
mA
∗2
mW
°C
°C
Typ.Max.UnitConditions
−
−
VI
−
−
V
−
−
V
−
−0.5
μA
−
−0.5
μA
−
−0.3
V
250
600
−
4.7
6.11−
kΩ
250
−
MHz
Min.Typ.Max.UnitConditions
−−
30
−−
−−
0.8
20
−
58Ω
−
713Ω
−
−−msV
−13−pF
9
−
4
−
15
−
35
−
−80−ns
80
−
C
=
−50μA
I
C
=
−1mA
I
E
=
−50μA
V
CB
=
−50V
V
EB
=
−4V
C/IB
=
−5mA/ −0.25mA
I
C
=
−1mA, V
CE
=
I
VCE= −10V, IE=5mA, f=100MHz
±1μA
1.0μA
1.5
−pF
−pF
−ns
−
−ns
−5V
VGS=±20V, VDS=0V
V
D
=10μA, VGS=0V
I
VDS=30V, VGS=0V
DS
VV
=3V, ID=100μA
ID=10mA, VGS=4V
I
D
=1mA, VGS=2.5V
DS
=3V, ID=10mA
DS
=5V, VGS=0V, f=1MHz
V
I
D
=10mA, VDD 5V,
ns
GS
=5V, RL=500Ω,
V
R
GS
=10Ω
Data SheetEMF32 / UMF32N
∗
www.rohm.com
2/4
c
2010 ROHM Co., Ltd. All rights reserved.
○
2010.09 - Rev.A
m
1k
current
m
COLLECTOR SATURATION VOLTAGE : V
(V)
5
s
4
s
)
0
channel temperature
5
)
)
0
15
e
voltage
Electrical characteristic curves
Tr1
V
CE
=−
C
(A)
Ta=25°C
Pulsed
5V
500
FE
200
100
50
20
10
DC CURRENT GAIN : h
−100μ−1m−10m−200μ−2m−20m−500μ−5m−50m −100
Ta=100°C
25°C
−40°C
5
2
1
COLLECTOR CURRENT : I
Fig.1
DC current gain vs. collector
Tr2
0.15
(A)
D
0.1
0.05
DRAIN CURRENT : I
4V
0
01234
DRAIN-SOURCE VOLTAGE : VDS (V)
3V
3.5V
2.5V
2V
VGS=1.5V
Data SheetEMF32 / UMF32N
−1
−500m
CE(sat)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100μ−1m
Ta=100°C
25°C
−40°C
−200μ−2m
−500μ−5m
COLLECTOR CURRENT : I
−10m
Fig.2 Collector-emitter saturation
voltage vs. collector current
200m
V
DS
=3V
100m
Pulsed
50m
(A)
D
20m
10m
5m
2m
1m
0.5m
DRAIN CURRENT : I
0.2m
0.1m
0
1
GATE-SOURCE VOLTAGE : VGS (V)
Ta=125°C
75°C
25°C
−25°C
2
−20m
C
3
lC/lB=20
−50m−100
(A)
2
(V
GS(th)
1.5
1
0.5
GATE THRESHOLD VOLTAGE : V
0
−500
−2525 50 75 100 125 15
CHANNEL TEMPERATURE : Tch (°C)
V
DS
I
D
=0.1mA
Pulsed
=3V
Fig.3 Typical output characteristic
Fig.4 Typical transfer characteristic
Fig.5 Gate threshold voltage vs.
50
(Ω)
DS(on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
Ta=125°C
20
10
0.5
5
2
1
0.001
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.10.20.
DRAIN CURRENT : ID (A)
V
GS
Pulsed
=4V
Fig.6 Static drain-source on-state
resistance vs. drain current ( Ι
50
Ta=125°C
20
DS(on) (Ω)
10
5
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.10.20.5
DRAIN CURRENT : ID (A)
VGS=2.5V
Pulsed
Fig.7 Static drain-source on-state
resistance vs. drain current ( ΙΙ
STATIC DRAIN-SOURCE
(Ω)
DS(on)
10
5
ON-STATE RESISTANCE : R
0
0510152
GATE-SOURCE VOLTAGE : VGS (V)
ID=0.1A
ID=0.05A
Fig.8 Static drain-source on-stat
resistance vs. gate-source
Ta=25°C
Pulsed
www.rohm.com
3/4
c
2010 ROHM Co., Ltd. All rights reserved.
○
2010.09 - Rev.A
F
resistance vs. channel temperature
.
.5
.
.5
0
drain-source voltage
0
Data SheetEMF32 / UMF32N
9
8
(Ω)
7
DS(on)
6
5
4
3
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
ID=100mA
ID=50mA
−50025150
−2550 75 100 125
CHANNEL TEMPERATURE : Tch (°C)
ig.9 Static drain-source on-state
200m
100m
50m
20m
10m
VGS=4V
5m
2m
1m
0.5m
REVERSE DRAIN CURRENT : IDR (A)
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
0V
10.50
VGS=4V
Pulsed
Ta=25°C
Pulsed
0.5
0.2
Ta=−25°C
0.1
0.05
0.02
0.01
0.005
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.002
0.001
0.0001
25°C
75°C
125°C
0.00020.0005 0.001 0.0020.0050.010.020.05
DRAIN CURRENT : ID (A)
V
DS
=3V
Pulsed
0.10.20.5
Fig.10 Forward transfer admittance vs
drain current
1
50
20
10
5
2
CAPACITANCE : C (pF)
1
0.5
0.1
0.20.512510 205
DRAIN-SOURCE VOLTAGE : VDS (V)
Ta=25°C
f=1MH
VGS=0V
C
iss
C
oss
C
rss
Z
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
REVERSE DRAIN CURRENT : IDR (A)
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
Ta=125°C
Fig.11 Reverse drain current vs
source-drain voltage ( Ι )
1000
500
200
100
50
20
10
SWITHING TIME : t (ns)
5
2
0.1
t
f
t
d(off)
t
r
t
d(on)
0.20.5 12510 20 50
DRAIN CURRENT : ID (mA)
75°C
25°C
−25°C
10.50
VGS=0V
Pulsed
Ta=25°C
V
DD
=5V
V
GS
=5V
R
G
=10Ω
Pulsed
1
10
Fig.12 Reverse drain current vs.
source-drain voltage ( ΙΙ )
Fig.13 Typical capacitance vs.
Fig.14 Switching characteristics
www.rohm.com
4/4
c
2010 ROHM Co., Ltd. All rights reserved.
○
2010.09 - Rev.A
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injur y, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.