ROHM EMF32 Technical data

N
EMF32 / UMF32N
DTA143T and 2SK3019 are housed independently in a EMT6 package.
Application Dimensions (Unit : mm) Power management circuit
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Structure
Silicon epitaxial planar transistor
Inner circuits
(1)(2)(3)
Tr2
(4) (5) (6)
Tr1
Packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMF32
EMT6
F32 T2R
8000
UMF32
UMT6
F32
TR
3000
ROHM : EMT6
Abbreviated symbol : F32
)
5
(
0.2
0.15
0.1Min.
ROHM : UMT6
Abbreviated symbol : F32
(4)
0.22
(6)
1.2
1.6
0.13
)
)
3
4
(
(
)
)
6
1
(
(
1.25
2.1
(3)
0.5
(2)(5)
0.5
(1)
Each lead has same dimensions
0.65
)
2
(
0.65
1pin mark
0.7
Each lead has same dimensions
1.0
1.6
0.5
1.3
2.0
0.9
www.rohm.com
1/4
c
2010 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
d.
d.
Absolute maximum ratings (Ta=25C) Tr1
Parameter Symbol
CBO
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
1 120mW per element must not be exceeded. Each terminal mounted on a recommended lan
V VCEO VEBO
IC
PC
Tj
Tstg
Limits
50
50
5
100
150(TOTAL)
150
55 to +150
Tr2
Parameter Drain-source voltage Gate-source voltage
Drain current Reverse drain
current
Continuous
Pulsed
Continuous
Pulsed Total power dissipation Channel temperature Range of storage temperature
1 PW10ms Duty cycle50%2 120mW per element must not be exceeded. Each terminal mounted on a recommended lan
Symbol
DSS
V V
GSS
I
D
DP
I
DR
I
I
DRP
P
D
Tch
Tstg
Limits
30 ±20 100 200 mA 100 mA 200
150(TOTAL)
150
55 to +150
Electrical characteristics (Ta=25C) Tr1
Parameter Symbol
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency
Transition frequency of the device
BV BV BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
1
f
T
Min.
50
50
5
100
3.29
Tr2
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage
Static drain-source on-state resistance
Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Symbol
GSS
I
V
(BR)DSS
I
DSS GS(th)
V
DS(on)
R
fs
|Y
C
iss
oss
C
rss
C
d(on)
t
t
r
t
d(off)
t
f
|
Unit
V V V
mA
1
mW
°C °C
Unit
V V
mA
1
1
mA
2
mW
°C °C
Typ. Max. Unit Conditions
VI
V
V
0.5
μA
0.5
μA
0.3
V
250
600
4.7
6.11
kΩ
250
MHz
Min. Typ. Max. Unit Conditions
−−
30
−−
−−
0.8
20
58Ω
713Ω
−−ms V
13 pF
9
4
15
35
80 ns
80
C
=
50μA
I
C
=
1mA
I
E
=
50μA
V
CB
=
50V
V
EB
=
4V
C/IB
=
5mA/ 0.25mA
I
C
=
1mA, V
CE
=
I
VCE= −10V, IE=5mA, f=100MHz
±1 μA
1.0 μA
1.5
pF
pF
ns
ns
5V
VGS=±20V, VDS=0V
V
D
=10μA, VGS=0V
I VDS=30V, VGS=0V
DS
VV
=3V, ID=100μA ID=10mA, VGS=4V I
D
=1mA, VGS=2.5V
DS
=3V, ID=10mA
DS
=5V, VGS=0V, f=1MHz
V
I
D
=10mA, VDD 5V,
ns
GS
=5V, RL=500Ω,
V R
GS
=10Ω
Data Sheet EMF32 / UMF32N
www.rohm.com
2/4
c
2010 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
m
1k
current
m
COLLECTOR SATURATION VOLTAGE : V
(V)
5
s
4
s
)
0
channel temperature
5
)
)
0
15
e
voltage
Electrical characteristic curves
Tr1
V
CE
=−
C
(A)
Ta=25°C Pulsed
5V
500
FE
200 100
50
20 10
DC CURRENT GAIN : h
100μ−1m 10m−200μ−2m 20m−500μ−5m 50m 100
Ta=100°C
25°C
40°C
5
2 1
COLLECTOR CURRENT : I
Fig.1
DC current gain vs. collector
Tr2
0.15
(A)
D
0.1
0.05
DRAIN CURRENT : I
4V
0
01234
DRAIN-SOURCE VOLTAGE : VDS (V)
3V
3.5V
2.5V
2V
VGS=1.5V
Data Sheet EMF32 / UMF32N
1
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
100μ−1m
Ta=100°C
25°C
40°C
200μ−2m
500μ−5m
COLLECTOR CURRENT : I
10m
Fig.2 Collector-emitter saturation
voltage vs. collector current
200m
V
DS
=3V
100m
Pulsed
50m
(A)
D
20m 10m
5m 2m
1m
0.5m
DRAIN CURRENT : I
0.2m
0.1m 0
1
GATE-SOURCE VOLTAGE : VGS (V)
Ta=125°C
75°C 25°C
25°C
2
20m
C
3
lC/lB=20
50m100
(A)
2
(V
GS(th)
1.5
1
0.5
GATE THRESHOLD VOLTAGE : V
0
50 0
25 25 50 75 100 125 15
CHANNEL TEMPERATURE : Tch (°C)
V
DS
I
D
=0.1mA
Pulsed
=3V
Fig.3 Typical output characteristic
Fig.4 Typical transfer characteristic
Fig.5 Gate threshold voltage vs.
50
(Ω)
DS(on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
Ta=125°C
20
10
0.5
5
2
1
0.001
75°C 25°C
25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0. DRAIN CURRENT : ID (A)
V
GS
Pulsed
=4V
Fig.6 Static drain-source on-state
resistance vs. drain current ( Ι
50
Ta=125°C
20
DS(on) (Ω)
10
5
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
75°C 25°C
25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A)
VGS=2.5V
Pulsed
Fig.7 Static drain-source on-state
resistance vs. drain current ( ΙΙ
STATIC DRAIN-SOURCE
(Ω)
DS(on)
10
5
ON-STATE RESISTANCE : R
0
0 5 10 15 2
GATE-SOURCE VOLTAGE : VGS (V)
ID=0.1A
ID=0.05A
Fig.8 Static drain-source on-stat
resistance vs. gate-source
Ta=25°C Pulsed
www.rohm.com
3/4
c
2010 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
F
resistance vs. channel temperature
.
.5
.
.5
0
drain-source voltage
0
Data Sheet EMF32 / UMF32N
9
8
(Ω)
7
DS(on)
6 5 4 3 2 1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
ID=100mA
ID=50mA
50 0 25 150
25 50 75 100 125
CHANNEL TEMPERATURE : Tch (°C)
ig.9 Static drain-source on-state
200m 100m
50m 20m
10m
VGS=4V
5m 2m
1m
0.5m
REVERSE DRAIN CURRENT : IDR (A)
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
0V
10.50
VGS=4V Pulsed
Ta=25°C Pulsed
0.5
0.2 Ta=−25°C
0.1
0.05
0.02
0.01
0.005
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.002
0.001
0.0001
25°C 75°C
125°C
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 DRAIN CURRENT : ID (A)
V
DS
=3V
Pulsed
0.1 0.2 0.5
Fig.10 Forward transfer admittance vs
drain current
1
50
20
10
5
2
CAPACITANCE : C (pF)
1
0.5
0.1
0.2 0.5 1 2 5 10 20 5
DRAIN-SOURCE VOLTAGE : VDS (V)
Ta=25°C
f=1MH VGS=0V
C
iss
C
oss
C
rss
Z
200m 100m
50m 20m
10m
5m 2m
1m
0.5m
REVERSE DRAIN CURRENT : IDR (A)
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
Ta=125°C
Fig.11 Reverse drain current vs
source-drain voltage ( Ι )
1000
500
200 100
50
20 10
SWITHING TIME : t (ns)
5
2
0.1
t
f
t
d(off)
t
r
t
d(on)
0.2 0.5 1 2 5 10 20 50 DRAIN CURRENT : ID (mA)
75°C 25°C
25°C
10.50
VGS=0V
Pulsed
Ta=25°C
V
DD
=5V
V
GS
=5V
R
G
=10Ω
Pulsed
1
10
Fig.12 Reverse drain current vs.
source-drain voltage ( ΙΙ )
Fig.13 Typical capacitance vs.
Fig.14 Switching characteristics
www.rohm.com
4/4
c
2010 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specications, which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injur y, re or any other damage caused in the event of the failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel­controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specied herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/contact/
R1010
A
Loading...