ROHM EMF32 Technical data
N
Power management (dual transistors)
EMF32 / UMF32N
DTA143T and 2SK3019 are housed independently in a EMT6 package.
Application Dimensions (Unit : mm)
Power management circuit
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Structure
Silicon epitaxial planar transistor
Inner circuits
(1)(2)(3)
Tr2
(4) (5) (6)
Tr1
Packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMF32
EMT6
F32
T2R
8000
UMF32
UMT6
F32
TR
3000
ROHM : EMT6
Abbreviated symbol : F32
)
5
(
0.2
0.15
0.1Min.
ROHM : UMT6
Abbreviated symbol : F32
(4)
0.22
(6)
1.2
1.6
0.13
)
)
3
4
(
(
)
)
6
1
(
(
1.25
2.1
(3)
0.5
(2)(5)
0.5
(1)
Each lead has
same dimensions
0.65
)
2
(
0.65
1pin mark
0.7
Each lead has
same dimensions
1.0
1.6
0.5
1.3
2.0
0.9
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c
2010 ROHM Co., Ltd. All rights reserved.
○
2010.09 - Rev.A
d.
d.
Absolute maximum ratings (Ta=25C)
Tr1
Parameter Symbol
CBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 120mW per element must not be exceeded. Each terminal mounted on a recommended lan
V
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−50
−50
−5
−100
150(TOTAL)
150
−55 to +150
Tr2
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended lan
Symbol
DSS
V
V
GSS
I
D
DP
I
DR
I
I
DRP
P
D
Tch
Tstg
Limits
30
±20
100
200 mA
100 mA
200
150(TOTAL)
150
−55 to +150
Electrical characteristics (Ta=25C)
Tr1
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Transition frequency of the device
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
1
f
T
Min.
−50
−50
−5
−
−
−
100
3.29
−
Tr2
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
GSS
I
V
(BR)DSS
I
DSS
GS(th)
V
DS(on)
R
fs
|Y
C
iss
oss
C
rss
C
d(on)
t
t
r
t
d(off)
t
f
|
Unit
V
V
V
mA
∗1
mW
°C
°C
Unit
V
V
mA
∗1
∗1
mA
∗2
mW
°C
°C
Typ. Max. Unit Conditions
−
−
VI
−
−
V
−
−
V
−
−0.5
μA
−
−0.5
μA
−
−0.3
V
250
600
−
4.7
6.11 −
kΩ
250
−
MHz
Min. Typ. Max. Unit Conditions
−−
30
−−
−−
0.8
20
−
58Ω
−
713Ω
−
−−ms V
− 13 − pF
9
−
4
−
15
−
35
−
− 80 − ns
80
−
C
=
−50μA
I
C
=
−1mA
I
E
=
−50μA
V
CB
=
−50V
V
EB
=
−4V
C/IB
=
−5mA/ −0.25mA
I
C
=
−1mA, V
CE
=
I
VCE= −10V, IE=5mA, f=100MHz
±1 μA
1.0 μA
1.5
− pF
− pF
− ns
−
− ns
−5V
VGS=±20V, VDS=0V
V
D
=10μA, VGS=0V
I
VDS=30V, VGS=0V
DS
VV
=3V, ID=100μA
ID=10mA, VGS=4V
I
D
=1mA, VGS=2.5V
DS
=3V, ID=10mA
DS
=5V, VGS=0V, f=1MHz
V
I
D
=10mA, VDD 5V,
ns
GS
=5V, RL=500Ω,
V
R
GS
=10Ω
Data Sheet EMF32 / UMF32N
∗
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c
2010 ROHM Co., Ltd. All rights reserved.
○
2010.09 - Rev.A
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