ROHM EMF32 Technical data

N

Power management (dual transistors)

EMF32 / UMF32N

DTA143T and 2SK3019 are housed independently in a EMT6 package.

Application Dimensions (Unit : mm)
Power management circuit

Features

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

Structure

Silicon epitaxial planar transistor

Inner circuits

(1)(2)(3)

Tr2

(4) (5) (6)

Tr1

Packaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

EMF32

EMT6

F32
T2R

8000

UMF32

UMT6

F32

TR

3000

ROHM : EMT6

Abbreviated symbol : F32

)

5

(

0.2

0.15

0.1Min.

ROHM : UMT6

Abbreviated symbol : F32

(4)

0.22

(6)

1.2

1.6

0.13

)

)

3

4

(

(

)

)

6

1

(

(

1.25

2.1

(3)

0.5

(2)(5)

0.5

(1)

Each lead has
same dimensions

0.65

)

2

(

0.65

1pin mark

0.7

Each lead has
same dimensions

1.0

1.6

0.5

1.3

2.0

0.9

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2010.09 - Rev.A

d.

d.

Absolute maximum ratings (Ta=25C)
Tr1

Parameter Symbol

CBO

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature

∗1 120mW per element must not be exceeded. Each terminal mounted on a recommended lan

V
VCEO
VEBO

IC

PC

Tj

Tstg

Limits

−50

−50

−5

−100

150(TOTAL)

150

−55 to +150

Tr2

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Reverse drain

current

Continuous

Pulsed

Continuous

Pulsed
Total power dissipation
Channel temperature
Range of storage temperature

∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended lan

Symbol

DSS

V
V

GSS

I

D

DP

I

DR

I

I

DRP

P

D

Tch

Tstg

Limits

30
±20
100
200 mA
100 mA
200

150(TOTAL)

150

−55 to +150

Electrical characteristics (Ta=25C)
Tr1

Parameter Symbol

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency

∗ Transition frequency of the device

BV
BV
BV

V

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

R

1

f

T

Min.

−50

−50

−5

−

−

−

100

3.29

−

Tr2

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage

Static drain-source
on-state resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Symbol

GSS

I

V

(BR)DSS

I

DSS
GS(th)

V

DS(on)

R

fs

|Y

C

iss

oss

C

rss

C

d(on)

t

t

r

t

d(off)

t

f

|

Unit

V
V
V

mA

∗1

mW

°C
°C

Unit

V
V

mA

∗1

∗1

mA

∗2

mW

°C
°C

Typ. Max. Unit Conditions

−

−

VI

−

−

V

−

−

V

−

−0.5

μA

−

−0.5

μA

−

−0.3

V

250

600

−

4.7

6.11 −

kΩ

250

−

MHz

Min. Typ. Max. Unit Conditions

−−

30

−−

−−

0.8

20

−

58Ω

−

713Ω

−

−−ms V

− 13 − pF

9

−

4

−

15

−

35

−

− 80 − ns

80

−

C

=

−50μA

I

C

=

−1mA

I

E

=

−50μA

V

CB

=

−50V

V

EB

=

−4V

C/IB

=

−5mA/ −0.25mA

I

C

=

−1mA, V

CE

=

I

VCE= −10V, IE=5mA, f=100MHz

±1 μA

1.0 μA

1.5

− pF

− pF

− ns

−

− ns

−5V

VGS=±20V, VDS=0V

V

D

=10μA, VGS=0V

I
VDS=30V, VGS=0V

DS

VV

=3V, ID=100μA
ID=10mA, VGS=4V
I

D

=1mA, VGS=2.5V

DS

=3V, ID=10mA

DS

=5V, VGS=0V, f=1MHz

V

I

D

=10mA, VDD 5V,

ns

GS

=5V, RL=500Ω,

V
R

GS

=10Ω

Data Sheet EMF32 / UMF32N

∗

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2010.09 - Rev.A

m

1k

current

m

COLLECTOR SATURATION VOLTAGE : V

(V)

5

s

4

s

)

0

channel temperature

5

)

)

0

15

e

voltage

Electrical characteristic curves

Tr1

V

CE

=−

C

(A)

Ta=25°C
Pulsed

5V

500

FE

200
100

50

20
10

DC CURRENT GAIN : h

−100μ−1m −10m−200μ−2m −20m−500μ−5m −50m −100

Ta=100°C

25°C

−40°C

5

2
1

COLLECTOR CURRENT : I

Fig.1

DC current gain vs. collector

Tr2

0.15

(A)

D

0.1

0.05

DRAIN CURRENT : I

4V

0

01234

DRAIN-SOURCE VOLTAGE : VDS (V)

3V

3.5V

2.5V

2V

VGS=1.5V

Data Sheet EMF32 / UMF32N

−1

−500m

CE(sat)

−200m

−100m

−50m

−20m

−10m

−5m

−2m

−1m

−100μ−1m

Ta=100°C

25°C

−40°C

−200μ−2m

−500μ−5m

COLLECTOR CURRENT : I

−10m

Fig.2 Collector-emitter saturation

voltage vs. collector current

200m

V

DS

=3V

100m

Pulsed

50m

(A)

D

20m
10m

5m
2m

1m

0.5m

DRAIN CURRENT : I

0.2m

0.1m
0

1

GATE-SOURCE VOLTAGE : VGS (V)

Ta=125°C

75°C
25°C

−25°C

2

−20m

C

3

lC/lB=20

−50m−100

(A)

2

(V

GS(th)

1.5

1

0.5

GATE THRESHOLD VOLTAGE : V

0

−50 0

−25 25 50 75 100 125 15

CHANNEL TEMPERATURE : Tch (°C)

V

DS

I

D

=0.1mA

Pulsed

=3V

Fig.3 Typical output characteristic

Fig.4 Typical transfer characteristic

Fig.5 Gate threshold voltage vs.

50

(Ω)

DS(on)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

Ta=125°C

20

10

0.5

5

2

1

0.001

75°C
25°C

−25°C

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.
DRAIN CURRENT : ID (A)

V

GS

Pulsed

=4V

Fig.6 Static drain-source on-state

resistance vs. drain current ( Ι

50

Ta=125°C

20

DS(on) (Ω)

10

5

2

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001

75°C
25°C

−25°C

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)

VGS=2.5V

Pulsed

Fig.7 Static drain-source on-state

resistance vs. drain current ( ΙΙ

STATIC DRAIN-SOURCE

(Ω)

DS(on)

10

5

ON-STATE RESISTANCE : R

0

0 5 10 15 2

GATE-SOURCE VOLTAGE : VGS (V)

ID=0.1A

ID=0.05A

Fig.8 Static drain-source on-stat

resistance vs. gate-source

Ta=25°C
Pulsed

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2010 ROHM Co., Ltd. All rights reserved.

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2010.09 - Rev.A

F

resistance vs. channel temperature

.

.5

.

.5

0

drain-source voltage

0

Data Sheet EMF32 / UMF32N

9

8

(Ω)

7

DS(on)

6
5
4
3
2
1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

ID=100mA

ID=50mA

−50 0 25 150

−25 50 75 100 125

CHANNEL TEMPERATURE : Tch (°C)

ig.9 Static drain-source on-state

200m
100m

50m
20m

10m

VGS=4V

5m
2m

1m

0.5m

REVERSE DRAIN CURRENT : IDR (A)

0.2m

0.1m

SOURCE-DRAIN VOLTAGE : VSD (V)

0V

10.50

VGS=4V
Pulsed

Ta=25°C
Pulsed

0.5

0.2
Ta=−25°C

0.1

0.05

0.02

0.01

0.005

FORWARD TRANSFER

ADMITTANCE : |Yfs| (S)

0.002

0.001

0.0001

25°C
75°C

125°C

0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
DRAIN CURRENT : ID (A)

V

DS

=3V

Pulsed

0.1 0.2 0.5

Fig.10 Forward transfer admittance vs

drain current

1

50

20

10

5

2

CAPACITANCE : C (pF)

1

0.5

0.1

0.2 0.5 1 2 5 10 20 5

DRAIN-SOURCE VOLTAGE : VDS (V)

Ta=25°C

f=1MH
VGS=0V

C

iss

C

oss

C

rss

Z

200m
100m

50m
20m

10m

5m
2m

1m

0.5m

REVERSE DRAIN CURRENT : IDR (A)

0.2m

0.1m

SOURCE-DRAIN VOLTAGE : VSD (V)

Ta=125°C

Fig.11 Reverse drain current vs

source-drain voltage ( Ι )

1000

500

200
100

50

20
10

SWITHING TIME : t (ns)

5

2

0.1

t

f

t

d(off)

t

r

t

d(on)

0.2 0.5 1 2 5 10 20 50
DRAIN CURRENT : ID (mA)

75°C
25°C

−25°C

10.50

VGS=0V

Pulsed

Ta=25°C

V

DD

=5V

V

GS

=5V

R

G

=10Ω

Pulsed

1

10

Fig.12 Reverse drain current vs.

source-drain voltage ( ΙΙ )

Fig.13 Typical capacitance vs.

Fig.14 Switching characteristics

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Notes

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consent of ROHM Co.,Ltd.

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The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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