ROHM EMD6, UMD6N, IMD6A Technical data
EMD6 / UMD6N / IMD6A
Transistors
General purpose
(dual digital transistors)
EMD6 / UMD6N / IMD6A
zFeatures
1) Both the DTA143T chip and DTC143T chip in an EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
A PNP and NPN digit al transistor
(each with a single built in resistor)
The following characteristics apply to both the DTr
2, however, the “ −” sign on DTr2 values for the PNP
DTr
1 and
type have been omitted.
zEquivalent circuit
EMD6 / UMD6N IMD6A
(3) (2) (1)
R
1
2
R
(4) (5) (6)
DTr
1
DTr
(4) (5) (6)
R
1
DTr
R
1
(3) (2) (1)
1
R1=4.7kΩR1=4.7kΩ
1
DTr
2
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
V
Collector current
Collector
power
dissipation
EMD6, UMD6N 150 (TOTAL)
IMD6A 300 (TOTAL)
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
Tstg −55∼+150 ˚C
CBO
CEO
EBO
I
P
Tj 150 ˚C
Limits
Unit
50 V
50
5
C
C
V
V
mA100
mW
1
∗
2
∗
zExternal dimensions (Units : mm)
EMD6
(3)
(4)
0.5
1.0
1.6
(2)(5)
0.22
0.13
0.5
(1)
(6)
1.2
1.6
0.5
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : D6
UMD6N
ROHM : UMT6
EIAJ : SC-88
0.2
0.15
0.1Min.
)
)
3
4
(
(
)
5
(
)
6
(
0.65
)
2
(
)
1
(
0.65
1.25
2.1
0.7
0to0.1
Each lead has same dimensions
1.3
2.0
0.9
Abbreviated symbol : D6
IMD6A
)
)
6
1
(
(
0.95
2.9
)
1.9
2
(
0.95
)
3
(
1.6
2.8
1.1
0.8
0to0.1
Each lead has same dimensions
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
0.3
)
5
(
)
4
(
0.15
Abbreviated symbol : D6
Rev.A 1/2
EMD6 / UMD6N / IMD6A
Transistors
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Transition frequency of the transistor
∗
BV
BV
BV
V
CEO
EBO
I
CBO
I
EBO
CE (sat)
h
FE
f
T
R
1
zPackaging specifications
Package
T2R
8000
Type
Code TR T108
Basic ordering
unit (pieces)
EMD6
UMD6N
IMD6A
zElectrical characteristic curves
1 (NPN)
DTr
1k
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : I
Fig.1 DC current gain vs. collector
current
DTr2 (PNP)
1k
500
FE
200
100
DC CURRENT GAIN : h
Ta=100˚C
50
20
10
5
2
1
−100µ−1m
−200µ−2m
−500µ−5m
COLLECTOR CURRENT : I
25˚C
−40˚C
−10m
Fig.3 DC current gain vs. collector
current
Rev.A 2/2
Typ. Max. Unit Conditions
Min.
−
50
−
50
−
5
−
−
−
−
−
−
100
250
− 250 −
3.29
4.7
−
−
−
0.5
0.5
0.3
600
6.11
VI
V
V
µA
µA
V
−
MHz
kΩ
C
=
50µA
C
=
1mA
I
I
E
=
50µA
V
CB
=
50V
EB
=
4V
V
C/IB
=
5mA/0.25mA
I
V
CE
=
5V, I
V
CE
=
10V, I
Taping
3000 3000
1
V)
500m
CE (sat) (
200m
100m
50m
20m
10m
5m
2m
1m
100µ200µ500µ1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
Fig.2 Collector-emitter saturation
voltage vs. collector current
−1
V)
(
−500m
CE (sat)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ−1m
−200µ−2m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.4 Collector-emitter saturation
voltage vs. collector current
C
−20m
C
VCE=
(A)
VCE=−5V
−50m−100m
(A)
5V
C
=
1mA
E
=
−5mA, f=100MHz
Ta=100˚C
25˚C
−40˚C
Ta=100˚C
25˚C
−40˚C
−500µ−5m
∗
−
lC/lB=20
C (A)
lC/lB=20
−10m
−20m
−50m−100m
C
(A)
Loading...