ROHM EMD6, UMD6N, IMD6A Technical data

EMD6 / UMD6N / IMD6A

Transistors

General purpose

(dual digital transistors)

EMD6 / UMD6N / IMD6A

zFeatures

1)Both the DTA143T chip and DTC143T chip in an EMT or UMT or SMT package.

2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.

3)Transistor elements are independent, eliminating interference.

4)Mounting cost and area can be cut in half.

zStructure

A PNP and NPN digital transistor (each with a single built in resistor)

The following characteristics apply to both the DTr1 and DTr2, however, the “ −” sign on DTr2 values for the PNP type have been omitted.

zEquivalent circuit

EMD6 / UMD6N			IMD6A
(3)	(2)	(1)	(4)	(5)	(6)
R1			R1
DTr2		DTr1	DTr2		DTr1
R1=4.7kΩ	R1		(3)	R1	R1=4.7kΩ
(4)	(5)	(6)		(2)	(1)

zAbsolute maximum ratings (Ta = 25°C)

Parameter			Symbol	Limits	Unit
Collector-base voltage			VCBO	50	V
Collector-emitter voltage			VCEO	50	V
Emitter-base voltage			VEBO	5	V
Collector current			IC	100	mA
Collector	EMD6, UMD6N		PC	150 (TOTAL)	mW	1
power						2
	IMD6A			300 (TOTAL)
dissipation
Junction temperature			Tj	150	˚C
Storage temperature			Tstg	−55+150	˚C

1 120mW per element must not be exceeded.2 200mW per element must not be exceeded.

zExternal dimensions (Units : mm)

EMD6

0.22	(5)	(2)	0.50.5	1.0	1.6
	(4)	(3)
	(6)	(1)

	1.2
0.13	1.6
	0.5

Each lead has same dimensions

ROHM : EMT6

Abbreviated symbol : D6

UMD6N	(4)				(3)		0.65
0.2						(2)		1.3	2.0
	(5)
	(6)			(1)			0.65
				1.25
				2.1
0.15				0to0.1			0.7	0.9
0.1Min.

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88

Abbreviated symbol : D6

IMD6A

0.3	(6)			(1)					0.950.95	1.9		2.9
	(5)			(2)
	(4)			(3)
			1.6
			2.8
0.15			0to0.1				0.8			1.1
0.3to0.6

Each lead has same dimensions

ROHM : SMT6

EIAJ : SC-74

Abbreviated symbol : D6

Rev.A 1/2

EMD6 / UMD6N / IMD6A

Transistors

zElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

BVCBO

50

−

−

V

IC=50µA

Collector-emitter breakdown voltage

BVCEO

50

−

−

V

IC=1mA

Emitter-base breakdown voltage

BVEBO

5

−

−

V

IE=50µA

Collector cutoff current

ICBO

−

−

0.5

µA

VCB=50V

Emitter cutoff current

IEBO

−

−

0.5

µA

VEB=4V

Collector-emitter saturation voltage

VCE (sat)

−

−

0.3

V

IC/IB=5mA/0.25mA

DC current transfer ratio

hFE

100

250

600

−

VCE=5V, IC=1mA

Transition frequency

fT

−

250

−

MHz

VCE=10V, IE=−5mA, f=100MHz

Input resistance

R1

3.29

4.7

6.11

kΩ

−

Transition frequency of the transistor

zPackaging specifications

Package

Taping

Code

T2R

TR

T108

Type

Basic ordering

8000

3000

3000

unit (pieces)

EMD6

UMD6N

IMD6A

zElectrical characteristic curves

DTr1 (NPN)

	1k				VCE=5V
	500
FE	200
: h
			Ta=100˚C
GAIN	100
				25˚C
	50		−40˚C
CURRENT
	20
	10
DC	5
	2
	1
	100 200	500 1m	2m	5m	10m 20m	50m100m

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain vs. collector current

(V)	1					lC/lB=20
VCE (sat)	500m
	200m		Ta=100˚C
:
VOLTAGE	100m			25˚C
			−40˚C
	50m
SATURATION	20m
	10m
	5m
COLLECTOR	2m
	1m	200 500 1m
	100		2m	5m	10m	20m 50m 100m
		COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage vs. collector current

DTr2 (PNP)

	1k		VCE=−5V
	500
hFE	200
:		Ta=100˚C
GAIN	100
		25˚C
	50	−40˚C
CURRENT
	20
	10
DC	5
	2
	1
	−100µ −200µ −500µ −1m −2m		−5m −10m −20m −50m−100m

COLLECTOR CURRENT : IC (A)

Fig.3 DC current gain vs. collector current

(V)	−1			lC/lB=20
(sat)	−500m	Ta=100˚C
: VCE			25˚C
	−200m		−40˚C
VOLTAGE	−100m
	−50m
SATURATION	−20m
	−10m
	−5m
COLLECTOR	−2m
	−1m
	−100µ −200µ −500µ −1m		−2m	−5m −10m −20m −50m−100m
		COLLECTOR CURRENT : IC (A)

Fig.4 Collector-emitter saturation voltage vs. collector current

Rev.A 2/2