ROHM EMD4 Technical data
Transistors
General purpose
(dual digital transistors)
EMD4 / UMD4N
zFeatures
1) Both the DTA1 14Y chip and DTC144E chip in
an EMT6 or UMT6 package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
A PNP and NPN digit al transistor
(each with a single built in resistor)
The following characteristics apply to both the DTr
2, however, the “ −” sign on DTr2 values for the PNP
DTr
1 and
type have been omitted.
zEquivalent circuit
EMD4 / UMD4N
(3) (2) (1)
R
1
R
2
DTr
1
2
R
1
DTr
1
R1/R2=47kΩ / 47kΩ
DTr
2
R1/R2=10kΩ / 47kΩ
DTr
2
R
(4) (5) (6)
zPackaging specifications
Package
Taping
zExternal dimensions (Unit : mm)
EMD4
0.22
0.13
ROHM : EMT6
Abbreviated symbol : D4
UMD4N
)
5
(
0.2
0.15
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol :D4
EMD4 / UMD4N
(3)
(4)
(6)
)
4
(
)
6
(
0.5
1.0
1.6
(2)(5)
0.5
(1)
1.2
1.6
0.5
Each lead has same dimensions
)
3
0.65
(
)
2
(
1.3
)
1
(
1.25
2.1
0∼0.1
0.65
0.9
0.7
Each lead has same dimensions
2.0
Type
Code
Basic ordering
unit (pieces)
T2R
8000
TR
3000
EMD4
UMD4N
Rev.B 1/4
EMD4 / UMD4N
Transistors
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
I
C(Max.)
Tstg
V
Pd
DTr1(DTC144E) DTr2(DTA114Y)
CC
IN
I
O
50
−10 to +40
30
100
Tj
Limits
−50
−40 to +6
−70
−100
120(1ELEMENT)150(TOTAL)
150
−55 to +150
zElectrical characteristics (Ta = 25°C)
DTr 1
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Transition frequency of the device
V
V
V
O(on)
I
O(off)
G
R
R2/R
I(off)
I(on)
I
f
I
I
1
1
T
Typ. Max. Unit Conditions
Min.
−
3
−
−
−
68
32.9
0.8
−
0.1
47
250
0.5
−
−
−
0.3
0.18
−
0.5
−
−
−
61.1
1.2
1
−
V
CC
V
O
=0.3V, IO=2mA
V
V
I
O/II
mA
V
I
=5V
µA
V
CC
−
VO=5V, IO=5mA
kΩ
−−
CE
V
MHz
=5V, IO=100µA
=10mA/0.5mA
=50V, VI=0V
=10V, IE=−5mA, f=100MHz
DTr 2
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Transition frequency of the device
V
V
V
O(on)
I
O(off)
G
R
R2/R
I(off)
I(on)
I
f
I
I
1
1
T
Typ. Max. Unit Conditions
Min.
−
−1.4
−
−
−
68
7
3.7
−
−
−
−0.1
−
−
−
10
4.7
250
−0.3
−
−0.3
−0.88
−0.5
−
13
5.7
−
V
CC
V
V
O
= −0.3V, IO= −1mA
I
O/II
V
V
mA
I
= −5V
µA
V
CC
−
V
O
= −5V, IO= −5mA
kΩ
−−
CE
V
MHz
= −5V, IO= −100µA
= −5mA / −0.25mA
= −50V, VI=0V
= −10V, IE=5mA, f=100MHz
Rev.B 2/4
Unit
V
V
mA
mW
°C
°C
−
∗
−
∗
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