ROHM EMD28 Schematic [ru]
Transistors
z
z
z
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General purpose transistor
(isolated transistors)
EMD28
EMD28
DTB543X
Applications
and DTC144E A are housed independently in a EMT6 package.
DC / DC converter
Motor driver
Features
1) DTr
1
: PNP digital transistor
2
: NPN digital transistor
DTr
2) Mounting possible with EMT3 automatic mounting
machines.
Structure
PNP / NPN Silicon epitaxial planar digital transistor
The following characteristics apply to both DTr1 and
DTr2.
z
Equivalent circuit
EMD28
(4)(5)(6)
External dimensions (Unit : mm)
EMT6
1.6
1.0
0.5
0.5
(5)
(6)
(4)
1.2
(2)
(1)
1pin mark
Abbreviated symbol : D28
ROHM : EMT6
(3)
0.22
Each lead has same dimensions
0.5
1.6
0.13
DTr1
DTr1: R1/R2=4.7kΩ/10kΩ
DTr
2
: R1/R2=47kΩ/47kΩ
Packaging specifications
z
Type EMD28
Package
Marking
Code
Basic ordering unit (pieces)
R2
R1
R2
DTr2
R1
(3)(2)(1)
!
EMT6
D28
T2R
8000
1/5
Transistors
z
Absolute maximum ratings (Ta=25qC)
DTr1
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
∗
Each terminal mounted on a recommended.
DTr2
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
∗ Each terminal mounted on a recommended.
CC
V
IN
C (MAX.)
P
d
Tj 150 °C
Tstg −55 to +150 °C
CC
V
IN
O
I
I
C (MAX.)
d
P
Tj 150 °C
Tstg −55 to +150 °C
DTr1
−12 V
−12 to +7
−500
120
DTr2
50 V
−10 to +40
30
100
120
Unit
VV
mAI
mW
Unit
VV
mA
mW
EMD28
∗
∗
DTr1/Tr2
Parameter Symbol
Power dissipation
Storage temperature
Each terminal mounted on a recommended.
∗
Limits
P
d
150(TOTAL) mW ∗
Tstg
−55 to +125
Unit
°C
2/5
Transistors
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Electrical characteristics (T a=25qC)
DTr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency ∗
Input resistance
Resistance ratio
∗
Characteristics of built-in transistor.
DTr2
Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency ∗
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
Vl
(off)
(on)
VI
Vo
(on)
I
I
O(off)
I
G
I
T
f
R
1
R
2/R1
(off) −
Vl
VI
(on) 3
(on) −
Vo
I −
I
I
O(off)
G
I
T
f
R
1 32.9 47 61.1
2/R1
R
−
−2.5
−
−
−−0.3
−−
−70 −300
−−1.8
−−
140 −
−
260
3.29 4.7 6.11
2.1
1.7
− 0.5
−−
100 300
− 0.18
−−
68 −
−
250
0.8
1
−0.5
−
− MHz
2.6
0.5
−
− MHz
1.2
EMD28
V
CC
V
V
mV
mA
μA
−
kΩ
−−
V
V
mV
mA
μA
−
kΩ
−−
= −5V / Io= −100uA
V
O
= −0.3V / Io= −20mA
I
O
= −100mA, II= −5mA
V
I
= −5V
VCC= −12V / VI=0V
VO= −2V / Io= −100mA
VCE= −10V / IE=5mA, f=100MHz
−
CC=5V / Io=100uA
V
O=0.3V / Io=2mA
V
I
O=10mA, II=0.5mA
V
I=5V
VCC=50V / VI=0V
VO=5V / Io=5mA
VCE=10V / IE= −5mA, f=100MHz
−
3/5
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